13 research outputs found
Performance-based vs socially supportive culture:a cross-national study of descriptive norms and entrepreneurship
This paper is a cross-national study testing a framework relating cultural descriptive norms to entrepreneurship in a sample of 40 nations. Based on data from the Global Leadership and Organizational Behavior Effectiveness project, we identify two higher-order dimensions of culture – socially supportive culture (SSC) and performance-based culture (PBC) – and relate them to entrepreneurship rates and associated supply-side and demand-side variables available from the Global Entrepreneurship Monitor. Findings provide strong support for a social capital/SSC and supply-side variable explanation of entrepreneurship rate. PBC predicts demand-side variables, such as opportunity existence and the quality of formal institutions to support entrepreneurship
Prior Knowledge and Entrepreneurial Innovative Success
This paper is concerned with the relationship between innovative success of entrepreneurs and their prior knowledge at the stage of firm formation. We distinguish between different kinds of experience an entrepreneur can possess and find evidence that the innovative success subsequent to firm formation is enhanced by entrepreneurs prior technological knowledge but not by prior market and organizational knowledge. Moreover we find that prior technological knowledge gathered through embeddedness within a research community has an additionally positive influence on post start-up innovative success. This is a first hint towards the importance of collective innovation activities
Measurement of the internal quantum efficiency of InGaN quantum wells
The internal quantum efficiency as a function of the internal electric field was studied in InGaN/GaN based quantumwell heterostructures. Most striking, we find the IQE to be independent of the electron hole overlap for a standard green-emitting single quantum-well LED structure. In standard c-plane grown InGaN quantum wells, internal piezo-fields are responsible for a reduced overlap of electron and hole wavefunction. Minimization of these fields, for example by growth on non-polar m- and a-planes, is generally considered a key to improve the performance of nitride-based light emitting devices. In our experiment, we manipulate the overlap by applying different bias voltages to the standard c-plane grown sample, thus superimposing a voltage induced band-bending to the internal fields. In contrast to the IQE measurement, the dependence of carrier lifetime and wavelength shift on bias voltage could be explained solely by the internal piezo-fields according to the quantum confined Stark effect. Measurements were performed using temperature and bias dependent resonant photoluminescence, measuring luminescence and photocurrent simultaneously. Furthermore, the doping profile in the immediate vicinity of the QWs was found to be a key parameter that strongly influences the IQE measurement. A doping induced intrinsic hole reservoir inside the QWs is suggested to enhance the radiative exciton recombination rate and thus to improve saturation of photoluminescence efficiency
The determinants of job creation and destruction: plant-level evidence for Eastern and Western Germany
Job creation and destruction, Employment growth, Employment-weighted regression,
How entrepreneurs discover opportunities in China: An institutional view
Opportunity recognition, Institutional theory, China,