84 research outputs found

    Ultrahigh field electron cyclotron resonance absorption in In1x_{1-x}Mnx_xAs films

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    We have carried out an ultrahigh field cyclotron resonance study of nn-type In1x_{1-x}Mnx_xAs films, with Mn composition xx ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing xx. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, α\alpha and β\beta, for this important III-V dilute magnetic semiconductor system.Comment: 4 pages, 4 figure

    Electron and hole states in quantum-dot quantum wells within a spherical 8-band model

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    In order to study heterostructures composed both of materials with strongly different parameters and of materials with narrow band gaps, we have developed an approach, which combines the spherical 8-band effective-mass Hamiltonian and the Burt's envelope function representation. Using this method, electron and hole states are calculated in CdS/HgS/CdS/H_2O and CdTe/HgTe/CdTe/H_2O quantum-dot quantum-well heterostructures. Radial components of the wave functions of the lowest S and P electron and hole states in typical quantum-dot quantum wells (QDQWs) are presented as a function of radius. The 6-band-hole components of the radial wave functions of an electron in the 8-band model have amplitudes comparable with the amplitude of the corresponding 2-band-electron component. This is a consequence of the coupling between the conduction and valence bands, which gives a strong nonparabolicity of the conduction band. At the same time, the 2-band-electron component of the radial wave functions of a hole in the 8-band model is small compared with the amplitudes of the corresponding 6-band-hole components. It is shown that in the CdS/HgS/CdS/H_2O QDQW holes in the lowest states are strongly localized in the well region (HgS). On the contrary, electrons in this QDQW and both electron and holes in the CdTe/HgTe/CdTe/H_2O QDQW are distributed through the entire dot. The importance of the developed theory for QDQWs is proven by the fact that in contrast to our rigorous 8-band model, there appear spurious states within the commonly used symmetrized 8-band model.Comment: 15 pages, 5 figures, E-mail addresses: [email protected], [email protected]

    General boundary conditions for the envelope function in multiband k.p model

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    We have derived general boundary conditions (BC) for the multiband envelope functions (which do not contain spurious solutions) in semiconductor heterostructures with abrupt heterointerfaces. These BC require the conservation of the probability flux density normal to the interface and guarantee that the multiband Hamiltonian be self--adjoint. The BC are energy independent and are characteristic properties of the interface. Calculations have been performed of the effect of the general BC on the electron energy levels in a potential well with infinite potential barriers using a coupled two band model. The connection with other approaches to determining BC for the envelope function and to the spurious solution problem in the multiband k.p model are discussed.Comment: 15 pages, 2 figures; to be published in Phys. Rev. B 65, March 15 issue 200

    Effect of the Surface on the Electron Quantum Size Levels and Electron g-Factor in Spherical Semiconductor Nanocrystals

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    The structure of the electron quantum size levels in spherical nanocrystals is studied in the framework of an eight--band effective mass model at zero and weak magnetic fields. The effect of the nanocrystal surface is modeled through the boundary condition imposed on the envelope wave function at the surface. We show that the spin--orbit splitting of the valence band leads to the surface--induced spin--orbit splitting of the excited conduction band states and to the additional surface--induced magnetic moment for electrons in bare nanocrystals. This additional magnetic moment manifests itself in a nonzero surface contribution to the linear Zeeman splitting of all quantum size energy levels including the ground 1S electron state. The fitting of the size dependence of the ground state electron g factor in CdSe nanocrystals has allowed us to determine the appropriate surface parameter of the boundary conditions. The structure of the excited electron states is considered in the limits of weak and strong magnetic fields.Comment: 11 pages, 4 figures, submitted to Phys. Rev.

    Development of an eight-band theory for quantum-dot heterostructures

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    We derive a nonsymmetrized 8-band effective-mass Hamiltonian for quantum-dot heterostructures (QDHs) in Burt's envelope-function representation. The 8x8 radial Hamiltonian and the boundary conditions for the Schroedinger equation are obtained for spherical QDHs. Boundary conditions for symmetrized and nonsymmetrized radial Hamiltonians are compared with each other and with connection rules that are commonly used to match the wave functions found from the bulk kp Hamiltonians of two adjacent materials. Electron and hole energy spectra in three spherical QDHs: HgS/CdS, InAs/GaAs, and GaAs/AlAs are calculated as a function of the quantum dot radius within the approximate symmetrized and exact nonsymmetrized 8x8 models. The parameters of dissymmetry are shown to influence the energy levels and the wave functions of an electron and a hole and, consequently, the energies of both intraband and interband transitions.Comment: 36 pages, 10 figures, E-mail addresses: [email protected], [email protected]

    Weak probe readout of coherent impurity orbital superpositions in silicon

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    Contains fulltext : 166167.pdf (publisher's version ) (Open Access
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