Diamantbeschichtung komplexer Geometrien Hochskalierung des Heissdraht-CVD-Prozesses zur Diamantabscheidung Abschlussbericht

Abstract

Diamond films on hard metal-, Al_2O_3-, Si_3N_4- and Si substrates have been deposited at 10-40 mbar from different gas atmospheres using micro wave plasma (mwp) chemical vapour deposition (cvd). The influence of substrate pretreatment, deposition temperature and micro wave plasma on the adhesive strength has been studied by the Rockwell test, and coating adhesion was compared with materials obtained by the filament hf-cvd process. It is demonstrated that hf-cvd is much more suited for diamond coating of complex substrates than the mwp-cvd process. Tantalum and rhenium as filament materials in hf-cvd are sufficient stable under oxygen-free atmosphere, and rhenium is stable even in the presence of oxygen. For hf-cvd process optimization the influence of filament geometry filament-substrate distance and gas convection on diamond deposition has been studied. (WEN)SIGLEAvailable from TIB Hannover: F95B1376+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Forschung und Technologie (BMFT), Bonn (Germany)DEGerman