A possible mechanism for superconductivity in doped SrTiO3

The soft ferro-electric phonon in SrTiO3 observed with optical spectroscopy has an extraordinary strong spectral weight which is much stronger than expected in the limit of a perfectly ionic compound. The "charged phonon" in SrTiO3 is caused by the close-to-covalent character of the Ti-O ionic bond and implies a strong coupling between the soft ferro-electric phonon and the inter band transitions across the 3 eV gap of SrTiO3. We demonstrate that this coupling leads, in addition to the charged phonon effect, to a pairing interaction involving the exchange of two transverse optical phonons. This process owes its relevance to the strong electron-phonon coupling and to the fact that the interaction mediated by a single transverse optical phonon vanishes at low electron density. We use the experimental soft phonon spectral weight to calculate the strength of the bi-phonon mediated pairing interaction in the electron doped material and show that it is of the correct magnitude when compared to the experimental value of the superconducting critical temperature.Comment: Missing factors corrected in Eqs. 6 and

BaCu3O4: High Temperature Magnetic Order in One-Dimensional S=1/2 Diamond-Chains

The magnetic properties of the alkaline earth oxocuprate BaCu3O4 are investigated. We show that the characteristic Cu3O4 layers of this material can be described with diamond chains of antiferromagnetically coupled Cu 1/2 spins with only a weak coupling between two adjacent chains. These Cu3O4 layers seem to represent a so far unique system of weakly coupled one-dimensional magnetic objects where the local AF ordering of the Cu2+ ions leads to an actual net magnetic moment of an isolated diamond chain. We demonstrate a magnetic transition at a high N\'eel temperature T_{N}=336 K

Mott transition and collective charge pinning in electron doped Sr2IrO4

We studied the in-plane dynamic and static charge conductivity of electron doped Sr2IrO4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott-gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott-gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or Drude peak) we observe a soft collective mode (SCM) with a broad maximum at 40 meV. Doping to 10% increases the strength of the SCM, and a zero-energy mode occurs together with metallic DC conductivity. Further increase of the La substitution doesn't change the spectral weight integral up to 3 eV. It does however result in a transfer of the SCM spectral weight to the zero-energy mode, with a corresponding reduction of the DC resistivity for all temperatures from 4 to 300 K. The presence of a zero-energy mode signals that at least part of the Fermi surface remains ungapped at low temperatures, whereas the SCM appears to be caused by pinning a collective frozen state involving part of the doped electrons

Mott transition and collective charge pinning in electron doped Sr_2IrO_4

We studied the in-plane dynamic and static charge conductivity of electron doped Sr_2IrO_4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or Drude peak) we observe a soft collective mode (SCM) with a broad maximum at 40 meV. Doping to 10% increases the strength of the SCM, and a zero-energy mode occurs together with metallic DC conductivity. Further increase of the La substitution doesn't change the spectral weight integral up to 3 eV. It does however result in a transfer of the SCM spectral weight to the zero-energy mode, with a corresponding reduction of the DC resistivity for all temperatures from 4 to 300 K. The presence of a zero-energy mode signals that at least part of the Fermi surface remains ungapped at low temperatures, whereas the SCM appears to be caused by pinning a collective frozen state involving part of the doped electrons

Mott transition and collective charge pinning in electron doped Sr_2IrO_4

We studied the in-plane dynamic and static charge conductivity of electron doped Sr_2IrO_4 using optical spectroscopy and DC transport measurements. The optical conductivity indicates that the pristine material is an indirect semiconductor with a direct Mott gap of 0.55 eV. Upon substitution of 2% La per formula unit the Mott gap is suppressed except in a small fraction of the material (15%) where the gap survives, and overall the material remains insulating. Instead of a zero energy mode (or Drude peak) we observe a soft collective mode (SCM) with a broad maximum at 40 meV. Doping to 10% increases the strength of the SCM, and a zero-energy mode occurs together with metallic DC conductivity. Further increase of the La substitution doesn't change the spectral weight integral up to 3 eV. It does however result in a transfer of the SCM spectral weight to the zero-energy mode, with a corresponding reduction of the DC resistivity for all temperatures from 4 to 300 K. The presence of a zero-energy mode signals that at least part of the Fermi surface remains ungapped at low temperatures, whereas the SCM appears to be caused by pinning a collective frozen state involving part of the doped electrons

Charge puddles in a completely compensated topological insulator

International audienceCompensation of intrinsic charges is widely used to reduce the bulk conductivity of 3D topological insulators (TIs). Here we use low temperature electron irradiation-induced defects paired with in situ electrical transport measurements to fine-tune the degree of compensation in Bi2Te3. The coexistence of electrons and holes at the point of optimal compensation can only be explained by bulk carriers forming charge puddles. These need to be considered to understand the electric transport in compensated TI samples, irrespective of the method of compensation

Thermodynamic signatures of the field-induced states of graphite

Previous transport studies of graphite in strong magnetic fields have found a sequence of phase transitions with a still unresolved microscopic origin. Here the authors present ultrasound measurements enabling sharper resolution and demonstrating the thermodynamic nature of these transitions