An Indication of Anisotropy in Arrival Directions of Ultra-high-energy Cosmic Rays through Comparison to the Flux Pattern of Extragalactic Gamma-Ray Sources

A new analysis of the data set from the Pierre Auger Observatory provides evidence for anisotropy in the arrival directions of ultra-high-energy cosmic rays on an intermediate angular scale, which is indicative of excess arrivals from strong, nearby sources. The data consist of 5514 events above 20 EeV with zenith angles up to 80 degrees. recorded before 2017 April 30. Sky models have been created for two distinct populations of extragalactic gamma-ray emitters: active galactic nuclei from the second catalog of hard Fermi-LAT sources (2FHL) and starburst galaxies from a sample that was examined with Fermi-LAT. Flux-limited samples, which include all types of galaxies from the Swift-BAT and 2MASS surveys, have been investigated for comparison. The sky model of cosmic-ray density constructed using each catalog has two free parameters, the fraction of events correlating with astrophysical objects, and an angular scale characterizing the clustering of cosmic rays around extragalactic sources. A maximum-likelihood ratio test is used to evaluate the best values of these parameters and to quantify the strength of each model by contrast with isotropy. It is found that the starburst model fits the data better than the hypothesis of isotropy with a statistical significance of 4.0 sigma, the highest value of the test statistic being for energies above 39 EeV. The three alternative models are favored against isotropy with 2.7 sigma-3.2 sigma significance. The origin of the indicated deviation from isotropy is examined and prospects for more sensitive future studies are discussed

Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)

N-Trimethylborazine has been used as precursor to deposit BN, BCN:H and metal-containing BCN:H films by means of plasma CVD processes. Depending on the plasma process and the gas mixture, films with various element compositions and mechanical properties were obtained. 
Carbon-free BN coatings formed at substrate temperatures of about 600°C in an ECR plasma CVD process, if ammonia was fed through the resonance zone. With Ar, on the other hand, colourless hard BCN:H coatings were obtained at comparably low temperatures of 100 to 150°C. 
Brownish BCN:H plasma polymer films were deposited from rf glow discharges using N-trimethylborazine/Ar mixtures. The formation of metal-containing BCN:H films with refractory metal carbide or nitride clusters in a BCN-network was achieved by a combination of rf sputtering from Ti or Nb targets and plasma CVD from the precursor/Ar mixture.
Results of EPMA, IR, nanometer indentation, XPS and X-ray diffraction measurements are reported

Diamant als Elektronikmaterial Abschlussbericht

Heteroepitaxial diamond thin films on different oriented silicon substrates with improved thermal and electrical properties were prepared by chemical vapour deposition (CVD) and were characterized by scanning tunneling and atomic force microscopy. Diamond/#beta#-SiC composite films prepared by microwave plasma assisted chemical vapour deposition (MWCVD) exhibits an increased diamond-substrate adhesion. Dielectric strength and insulation power of polycrystalline diamond films were improved by an increased phase purity as well as by nitrogen incorporation. Results of the diamond film deposition, of selective diamond nucleation and epitaxy together with results of in situ doping with boron represent the basis for new diamond construction elements. (WEN)SIGLEAvailable from TIB Hannover: F95B2338+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Entwicklung von Schichtsystemen fuer hochohmige Praezisionswiderstaende Abschlussbericht

The reactive spulter process for preparation of high ohmic film resistors has been studied with different reactive gases (CH_4, C_2H_2, O_2, CO_2, N_2O, TMS, HMDS, HMDSO, HMDSN) and different target materials (Mn, Cr, Cu, Ag, Pd, Pt, TiC, CrSi). It has been found that high ohmic CrSi films can be obtained with largely improved reproducibility and resistance by applying oxygen containing reactive gas instead of molecular O_2. This finding is especially relevant for the preparation of flat chip resistors. The lowest scattering was obtained with CO_2. However, the incorporation of carbon into the film material as the consequence of CO_2 application leads to a modification of TCR zero crossing. In addition it is shown that under optimized sputtering conditions plasma polymer films can be generated which act as efficient water diffusion barrier. Such layers are expected to improve the moisture-heat-stability of resistors. (WEN)SIGLEAvailable from TIB Hannover: F96B1668+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Erforschung neuer homogener atmosphaerischer Plasmen und ausgewaehlter Anwendungen. Teilvorhaben: Grundlegende Untersuchungen zum Einsatz homogener Barriereentladungen fuer Haft-, Antihaft- und Barrierebehandlungen

Available from TIB Hannover: F03B946 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Entwicklung halbleitender Diamantschichten und deren Qualifikation als Material fuer aktive elektronische Bauelemente Abschlussbericht

Available from TIB Hannover: F98B1155+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung, Wissenschaft, Forschung und Technologie, Bonn (Germany)DEGerman

Diamantbeschichtung komplexer Geometrien Hochskalierung des Heissdraht-CVD-Prozesses zur Diamantabscheidung Abschlussbericht

Diamond films on hard metal-, Al_2O_3-, Si_3N_4- and Si substrates have been deposited at 10-40 mbar from different gas atmospheres using micro wave plasma (mwp) chemical vapour deposition (cvd). The influence of substrate pretreatment, deposition temperature and micro wave plasma on the adhesive strength has been studied by the Rockwell test, and coating adhesion was compared with materials obtained by the filament hf-cvd process. It is demonstrated that hf-cvd is much more suited for diamond coating of complex substrates than the mwp-cvd process. Tantalum and rhenium as filament materials in hf-cvd are sufficient stable under oxygen-free atmosphere, and rhenium is stable even in the presence of oxygen. For hf-cvd process optimization the influence of filament geometry filament-substrate distance and gas convection on diamond deposition has been studied. (WEN)SIGLEAvailable from TIB Hannover: F95B1376+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman

Neuartige Schichtsysteme fuer die Oberflaechenveredelung von Stahlband. Teilvorhaben: Grundlagenuntersuchungen zur Corona-Reinigung und Plasmapolymerisation Abschlussbericht

SIGLEAvailable from TIB Hannover: F03B964 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung, Berlin (Germany)DEGerman

Umweltvertraegliche Verfahren zur haftfesten Metallisierung von Kunststoffen und deren Einsatz in elektronisch/mechanischen Funktionselementen. Teilprojekt: Plasmaunterstuetzte Vorbehandlung und Metallisierung von Kunststoffen Abschlussbericht

SIGLEAvailable from TIB Hannover: F99B1100+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman