31,567 research outputs found

    Detection of low energy single ion impacts in micron scale transistors at room temperature

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    We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects

    Numerical studies of identification in nonlinear distributed parameter systems

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    An abstract approximation framework and convergence theory for the identification of first and second order nonlinear distributed parameter systems developed previously by the authors and reported on in detail elsewhere are summarized and discussed. The theory is based upon results for systems whose dynamics can be described by monotone operators in Hilbert space and an abstract approximation theorem for the resulting nonlinear evolution system. The application of the theory together with numerical evidence demonstrating the feasibility of the general approach are discussed in the context of the identification of a first order quasi-linear parabolic model for one dimensional heat conduction/mass transport and the identification of a nonlinear dissipation mechanism (i.e., damping) in a second order one dimensional wave equation. Computational and implementational considerations, in particular, with regard to supercomputing, are addressed

    Numerical methods for analyzing electromagnetic scattering

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    Numerical methods to analyze electromagnetic scattering are presented. The dispersions and attenuations of the normal modes in a circular waveguide coated with lossy material were completely analyzed. The radar cross section (RCS) from a circular waveguide coated with lossy material was calculated. The following is observed: (1) the interior irradiation contributes to the RCS much more than does the rim diffraction; (2) at low frequency, the RCS from the circular waveguide terminated by a perfect electric conductor (PEC) can be reduced more than 13 dB down with a coating thickness less than 1% of the radius using the best lossy material available in a 6 radius-long cylinder; (3) at high frequency, a modal separation between the highly attenuated and the lowly attenuated modes is evident if the coating material is too lossy, however, a large RCS reduction can be achieved for a small incident angle with a thin layer of coating. It is found that the waveguide coated with a lossy magnetic material can be used as a substitute for a corrugated waveguide to produce a circularly polarized radiation yield

    Numerical methods for analyzing electromagnetic scattering

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    Attenuation properties of the normal modes in an overmoded waveguide coated with a lossy material were analyzed. It is found that the low-order modes, can be significantly attenuated even with a thin layer of coating if the coating material is not too lossy. A thinner layer of coating is required for large attenuation of the low-order modes if the coating material is magnetic rather than dielectric. The Radar Cross Section (RCS) from an uncoated circular guide terminated by a perfect electric conductor was calculated and compared with available experimental data. It is confirmed that the interior irradiation contributes to the RCS. The equivalent-current method based on the geometrical theory of diffraction (GTD) was chosen for the calculation of the contribution from the rim diffraction. The RCS reduction from a coated circular guide terminated by a PEC are planned schemes for the experiments are included. The waveguide coated with a lossy magnetic material is suggested as a substitute for the corrugated waveguide

    Wave attenuation and mode dispersion in a waveguide coated with lossy dielectric material

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    The modal attenuation constants in a cylindrical waveguide coated with a lossy dielectric material are studied as functions of frequency, dielectric constant, and thickness of the dielectric layer. A dielectric material best suited for a large attenuation is suggested. Using Kirchhoff's approximation, the field attenuation in a coated waveguide which is illuminated by a normally incident plane wave is also studied. For a circular guide which has a diameter of two wavelengths and is coated with a thin lossy dielectric layer (omega sub r = 9.1 - j2.3, thickness = 3% of the radius), a 3 dB attenuation is achieved within 16 diameters

    DLC2 modulates angiogenic responses in vascular endothelial cells by regulating cell attachment and migration.

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    Deleted in liver cancer 1 (DLC1) is a RhoGTPase activation protein-containing tumor suppressor that associates with various types of cancer. Although DLC2 shares a similar domain structure with that of DLC1, the function of DLC2 is not well characterized. Here, we describe the expression and ablation of DLC2 in mice using a reporter-knockout approach. DLC2 is expressed in several tissues and in endothelial cells (ECs) of blood vessels. Although ECs and blood vessels show no histological abnormalities and mice appear overall healthy, DLC2-mutant mice display enhanced angiogenic responses induced by matrigel and by tumor cells. Silencing of DLC2 in human ECs has reduced cell attachment, increased migration, and tube formation. These changes are rescued by silencing of RhoA, suggesting that the process is RhoA pathway dependent. These results indicate that DLC2 is not required for mouse development and normal vessel formation, but may protect mouse from unwanted angiogenesis induced by, for example, tumor cells

    A size of ~1 AU for the radio source Sgr A* at the centre of the Milky Way

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    Although it is widely accepted that most galaxies have supermassive black holes (SMBHs) at their centers^{1-3}, concrete proof has proved elusive. Sagittarius A* (Sgr A*)^4, an extremely compact radio source at the center of our Galaxy, is the best candidate for proof^{5-7}, because it is the closest. Previous Very Long Baseline Interferometry (VLBI) observations (at 7mm) have detected that Sgr A* is ~2 astronomical unit (AU) in size^8, but this is still larger than the "shadow" (a remarkably dim inner region encircled by a bright ring) arising from general relativistic effects near the event horizon^9. Moreover, the measured size is wavelength dependent^{10}. Here we report a radio image of Sgr A* at a wavelength of 3.5mm, demonstrating that its size is \~1 AU. When combined with the lower limit on its mass^{11}, the lower limit on the mass density is 6.5x10^{21} Msun pc^{-3}, which provides the most stringent evidence to date that Sgr A* is an SMBH. The power-law relationship between wavelength and intrinsic size (The size is proportional to wavelength^{1.09}), explicitly rules out explanations other than those emission models with stratified structure, which predict a smaller emitting region observed at a shorter radio wavelength.Comment: 18 pages, 4 figure

    Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

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    We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified 28^{28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to ∼\sim 2 V/μ\mum to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the 28^{28}Si SOI layer and find a contact hyperfine Stark parameter of ηa=−1.9±0.2×10−3μ\eta_a=-1.9\pm0.2\times10^{-3} \mum2^2/V2^2. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure
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