Terahertz Waveguiding in Silicon-Core Fibers

We propose the use of a silicon-core optical fiber for terahertz (THz) waveguide applications. Finite-difference time-domain simulations have been performed based on a cylindrical waveguide with a silicon core and silica cladding. High-resistivity silicon has a flat dispersion over a 0.1 - 3 THz range, making it viable for propagation of tunable narrowband CW THz and possibly broadband picosecond pules of THz radiation. Simulations show the propagation dynamics and the integrated intensity, from which transverse mode profiles and absorption lengths are extraced. It is found that for 140 - 250 micron core diameters the mode is primarily confined to the core, such that the overall absorbance is only slightly less than in bulk polycrystalline silicon.Comment: 6 pages, 3 figures, journal submissio

Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices

Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films. Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO2 films, while irreversible transitions were found in case of Nb2O5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching.Comment: This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0022-3727/48/33/33530

Multidimensional Coherent Spectroscopy of a Semiconductor Microcavity

Rephasing and non-rephasing two-dimensional coherent spectra map the anti-crossing associated with normal-mode splitting in a semiconductor microcavity. For a 12-meV detuning range near zero detuning, it is observed that there are two diagonal features related to the intra-action of exciton-polariton branches and two off-diagonal features related to coherent interaction between the polaritons. At negative detuning, the lineshape properties of the diagonal intra-action features are distinguishable and can be associated with cavity-like and exciton-like modes. A biexcitonic companion feature is observed, shifted from the exciton feature by the biexciton binding energy. Closer to zero detuning, all features are enhanced and the diagonal intra-action features become nearly equal in amplitude and linewidth. At positive detuning the exciton- and cavity-like characteristics return to the diagonal intra-action features. Off-diagonal interaction features exhibit asymmetry in their amplitudes throughout the detuning range. The amplitudes are strongly modulated (and invert) at small positive detuning, as the lower polariton branch crosses the bound biexciton energy determined from negative detuning spectra.Comment: 13 pages, 4 figure

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation dynamics are similar to those of bulk Bi2Se3, where the contribution of the bulk insulating phase dominates over that of the surface metallic phase. The carrier relaxation time shortens with decreasing film thickness, reaching values comparable to those of noble metals. This effect may result from the hybridization of Dirac cone states at the opposite surfaces for the thinnest films