85 research outputs found

    Genetic pathogenesis of essential arterial hypertension (the review)

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    It is proved that genetic factors may be considered as fundamental in the development of essential arterial hypertension (AH). Important role in this process belongs to the genes whose products are involved in regulating blood pressure - adrenergic, renin-angiotensin-aldosterone, and homocyclic bradykinin systems. These systems are closely connected by serial and parallel chemical reactions that enable to use genetic testing to determine the state of the whole system. Analysis of polymorphic markers of different groups of genes encoding components of the renin-angiotensin-aldosterone system allows to define the role of each of the pathogenic factor of hypertension in the development of the diseas

    Spin Accumulation in Quantum Wires with Strong Rashba Spin-Orbit Coupling

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    We present analytical and numerical results for the effect of Rashba spin-orbit coupling on band structure, transport, and interaction effects in quantum wires when the spin precession length is comparable to the wire width. In contrast to the weak-coupling case, no common spin-quantization axis can be defined for eigenstates within a single-electron band. The situation with only the lowest spin-split subbands occupied is particularly interesting because electrons close to Fermi points of the same chirality can have approximately parallel spins. We discuss consequences for spin-dependent transport and effective Tomonaga-Luttinger descriptions of interactions in the quantum wire.Comment: 4 pages, 4 figures, expanded discussion of spin accumulatio

    Effect of the Surface on the Electron Quantum Size Levels and Electron g-Factor in Spherical Semiconductor Nanocrystals

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    The structure of the electron quantum size levels in spherical nanocrystals is studied in the framework of an eight--band effective mass model at zero and weak magnetic fields. The effect of the nanocrystal surface is modeled through the boundary condition imposed on the envelope wave function at the surface. We show that the spin--orbit splitting of the valence band leads to the surface--induced spin--orbit splitting of the excited conduction band states and to the additional surface--induced magnetic moment for electrons in bare nanocrystals. This additional magnetic moment manifests itself in a nonzero surface contribution to the linear Zeeman splitting of all quantum size energy levels including the ground 1S electron state. The fitting of the size dependence of the ground state electron g factor in CdSe nanocrystals has allowed us to determine the appropriate surface parameter of the boundary conditions. The structure of the excited electron states is considered in the limits of weak and strong magnetic fields.Comment: 11 pages, 4 figures, submitted to Phys. Rev.

    Spin-orbit coupling and intrinsic spin mixing in quantum dots

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    Spin-orbit coupling effects are studied in quantum dots in InSb, a narrow-gap material. Competition between different Rashba and Dresselhaus terms is shown to produce wholesale changes in the spectrum. The large (and negative) gg-factor and the Rashba field produce states where spin is no longer a good quantum number and intrinsic flips occur at moderate magnetic fields. For dots with two electrons, a singlet-triplet mixing occurs in the ground state, with observable signatures in intraband FIR absorption, and possible importance in quantum computation.Comment: REVTEX4 text with 3 figures (high resolution figs available by request). Submitted to PR

    Сравнительная эффективность современных методик анестезиологического пособия при бронхоскопиях у детей

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    The study, described in this article, was conducted on the basis of 45 bronchoscopies of children ill the age from 6 months till 14 years old. The aim of the studv was a determination of optimum anestesiоlogical procedure. The analysis of hemodynamic data, pustanestetie recovery and conscious mind activityof patients who underwent narcosis was made in different groiip of the patients, the result presented tallies I'licre are also given several charts of the anestesiоlogical procedures.В данной статье приведены результаты исследований на основание 45 бронхоскопий у детей от 6 месяцев и до 14 лет. Цель исследования - оптимизировать процедуру анестезии

    Phonon Raman scattering in LaMn₁₋xCoxO₃ (x = 0, 0.2, 0.3, 0.4, and 1.0)

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    The Raman-active phonons in perovskite-like LaMn₁–xCoxO₃ (x = 0, 0.2, 0.3, 0.4, and 1.0) were studied by measuring Raman spectra at temperatures of 295 and 5 K. The changes in the spectra with Co doping are correlated with the decrease of orthorhombic distortions. Surprisingly more phonon lines than allowed for the rhombohedral LaCoO₃ structure were observed

    Spin Precession and Oscillations in Mesoscopic Systems

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    We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a two-terminal double-barrier structure with an applied Zeeman field between the barriers and spin disequilibrium in the contacts. Classically, the spin current shows strong tunneling resonances due to spin precession in the region between the two barriers. However, these oscillations are distinguishable from those in the fully coherent case, for which a proper treatment of the electron phase is required. We explain the differences in terms of the presence or absence of coherent multiple wave reflections.Comment: 9 pages, 5 figure

    Spin splitting and precession in quantum dots with spin-orbit coupling: the role of spatial deformation

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    Extending a previous work on spin precession in GaAs/AlGaAs quantum dots with spin-orbit coupling, we study the role of deformation in the external confinement. Small elliptical deformations are enough to alter the precessional characteristics at low magnetic fields. We obtain approximate expressions for the modified gg factor including weak Rashba and Dresselhaus spin-orbit terms. For more intense couplings numerical calculations are performed. We also study the influence of the magnetic field orientation on the spin splitting and the related anisotropy of the gg factor. Using realistic spin-orbit strengths our model calculations can reproduce the experimental spin-splittings reported by Hanson et al. (cond-mat/0303139) for a one-electron dot. For dots containing more electrons, Coulomb interaction effects are estimated within the local-spin-density approximation, showing that many features of the non-iteracting system are qualitatively preserved.Comment: 7 pages, 7 figure

    Spin transport of electrons through quantum wires with spatially-modulated strength of the Rashba spin-orbit interaction

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    We study ballistic transport of spin-polarized electrons through quantum wires in which the strength of the Rashba spin-orbit interaction (SOI) is spatially modulated. Subband mixing, due to SOI, between the two lowest subbands is taken into account. Simplified approximate expressions for the transmission are obtained for electron energies close to the bottom of the first subband and near the value for which anticrossing of the two lowest subbands occurs. In structures with periodically varied SOI strength, {\it square-wave} modulation on the spin transmission is found when only one subband is occupied and its possible application to the spin transistor is discussed. When two subbands are occupied the transmission is strongly affected by the existence of SOI interfaces as well as by the subband mixing

    Effect of bulk inversion asymmetry on the Datta-Das transistor

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    A model of the Datta-Das spin field-effect transistor is presented which, in addition to the Rashba interaction, takes into account the influence of bulk inversion asymmetry of zinc-blende semiconductors. In the presence of bulk inversion asymmetry, the conductance is found to depend significantly on the crystallographic orientation of the channel. We determine the channel direction optimal for the observation of the Datta-Das effect in GaAs and InAs-based devices.Comment: 4 pages, Revtex4, 4 EPS figure
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