Plasma assisted deposition of thin carbon films from methane and the influence of the plasma parameters and additional gases

Aschentrup A, Szekeres A, Gesheva K, Hamelmann F, Heinzmann U, Brechling A. Plasma assisted deposition of thin carbon films from methane and the influence of the plasma parameters and additional gases. Vacuum 76. 2004;76(2-3):139-142

Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions

Hamelmann F, Aschentrup A, Brechling A, et al. Plasma-assisted deposition of thin silicon oxide films in a remote PECVD reactor and characterization of films produced under different conditions. Vacuum. 2004;75(4):307-312.Silicon oxide thin films have been deposited in plasma-assisted CVD process. With tetraethylorthosilcate (TEOS, Si(OC2H5)(4)) as precursor and an oxygen RF-plasma, thin films of 50-100 nm were deposited on silicon wafers. The deposition process was controlled in situ by monitoring the soft X-ray reflectivity of the growing layer. The influence of additional gases such as nitrogen and changes of the plasma conditions on the resulting films have been studied by analyzing the films with grazing incidence X-ray reflectometry, infrared spectroscopy, spectral ellipsometry and capacitance-voltage and current-voltage measurements were performed at different temperatures. (C) 2004 Elsevier Ltd. All rights reserved

Unemployment Insurance and the Firm's Employment Strategy: A European and United States Comparison

Focuses on the effects of the changes in unemployment insurance benefits on layoff and working hours policies of firms. Factors contributing to the changes in payment of the insurance funds; Relationship between recession and labor market; Concerns over the distributional employment characteristics of unemployment insurance schemes