Hedgehog regulated Slit expression determines commissure and glial cell position in the zebrafish forebrain

Three major axon pathways cross the midline of the vertebrate forebrain early in embryonic development: the postoptic commissure (POC), the anterior commissure (AC) and the optic nerve. We show that a small population of Gfap+ astroglia spans the midline of the zebrafish forebrain in the position of, and prior to, commissural and retinal axon crossing. These glial `bridges\u27 form in regions devoid of the guidance molecules slit2 and slit3, although a subset of these glial cells express slit1a. We show that Hh signaling is required for commissure formation, glial bridge formation, and the restricted expression of the guidance molecules slit1a, slit2, slit3 and sema3d, but that Hh does not appear to play a direct role in commissural and retinal axon guidance. Reducing Slit2 and/or Slit3 function expanded the glial bridges and caused defasciculation of the POC, consistent with a `channeling\u27 role for these repellent molecules. By contrast, reducing Slit1a function led to reduced midline axon crossing, suggesting a distinct role for Slit1a in midline axon guidance. Blocking Slit2 and Slit3, but not Slit1a, function in the Hh pathway mutant yot (gli2DR) dramatically rescued POC axon crossing and glial bridge formation at the midline, indicating that expanded Slit2 and Slit3 repellent function is largely responsible for the lack of midline crossing in these mutants. This analysis shows that Hh signaling helps to pattern the expression of Slit guidance molecules that then help to regulate glial cell position and axon guidance across the midline of the forebrain

Advertising Brochure: The Great Minneapolis Line

In this chapter several aspects of the electronic and phonon structure are considered for the design and engineering of advanced thermoelectric materials. For a given compound, its thermoelectric figure of merit, zT, is fully exploited only when the free carrier density is optimized. Achieving higher zT beyond this requires the improvement in the material quality factor B. Using experimental data on lead chalcogenides as well as examples of other good thermoelectric materials, we demonstrate how the fundamental material parameters: effective mass, band anisotropy, deformation potential, and band degeneracy, among others, impact the thermoelectric properties and lead to desirable thermoelectric materials. As the quality factor B is introduced under the assumption of acoustic phonon (deformation potential) scattering, a brief discussion about carrier scattering mechanisms is also included. This simple model with the use of an effective deformation potential coefficient fits the experimental properties of real materials with complex structures and multi-valley Fermi surfaces remarkably well—which is fortunate as these are features likely found in advanced thermoelectric materials