80 research outputs found

    Two-dimensional magnetotransport in Bi2Te2Se nanoplatelets

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    Single-crystalline Bi2Te2Se nanoplates with thicknesses between 8 and 30 nm and lateral sizes of several micrometers were synthesized by a vapour-solid growth method. Angle-dependent magnetoconductance measurements on individual nanoplates revealed the presence of a two-dimensional weak anti-localization effect. In conjunction with gate-dependent charge transport studies performed at different temperatures, evidence was gained that this effect originates from the topologically protected surface states of the nanoplates

    Direct observation of propagating spin waves in the 2D van der Waals ferromagnet Fe5GeTe2

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    Magnetism in reduced dimensionalities is of great fundamental interest while also providing perspectives for applications of materials with novel functionalities. In particular, spin dynamics in two dimensions (2D) have become a focus of recent research. Here, we report the observation of coherent propagating spin-wave dynamics in a ∌30 nm thick flake of 2D van der Waals ferromagnet Fe5GeTe2 using X-ray microscopy. Both phase and amplitude information were obtained by direct imaging below TC for frequencies from 2.77 to 3.84 GHz, and the corresponding spin-wave wavelengths were measured to be between 1.5 and 0.5 ÎŒm. Thus, parts of the magnonic dispersion relation were determined despite a relatively high magnetic damping of the material. Numerically solving an analytic multilayer model allowed us to corroborate the experimental dispersion relation and predict the influence of changes in the saturation magnetization or interlayer coupling, which could be exploited in future applications by temperature control or stacking of 2D-heterostructures

    Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy

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    The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by the topological insulator Bi2Te2Se, we show that via van der Waals epitaxial growth on thin hBN substrates the structural quality of such nanoplatelets can be substantially improved. The surface state carrier mobility of nanoplatelets on hBN is increased by a factor of about 3 compared to platelets on conventional Si/SiOx substrates, which enables the observation of well-developed Shubnikov-de Haas oscillations. We furthermore demonstrate the possibility to effectively tune the Fermi level position in the films with the aid of a back gate

    Effect of the electronic structure of carbon nanotubes on the selectivity of electrochemical functionalization

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    The functionalization of carbon nanotubes through electrochemical routes is gaining importance due to the high degree of control achievable and the ability to render the tubes with a variety of chemical and biological species. In this article, we report systematic investigations on the grafting of phenyl groups through diazonium coupling onto individual metallic and semiconducting carbon nanotubes both experimentally and theoretically. The results show clearly that by optimizing the electrochemical conditions it is possible to obtain a high degree of selectivity for the coupling of phenyl radicals onto metallic nanotubes. The outlined conclusions have strong implications for the design of strategies for the controlled functionalization of individual single-wall carbon nanotubes

    Efficient Charge Extraction out of Nanoscale Schottky Contacts to CdS Nanowires

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    Charge recombination dynamics in semiconductor nanostructures is of vital importance for photovoltaic or photodetector device applications. We use local photocurrent measurements to explore spatially separated drift- and diffusion-currents close to the edge of gold contacts on top of cadmium sulfide nanowires. By theoretical modeling of the experimental photocurrent profiles, the electron diffusion length and lifetime in the wires are obtained to 0.8 mu m and 1 ns, respectively. In contrast to bulk devices, the nanoscale dimensions of the involved Schottky contacts enable a highly efficient charge carrier extraction from below the electrodes. This finding paves the way for designing nanostructured optoelectronic devices of improved performance

    Electric field effect in graphite crystallites

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    Graphite is a highly anisotropic crystal with a quasi-two-dimensional electronic structure exhibiting high intrinsic charge carrier mobility. Here, we investigate the effect of an electric field on the resistance of individual graphite crystallites with a thickness on the order of 40 nm. Ambipolar field-effect behavior was achieved with the aid of a polymer electrolyte gate. By optimizing the device geometry, devices with an on/off current ratio of up to 4 and carrier mobilities of around 100 cm(2)/Vs could be attained directly on the crystallites. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4719204

    Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures

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    Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac Fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphene, enabled by its intimate coupling to an ultrathin Bi2Te2Se nanoplatelet within a van der Waals epitaxial heterostructure. The spin switching signal, whose magnitude scales inversely with temperature, is detectable up to similar to 15 K. Our findings establish topological insulators as prospective future components of spintronic devices wherein spin manipulation is achieved by purely electrical means
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