Shifting donor-acceptor photoluminescence in N-doped ZnO

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region. The analysis of excitation-intensity dependence of the PL peak shift with a fluctuation model has proven that our observed growth-technique dependence was explained in terms of the inhomogeneity of charged impurity distribution. It was found that the inhomogeneity in the sample prepared with the process showing better electrical property was significantly smaller in spite of the similar nitrogen concentration. The activation energy of acceptor has been evaluated to be $\approx 170$ meV, which is independent of the nitrogen concentration.Comment: 4 pages, 3 figures, 1 table, RevTeX4, to appear in the July issue of J. Phys. Soc. Jp

Single-valley quantum Hall ferromagnet in a dilute Mg_xZn_(1−x)O/ZnO strongly correlated two-dimensional electron system

We investigate the spin susceptibility (g^∗m^∗) of dilute two-dimensional (2D) electrons confined at the Mg_xZn_(1−x)O/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g^∗m^∗, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g^∗m^∗ leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates that the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime

Single-valley quantum Hall ferromagnet in a dilute Mg_xZn_(1−x)O/ZnO strongly correlated two-dimensional electron system

We investigate the spin susceptibility (g^∗m^∗) of dilute two-dimensional (2D) electrons confined at the Mg_xZn_(1−x)O/ZnO heterointerface. Magnetotransport measurements show a four-fold enhancement of g^∗m^∗, dominated by the increase in the Landé g-factor. The g-factor enhancement leads to a ferromagnetic instability of the electron gas as evidenced by sharp resistance spikes. At high magnetic field, the large g^∗m^∗ leads to full spin polarization, where we found sudden increase in resistance around the filling factors of half-integer, accompanied by complete disappearance of fractional quantum Hall (QH) states. Along with its large effective mass and the high electron mobility, our result indicates that the ZnO 2D system is ideal for investigating the effect of electron correlations in the QH regime

Built-in and induced polarization across LaAlO3_3/SrTiO3_3 heterojunctions

Ionic crystals terminated at oppositely charged polar surfaces are inherently unstable and expected to undergo surface reconstructions to maintain electrostatic stability. Essentially, an electric field that arises between oppositely charged atomic planes gives rise to a built-in potential that diverges with thickness. In ultra thin film form however the polar crystals are expected to remain stable without necessitating surface reconstructions, yet the built-in potential has eluded observation. Here we present evidence of a built-in potential across polar \lao ~thin films grown on \sto ~substrates, a system well known for the electron gas that forms at the interface. By performing electron tunneling measurements between the electron gas and a metallic gate on \lao ~we measure a built-in electric field across \lao ~of 93 meV/\AA. Additionally, capacitance measurements reveal the presence of an induced dipole moment near the interface in \sto, illuminating a unique property of \sto ~substrates. We forsee use of the ionic built-in potential as an additional tuning parameter in both existing and novel device architectures, especially as atomic control of oxide interfaces gains widespread momentum.Comment: 6 pages, 4 figures. Submitted to Nature physics on May 1st, 201

Even-denominator fractional quantum Hall physics in ZnO

The fractional quantum Hall (FQH) effect emerges in high-quality two-dimensional electron systems exposed to a magnetic field when the Landau-level filling factor, ν_e, takes on a rational value. Although the overwhelming majority of FQH states have odd-denominator fillings, the physical properties of the rare and fragile even-denominator states are most tantalizing in view of their potential relevance for topological quantum computation. For decades, GaAs has been the preferred host for studying these even-denominator states, where they occur at ν_e = 5/2 and 7/2. Here we report an anomalous series of quantized even-denominator FQH states outside the realm of III–V semiconductors in the MgZnO/ZnO 2DES electron at ν_e = 3/2 and 7/2, with precursor features at 9/2; all while the 5/2 state is absent. The effect in this material occurs concomitantly with tunability of the orbital character of electrons at the chemical potential, thereby realizing a new experimental means for investigating these exotic ground states

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode

We report the fabrication of heterostructure white light–emitting diode (LED) comprised of n-ZnO nanotubes (NTs) aqueous chemically synthesized on p-GaN substrate. Room temperature electroluminescence (EL) of the LED demonstrates strong broadband white emission spectrum consisting of predominating peak centred at 560 nm and relatively weak violet–blue emission peak at 450 nm under forward bias. The broadband EL emission covering the whole visible spectrum has been attributed to the large surface area and high surface states of ZnO NTs produced during the etching process. In addition, comparison of the EL emission colour quality shows that ZnO nanotubes have much better quality than that of the ZnO nanorods. The colour-rendering index of the white light obtained from the nanotubes was 87, while the nanorods-based LED emit yellowish colour