On the linewidth enhancement factor alpha in semiconductor injection lasers

A simple model for the linewidth enhancement factor alpha and its frequency dependence in semiconductor lasers is presented. Calculations based on this model are in reasonable agreement with experimental results

Influence of retardation effects on 2D magnetoplasmon spectrum

Within dissipationless limit the magnetic field dependence of magnetoplasmon spectrum for unbounded 2DEG system found to intersect the cyclotron resonance line, and, then approaches the frequency given by light dispersion relation. Recent experiments done for macroscopic disc-shape 2DEG systems confirm theory expectations.Comment: 2 pages,2 figure

A Stochastic Model Study of the Movement of Solid Particles

Stochastic transport model for suspended solid particle flow in corner of rectangular channe

Carrier leakage and temperature dependence of InGaAsP lasers

A direct measurement of electron and hole leakage in InGaAsP/InP lasers has been carried out. The effect of electron leakage on the temperature sensitivity of InGaAsP/InP lasers has been revealed

InGaAsP/InP undercut mesa laser with planar polyimide passivation

An undercut mesa laser is fabricated on an n + -InP substrate using a single step liquid phase epitaxy growth process and a planar structure is obtained by using a polyimide filling layer. The lasers operate at fundamental transverse mode due to a scattering loss mechanism. Threshold currents of 18 mA and stable single transverse mode operating at high currents are obtained

Direct measurement of the carrier leakage in an InGaAsP/InP laser

Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser-bipolar-transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions