High efficiency coherent optical memory with warm rubidium vapour

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require optical memory as do deterministic logic gates for optical quantum computing. In this paper we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory. We also show storage recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory

An AC Stark Gradient Echo Memory in Cold Atoms

The burgeoning fields of quantum computing and quantum key distribution have created a demand for a quantum memory. The gradient echo memory scheme is a quantum memory candidate for light storage that can boast efficiencies approaching unity, as well as the flexibility to work with either two or three level atoms. The key to this scheme is the frequency gradient that is placed across the memory. Currently the three level implementation uses a Zeeman gradient and warm atoms. In this paper we model a new gradient creation mechanism - the ac Stark effect - to provide an improvement in the flexibility of gradient creation and field switching times. We propose this scheme in concert with a move to cold atoms (~1 mK). These temperatures would increase the storage times possible, and the small ensemble volumes would enable large ac Stark shifts with reasonable laser power. We find that memory bandwidths on the order of MHz can be produced with experimentally achievable laser powers and trapping volumes, with high precision in gradient creation and switching times on the order of nanoseconds possible. By looking at the different decoherence mechanisms present in this system we determine that coherence times on the order of 10s of milliseconds are possible, as are delay-bandwidth products of approximately 50 and efficiencies over 90%

Configurable unitary transformations and linear logic gates using quantum memories

We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favourable scaling with an increasing number of modes where N memories can be configured to implement an arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional CZ gate.Comment: 5 pages, 2 figure

Storage and Manipulation of Light Using a Raman Gradient Echo Process

The Gradient Echo Memory (GEM) scheme has potential to be a suitable protocol for storage and retrieval of optical quantum information. In this paper, we review the properties of the $\Lambda$-GEM method that stores information in the ground states of three-level atomic ensembles via Raman coupling. The scheme is versatile in that it can store and re-sequence multiple pulses of light. To date, this scheme has been implemented using warm rubidium gas cells. There are different phenomena that can influence the performance of these atomic systems. We investigate the impact of atomic motion and four-wave mixing and present experiments that show how parasitic four-wave mixing can be mitigated. We also use the memory to demonstrate preservation of pulse shape and the backward retrieval of pulses.Comment: 26 pages, 13 figure

Time- and frequency-domain polariton interference

We present experimental observations of interference between an atomic spin coherence and an optical field in a {\Lambda}-type gradient echo memory. The interference is mediated by a strong classical field that couples a weak probe field to the atomic coherence through a resonant Raman transition. Interference can be observed between a prepared spin coherence and another propagating optical field, or between multiple {\Lambda} transitions driving a single spin coherence. In principle, the interference in each scheme can yield a near unity visibility.Comment: 11 pages, 5 figure

Unification of bulk and interface electroresistive switching in oxide systems

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.Comment: 4 pages, 3 figures, accepted in PR

Maximal quadratic modules on *-rings

We generalize the notion of and results on maximal proper quadratic modules from commutative unital rings to $\ast$-rings and discuss the relation of this generalization to recent developments in noncommutative real algebraic geometry. The simplest example of a maximal proper quadratic module is the cone of all positive semidefinite complex matrices of a fixed dimension. We show that the support of a maximal proper quadratic module is the symmetric part of a prime $\ast$-ideal, that every maximal proper quadratic module in a Noetherian $\ast$-ring comes from a maximal proper quadratic module in a simple artinian ring with involution and that maximal proper quadratic modules satisfy an intersection theorem. As an application we obtain the following extension of Schm\" udgen's Strict Positivstellensatz for the Weyl algebra: Let $c$ be an element of the Weyl algebra $\mathcal{W}(d)$ which is not negative semidefinite in the Schr\" odinger representation. It is shown that under some conditions there exists an integer $k$ and elements $r_1,...,r_k \in \mathcal{W}(d)$ such that $\sum_{j=1}^k r_j c r_j^\ast$ is a finite sum of hermitian squares. This result is not a proper generalization however because we don't have the bound $k \le d$.Comment: 11 page

Activation Energy of Metastable Amorphous Ge2Sb2Te5 from Room Temperature to Melt

Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K - 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 K and reaching zero at ~930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ~ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ~ 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with degenerate semiconductors, and the dS/dT and room temperature activation energy show a linear correlation. The single-crystal fcc is calculated to have dS/dT = 0.153 {\mu}V/K for an activation energy of zero and a Fermi level 0.16 eV below the valance band edge.Comment: 5 pages, 5 figure