Pseudo Goldstone Bosons Phenomenology in Minimal Walking Technicolor

We construct the non-linear realized Lagrangian for the Goldstone Bosons associated to the breaking pattern of SU(4) to SO(4). This pattern is expected to occur in any Technicolor extension of the standard model featuring two Dirac fermions transforming according to real representations of the underlying gauge group. We concentrate on the Minimal Walking Technicolor quantum number assignments with respect to the standard model symmetries. We demonstrate that for, any choice of the quantum numbers, consistent with gauge and Witten anomalies the spectrum of the pseudo Goldstone Bosons contains electrically doubly charged states which can be discovered at the Large Hadron Collider.Comment: 25 pages, 5 figure

Inducing energy gaps in graphene monolayer and bilayer

In this paper we propose a mechanism for the induction of energy gaps in the spectrum of graphene and its bilayer, when both these materials are covered with water and ammonia molecules. The energy gaps obtained are within the range 20-30 meV, values compatible to those found in experimental studies of graphene bilayer. We further show that the binding energies are large enough for the adsorption of the molecules to be maintained even at room temperature

Bromination of Graphene and Graphite

We present a density functional theory study of low density bromination of graphene and graphite, finding significantly different behaviour in these two materials. On graphene we find a new Br2 form where the molecule sits perpendicular to the graphene sheet with an extremely strong molecular dipole. The resultant Br+-Br- has an empty pz-orbital located in the graphene electronic pi-cloud. Bromination opens a small (86meV) band gap and strongly dopes the graphene. In contrast, in graphite we find Br2 is most stable parallel to the carbon layers with a slightly weaker associated charge transfer and no molecular dipole. We identify a minimum stable Br2 concentration in graphite, finding low density bromination to be endothermic. Graphene may be a useful substrate for stabilising normally unstable transient molecular states

Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN

The properties of defect complexes consisting of a nitrogen vacancy with a substitutional beryllium or magnesium atom on neighboring lattice sites in hexagonal GaN are calculated using the AIMPRO local-density-functional theory method. Both types of defects VN−BeGa and VN−MgGa are bound with respect to their isolated constituents. They do not appear to have any electronic levels in the bandgap, and are expected to be neutral defects. Important structural differences are found. In its minimum energy configuration, the Be atom in the VN−BeGa complex lies nearly in the same plane as the three equivalent N atoms nearest to it. Thus, it has shorter Be−N bonds than the Ga−N distance in the bulk crystal, while the Mg atom in the VN−MgGa complex occupies a position closer the lattice site of the Ga atom it replaces. Hence, the VN−BeGa complex has a larger open volume than the VN−MgGa complex. This is consistent with positron annihilation experiments [Saarinen et al., J. Cryst. Growth 246, 281 (2002); Hautakangas et al., Phys. Rev. Lett. 90, 137402 (2003)]. The frequency of the highest local vibrational mode of the VN−BeGa center is calculated to be within 3–4 % of an infrared absorption line detected in Be-doped GaN [Clerjaud (private communication)].Peer reviewe

Behavior of hydrogen ions, atoms, and molecules in a-boron studied using density functional calculations

We examine the behavior of hydrogen ions, atoms, and molecules in a-boron using density functionalcalculations. Hydrogen behaves as a negative-U center, with positive H ions preferring to sit off-center oninterlayer bonds and negative H ions sitting preferably at in-plane sites between three B12 icosahedra. Hydrogen atoms inside B12 icosahedral cages are unstable, drifting off-center and leaving the cage with only a 0.09 eV barrier. While H0 is extremely mobile (diffusion barrier 0.25 eV), H+ and H- have higher diffusion barriers of 0.9 eV. Once mobile, these defects will combine, forming H2 in the interstitial void space, which will remain trapped in the lattice until high temperatures. Based on these results we discuss potential differences for hydrogen behavior in -boron and compare with experimental muon-implantation data

Mechanical properties of nanosheets and nanotubes investigated using a new geometry independent volume definition

Cross-sectional area and volume become difficult to define as material dimensions approach the atomic scale. This limits the transferability of macroscopic concepts such as Young's modulus. We propose a new volume definition where the enclosed nanosheet or nanotube average electron density matches that of the parent layered bulk material. We calculate the Young's moduli for various nanosheets (including graphene, BN and MoS2) and nanotubes. Further implications of this new volume definition such as a Fermi level dependent Young's modulus and out-of-plane Poisson's ratio are shown

Passivation of copper in silicon by hydrogen

The structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional copper atoms are found to adopt a configuration with D2d symmetry. We conclude that the symmetry is lowered from Td due to the Jahn-Teller effect. Interstitial hydrogen atoms are found to bind strongly to substitutional copper atoms with an energy that is more than the difference in formation energy over the interstitial site for Cu. The resulting complex has C2v symmetry in the −2 charge state where the H atom is situated about 1.54 Å away from the Cu atom in a [100] direction. In other charge states the symmetry of the defect is lowered to Cs or C1. A second hydrogen atom can bind to this complex with nearly the same energy as the first. Two structures are found for copper dihydride complexes that have nearly equal energies; one with C2 symmetry, and the other with Cs symmetry. The binding energy for a third hydrogen atom is slightly more than for the first. Calculated electronic levels for the model defects relative to one another are found to be in fair to good agreement with experimental data, except for the copper-dihydride complex. The copper trihydride complex has no deep levels in the bandgap, according to our calculations.Peer reviewe

Diversity and phylogeography of begomovirus-associated beta satellites of okra in India

<p>Abstract</p> <p>Background</p> <p>Okra (<it>Abelmoschus esculentus</it>; family <it>Malvaceae</it>) is grown in temperate as well as subtropical regions of the world, both for human consumption as a vegetable and for industrial uses. Okra yields are affected by the diseases caused by phyopathogenic viruses. India is the largest producer of okra and in this region a major biotic constraint to production are viruses of the genus <it>Begomovirus</it>. Begomoviruses affecting okra across the Old World are associated with specific, symptom modulating satellites (beta satellites). We describe a comprehensive analysis of the diversity of beta satellites associated with okra in India.</p> <p>Results</p> <p>The full-length sequences of 36 beta satellites, isolated from okra exhibiting typical begomovirus symptoms (leaf curl and yellow vein), were determined. The sequences segregated in to four groups. Two groups correspond to the beta satellites Okra leaf curl beta satellite (OLCuB) and Bhendi yellow vein beta satellite (BYVB) that have previously been identified in okra from the sub-continent. One sequence was distinct from all other, previously isolated beta satellites and represents a new species for which we propose the name Bhendi yellow vein India beta satellite (BYVIB). This new beta satellite was nevertheless closely related to BYVB and OLCuB. Most surprising was the identification of Croton yellow vein mosaic beta satellite (CroYVMB) in okra; a beta satellite not previously identified in a malvaceous plant species. The okra beta satellites were shown to have distinct geographic host ranges with BYVB occurring across India whereas OLCuB was only identified in northwestern India. Okra infections with CroYVMB were only identified across the northern and eastern central regions of India. A more detailed analysis of the sequences showed that OLCuB, BYVB and BYVIB share highest identity with respect βC1 gene. βC1 is the only gene encoded by beta satellites, the product of which is the major pathogenicity determinant of begomovirus-beta satellite complexes and is involved in overcoming host defenses based on RNAi.</p> <p>Conclusion</p> <p>The diversity of beta satellites in okra across the sub-continent is higher than previously realized and is higher than for any other malvaceous plant species so far analyzed. The beta satellites identified in okra show geographic segregation, which has implications for the development and introduction of resistant okra varieties. However, the finding that the βC1 gene of the major okra beta satellites (OLCuB, BYVB and BYVIB) share high sequence identity and provides a possible avenue to achieve a broad spectrum resistance.</p

Calculated properties of point defects in Be-doped GaN

The properties of several point defects in hexagonal gallium nitride that can compensate beryllium shallow acceptors (BeGa) are calculated using the AIMPRO method based on local density functional theory. BeGa itself is predicted to have local vibrational modes (LVM’s) very similar to magnesium acceptors. The highest frequency is about 663cm−1. Consistent with other recent studies, we find that interstitial beryllium double donors and single-donor beryllium split interstitial pairs at gallium sites are very likely causes of compensation. The calculations predict that the split interstitial pairs possess three main LVM’s at about 1041, 789, and 738cm−1. Of these, the highest is very close to the experimental observation in Be-doped GaN. Although an oxygen donor at the nearest-neighboring site to a beryllium acceptor (BeGa−ON) is also a prime suspect among defects that are possibly responsible for compensation, its highest frequency is calculated to be about 699cm−1 and hence is not related in any way to the observed center. Another mode for this defect is estimated to be about 523cm−1 and is localized on the ON atom. These two vibrations of BeGa−ON are thus equivalent to those for the isolated substitutional centers perturbed by the presence of their impurity partners.Peer reviewe