An epidemiological study of epilepsy in Hong Kong SAR, China

SummaryBackgroundSeveral specialist clinic-based epidemiology studies suggested low prevalence in Hong Kong Special Administrative Region (HKSAR) of China. Population-based epidemiological data for epilepsy is not available. We performed the first population-based epidemiological survey of epilepsy in this locality.MethodWe conducted a territory-wide survey. We randomly selected 9547 households from fixed-line telephone directory. We successfully surveyed 17,783 persons of 5178 households by telephone interview. All positive respondents 685 (3.85%) were invited for clinical validation. 127 subjects were validated by board-certified neurologists.ResultsSeizure disorders were confirmed in 28 subjects. The crude prevalence of active epilepsy and seizure disorder were estimated to be 3.94/1000 (95% confidence interval (CI): 2.10–6.74/1000) and 8.49/1000 (95% CI: 5.64–12.27/1000), respectively.ConclusionsThe prevalence of epilepsy in HKSAR is more common than previously thought. The data retrieved is useful for planning and allocation of health resources for patients with seizure disorders

Interpretation of long-range interatomic force

Recent direct mechanical measurements of atomic force microscopy showed that the force between the silicon tip and the silicon sample is long range in the attractive region and its magnitude at maximum is relatively smaller. These features disagree with previous theoretical predictions based on the ab initio calculations. We investigated the nature of forces between a silicon tip and the silicon (111)-(2×1) surface by performing first-principles pseudopotential and classical molecular dynamics calculations and by calculating the van der Waals interaction. The first two methods give forces that are short range in nature. Fair agreement between the experiment and theory is obtained when the van der Waals interaction is included. The effect of the tip induced deformation is analyzed. © 1999 The American Physical Society

Surfactant-mediated growth of semiconductor materials

During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organometallic vapour deposition, the addition of a surfactant can enhance two-dimensional layer-by-layer growth. This modified growth process is now called the surfactant-mediated growth (SMG) method. It has had an important impact on the development of technologically important materials in device applications, such as heterostructures used for laser applications. Recent developments that use surfactants to improve doping profiles in semiconducting systems and antisurfactants (ASMG) to grow quantum dots further ensure that SMG/ASMG will play a major role in the future development of optoelectronic materials and nanoparticles. In this paper, we review important earlier experimental work involving the SMG method as well as some recent developments. Theoretical work involving first-principles methods and kinetic Monte Carlo simulations are discussed but confined only to the surfactant effect

An atomistic study on the stretching of nanowires

In this work we present an atomic-scale investigation of elastic and plastic deformation, and force variations in metal nanowires that are pulled from their ends. The atomic simulations are performed by using a molecular dynamics method with an empirical two-body potential; the effect of the initial size, shape, temperature and rate of stretching on the necking and fracture are investigated. We find that the necking occurs mainly due to the formation of a new layer with a smaller cross-section after every structural yield, and concurrently the tensile force falls abruptly. The relationship between the atomic structure and the conductance of the wire is analysed by constructing a realistic potential for the neck in terms of a linear combination of atomic pseudopotentials and by calculating the conductance using the transfer matrix method. Our results show that the variation of the conductance is strongly correlated with the sudden structural changes in the neck, and reflects the quantization of electronic states in the neck, but not the quantization of the conductance

Electronic and magnetic properties of zinc blende half-metal superlattices

Zinc blende half-metallic compounds such as CrAs, with large magnetic moments and high Curie temperatures, are promising materials for spintronic applications. We explore layered materials, consisting of alternating layers of zinc blende half-metals, by first principles calculations, and find that superlattices of (CrAs)1(MnAs)1 and (CrAs)2(MnAs)2 are half-metallic with magnetic moments of 7.0mB and 14.0mB per unit cell, respectively. We discuss the nature of the bonding and half-metallicity in these materials and, based on the understanding acquired, develop a simple expression for the magnetic moment in such materials. We explore the range of lattice constants over which half-metallicity is manifested, and suggest corresponding substrates for growth in thin film form

Six low-strain zinc-blende half metals: An ab initio investigation

A class of spintronic materials, the zinc-blende (ZB) half metals, has recently been synthesized in thin-film form. We apply all-electron and pseudopotential ab initio methods to investigate the electronic and structural properties of ZB Mn and Cr pnictides and carbides, and find six compounds to be half metallic at or near their respective equilibrium lattice constants, making them excellent candidates for growth at low strain. Based on these findings, we further propose substrates on which the growth may be accomplished with minimum strain. Our findings are supported by the recent successful synthesis of ZB CrAs on GaAs and ZB CrSb on GaSb, where our predicted equilibrium lattice constants are within 0.5% of the lattice constants of the substrates on which the growth was accomplished. We confirm previous theoretical results for ZB MnAs, but find ZB MnSb to be half metallic at its equilibrium lattice constant, whereas previous work has found it to be only nearly so. We report here two low-strain half metallic ZB compounds, CrP and MnC, and suggest appropriate substrates for each. Unlike the other five compounds, we predict ZB MnC to become/remain half metallic with compression rather than expansion, and to exhibit metallicity in the minority-rather than majority-spin channel. These fundamentally different properties of MnC can be connected to substantially greater p-d hybridization and d-d overlap, and correspondingly larger bonding-antibonding splitting and smaller exchange splitting. We examine the relative stability of each of the six ZB compounds against NiAs and MnP structures, and find stabilities for the compounds not yet grown comparable to those already grown

Spin-polarized ballistic transport in a thin superlattice of zinc blende half-metallic compounds

We examine theoretically ballistic conduction in thin layers of zinc blende half metals, considering as an example a superlattice consisting of monolayers of GaAs and MnAs, a bilayer of CrAs, and a bilayer of GaAs. By artificially separating bilayers, we show that surface states thwart half metallicity. However, capping the metal-As bilayers restores half metallicity, and ballistic conduction of electrons within ∼0.3 eV of the Fermi level will give nearly 100% spin-polarized transmission in the direction of the superlattice. Recent developments suggest atomic layer epitaxy can be used to produce such thin layers for spintronic applications. ©2005 The American Physical Society

Circulating Levels of Adipocyte and Epidermal Fatty Acid–Binding Proteins in Relation to Nephropathy Staging and Macrovascular Complications in Type 2 Diabetic Patients

OBJECTIVE—To investigate the relationships of serum adipocyte fatty acid–binding protein (A-FABP) and epidermal fatty acid–binding protein (E-FABP) with renal dysfunction and macrovascular complications in type 2 diabetic patients

Electronic structure and magnetism of Mn doped GaN

Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high Curie temperature compared to that of Mn doped GaAs systems. To understand the electronic and magnetic properties, we have studied Mn doped GaN system in detail by a first principles plane wave method. We show here the effect of varying Mn concentration on the electronic and magnetic properties. For dilute Mn concentration, $d$ states of Mn form an impurity band completely separated from the valence band states of the host GaN. This is in contrast to the Mn doped GaAs system where Mn $d$ states in the gap lie very close to the valence band edge and hybridizes strongly with the delocalized valence band states. To study the effects of electron correlation, LSDA+U calculations have been performed. Calculated exchange interaction in (Mn,Ga)N is short ranged in contrary to that in (Mn,Ga)As where the strength of the ferromagnetic coupling between Mn spins is not decreased substantially for large Mn-Mn separation. Also, the exchange interactions are anisotropic in different crystallographic directions due to the presence or absence of connectivity between Mn atoms through As bonds.Comment: 6 figures, submitted to Phys. Rev.