27 research outputs found

    Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

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    The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.Comment: Accepted by Nature Physic

    Weak antilocalization and disorder-enhanced electron interactions in annealed films of the phase-change compound GeSb2Te4

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    Phase-change materials can be reversibly switched between amorphous and crystalline states and often show strong contrast in the optical and electrical properties of these two phases. They are now in widespread use for optical data storage, and their fast switching and a pronounced change of resistivity upon crystallization are also very attractive for nonvolatile electronic data storage. Nevertheless, several open questions remain regarding the electronic states and charge transport in these compounds. In this work, we study electrical transport in thin metallic films of the disordered, crystalline phase-change material GeSb2Te4. We observe weak antilocalization and disorder-enhanced Coulomb interaction effects at low temperatures, and separate the contributions of these two phenomena to the temperature dependence of the resistivity, Hall effect, and magnetoresistance. Strong spin-orbit scattering causes positive magnetoresistance at all temperatures, and a careful analysis of the low-field magnetoresistance allows us to extract the temperature-dependent electron dephasing rate and study other scattering phenomena. We find electron dephasing due to inelastic electron-phonon scattering at higher temperatures, electron-electron scattering dephasing at intermediate temperatures, and a crossover to weak temperature dependence below 1 K

    Shubnikov-de Haas quantum oscillations reveal a reconstructed Fermi surface near optimal doping in a thin film of the cuprate superconductor Pr1.86Ce0.14CuO4±δ

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    We study magnetotransport properties of the electron-doped superconductor Pr2-xCexCuO4±δ with x=0.14 in magnetic fields up to 92 T, and observe Shubnikov-de Haas magnetic quantum oscillations. The oscillations display a single frequency F=255±10 T, indicating a small Fermi pocket that is ∼1% of the two-dimensional Brillouin zone and consistent with a Fermi surface reconstructed from the large holelike cylinder predicted for these layered materials. Despite the low nominal doping, all electronic properties including the effective mass and Hall effect are consistent with overdoped compounds. Our study demonstrates that the exceptional chemical control afforded by high quality thin films will enable Fermi surface studies deep into the overdoped cuprate phase diagram
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