5 research outputs found
Multi-wavelength emission from a single InGaN/GaN nanorod analyzed by cathodoluminescence hyperspectral imaging
No full textWafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications
No full textEffective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
No full textBreaking the Carrier Injection Bottleneck of Phosphor-Free Nanowire White Light-Emitting Diodes
No full textNitride Nanowires for Light Emitting Diodes
No full textInternational audienceThis chapter describes the present status of nitride nanowire (NW) light emitting diodes (LEDs). The main focus is on the NW synthesized by a bottom-up approach. NW growth methods are described and the device processing is presented. Different realizations of NW LEDs are reviewed, grouped by their spectral domain and the targeted applications. Existing challenges of NW technology for LEDs are analyzed. New functionalities offered by the NW geometry are described, namely the use of NWs to create mechanically flexible light sources
