Quantum information analysis of the phase diagram of the half-filled extended Hubbard model

We examine the phase diagram of the half-filled one-dimensional extended Hubbard model using quantum information entropies within the density-matrix renormalization group. It is well known that there is a charge-density-wave phase at large nearest-neighbor and small on-site Coloumb repulsion and a spin-density-wave at small nearest-neighbor and large on-site Coloumb repulsion. At intermediate Coulomb interaction strength, we find an additional narrow region of a bond-order phase between these two phases. The phase transition line for the transition out of the charge-density-wave phase changes from first-order at strong coupling to second-order in a parameter regime where all three phases are present. We present evidence that the additional phase-transition line between the spin-density-wave and bond-order phases is infinite order. While these results are in agreement with recent numerical work, our study provides an independent, unbiased means of determining the phase boundaries by using quantum information analysis, yields values for the location of some of the phase boundaries that differ from those previously found, and provides insight into the limitations of numerical methods in determining phase boundaries, especially those of infinite-order transitions.Comment: 8 pages, 7 figure

Elementary Secondary Education Act, Title II Non-Print Expenditures for 1965-1966 in Washington State Public Schools

The purpose of doing this study was to compile, categorize, report and evaluate the data concerning the purchases of non-print materials by Washington State Public Schools with Federal funds provided through Title II Elementary and Secondary Education Act of 1965. The data was collected from Title II applications submitted by Washington State Public Schools to the State Department of Public Instruction as of June 12, 1967

Smoothing and Rothe's method for Stefan problems in enthalpy form

AbstractThe classical two-phase Stefan problem as well as its weak variational formulation model the connection between the different phases of the considered material by interface conditions at the occurring free boundary or by a jump of the enthalpy. One way to treat the corresponding discontinuous variational problems consists in its embedding into a family of continuous ones and applying some standard techniques to the chosen approximation problems. The aim of the present paper is to analyze a semi-discretization via Rothe's method and its convergence behavior in dependence of the smoothing parameter. While in Grossmann et al. (Optimization, in preparation) the treatment of the Stefan problem is based on the given variable, i.e. the temperature, here first a transformation via the smoothed enthalpy is applied. Numerical experiments indicate a higher stability of the discretization by Rothe's method. In addition, to avoid inner iterations a frozen coefficient approach as common in literature is used

Float zone experiments in space

The molten zone/freezing crystal interface system and all the mechanisms were examined. If Marangoni convection produces oscillatory flows in the float zone of semiconductor materials, such as silicon, then it is unlikely that superior quality crystals can be grown in space using this process. The major goals were: (1) to determine the conditions for the onset of Marangoni flows in molten tin, a model system for low Prandtl number molten semiconductor materials; (2) to determine whether the flows can be suppressed by a thin oxide layer; and (3) based on experimental and mathematical analysis, to predict whether oscillatory flows will occur in the float zone silicon geometry in space, and if so, could it be suppressed by thin oxide or nitride films. Techniques were developed to analyze molten tin surfaces in a UHV system in a disk float zone geometry to minimize buoyancy flows. The critical Marangoni number for onset of oscillatory flows was determined to be greater than 4300 on atomically clean molten tin surfaces