Development and fabrication of improved power transistor switches

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed

Intrinsic adaptive mesh techniques

An alternating direction adaptive grid movement code was developed and a thesis adaptive angular meshes was directed. The alternating direction code was also established on the NASA Langley computer system and is available for use there. In essence, grid points are moved on an abstract surface above physical space by means of alternating coordinate directions. The abstract surface is formed with the salient solution properties if they can be extracted by a priori physical reasoning; or otherwise, in the absence of such reasoning, by the use of error estimates in some chosen norm. Upon formulation, all important driving properties for adaptive purposes are consolidated into one object - the abstract surface. At a basic level, a uniform distribution of surface points is equivalent to gradient resolution. This arises from a projection back down into physical space. At a higher level, a more accurate view of the abstract surface is obtained when changes in surface direction are also resolved. The appropriate measure for direction changes is normal curvature. It is defined as the rate of change of surface tangent planes as a surface coordinate curve is transversed in uniform increments of arc length

Pregibit: A Family of Discrete Choice Models

The pregibit discrete choice model is built on a distribution that allows symmetry or asymmetry and thick tails, thin tails or no tails. Thus the model is much richer than the traditional models that are typically used to study behavior that generates discrete choice outcomes. Pregibit nests logit, approximately nests probit, loglog, cloglog and gosset models, and yields a linear probability model that is solidly founded on the discrete choice framework that underlies logit and probit.post-secondary education, probit, logit, asymmetry, discrete choice, mortgage application

Analysis of the effects of interpolation and enhancement of LANDSAT-1 Data on classification and area estimation accuracy

There are no author-identified significant results in this report

Diagnosing the Productivity Effect of Public Capital in the Private Sector

Does public capital contribute to the productivity in the private sector? If so, which part of the private sector benefits most? Is public capital a substitute for or a complement of labor and private capital? This paper addresses these questions with both cost and profit function models estimated on U.S. time series data of the private sector and two of its subsectors. It pays special attention to nonstationarity in the data, to endogeneity in the price variables, and to the statistical and economic significance of the public capital effect.

Recent advances in GaAs/Ge solar cells

By growing the GaAs cell on a Ge substrate, the advantages of GaAs cells can be retained and the higher mechanical strength of the Ge makes larger, thinner GaAs cells possible. To conform to immediate user requirements, GaAs growth conditions were modified to eliminate the additional PV output at GaAs/Ge interface. To demonstrate acceptable cell manufacturing technology, the major areas in cell manufacture were analyzed and developed, and efficiency combined. Also the cells were successfully assembled on current lightweight arrays. The main areas of effort are discussed

Pressure-Temperature Phase Diagram of Multiferroic Ni3V2O8Ni_3V_2O_8

The pressure-temperature phase diagram of multiferroic $Ni_3V_2O_8$ is investigated for hydrostatic pressures up to 2 GPa. The stability range of the ferroelectric phase associated with the incommensurate helical spin order is reduced by pressure and ferroelectricity is completely suppressed at the critical pressure of 1.64 GPa at 6.2 K. Thermal expansion measurements at ambient pressure show strong step-like anomalies of the lattice parameters associated with the lock-in transition into the commensurate paraelectric phase. The expansion anomalies are highly anisotropic, the related volume change is consistent with the high-pressure phase diagram