Ultrahigh-temperature microwave annealing of Al⁺- and P⁺-implanted 4H-SiC

In this work, an ultrafast solid-state microwaveannealing has been performed, in the temperature range of 1700–2120°C on Al⁺- and P⁺-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm² scans even for microwaveannealing at 2050°C for 30s. Auger sputter profiling revealed a <7nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N₂, at annealing temperatures up to 2100°C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride. Secondary ion mass spectrometry depth profiling confirmed almost no dopant in diffusion after microwaveannealing at 2100°C for 15s. However, a sublimation of ∼100nm of the surface SiC layer was observed for 15sannealing at 2100°C. Rutherford backscattering spectra revealed a lattice damage-free SiC material after microwaveannealing at 2050°C for 15s, with scattering yields near the virgin SiC material. Van der Pauw–Hall measurements have revealed sheet resistance values as low as 2.4kΩ∕□ for Al⁺-implanted material annealed at 2100°C for 15s and 14Ω∕□ for the P+-implanted material annealed at 1950°C for 30s. The highest electron and hole mobilities measured in this work were 100 and 6.8cm2/Vs, respectively, for the P⁺- and Al⁺-implanted materials.The GMU work is supported by Army Research Of- fice Dr. Prater under Grant No. W911NF-04-1-0428 and a subcontract from LT Technologies under NSF SBIR Grant No. 0539321

Memory properties and charge effect study in Si nanocrystals by scanning capacitance microscopy and spectroscopy

In this letter, isolated Si nanocrystal has been formed by dewetting process with a thin silicon dioxide layer on top. Scanning capacitance microscopy and spectroscopy were used to study the memory properties and charge effect in the Si nanocrystal in ambient temperature. The retention time of trapped charges injected by different direct current (DC) bias were evaluated and compared. By ramp process, strong hysteresis window was observed. The DC spectra curve shift direction and distance was observed differently for quantitative measurements. Holes or electrons can be separately injected into these Si-ncs and the capacitance changes caused by these trapped charges can be easily detected by scanning capacitance microscopy/spectroscopy at the nanometer scale. This study is very useful for nanocrystal charge trap memory application

Immunologisch aktive Glykoproteine aus Baptisia tinctoria.

Chromatographically purified fractions of aqueous-ethanolic extracts from Baptisia tinctoria roots contained a strong lymphocyte DNA synthesis-stimulating activity. Electrophoretic analysis of these fractions revealed four distinct protein bands with molecular masses of P 1 = 58 kD; P4 = 31 kD; P 5 = 26 kD; and P 6 = 14 kD. They contained carbohydrate as determined by periodic acid Schiff staining. An estimation of the approximate amount of sugar was done by using human transferrin as a reference, this method revealed the following values: P 1 = 27%; P 4 = 12%; P 5 = 14%; and P 6 = 8%. The mixture of proteins and every single band were immunoreactive with a polyclonal antiserum against Baptisia proteins determined in immune and dot blots, respectively. Electrophoretically purified proteins were characterized by tryptic cleavage and determination of their amino acid content. They contained several common amino acids, predominantly aspartic acid, glutamic acid, threonine, and alanine. The content of glucosamine and/or galactosamine was less than 0.2 Molper cent. The four proteins revealed pi values between 5.3 and 4.7. Protein P 4 was immunochemically related to phytohemagglutinin but, in contrast to PHA-P, it exhibited no hemagglutinating activity and no leucagglutinating activity like PHA-L