Measuring Trapped Ion Qudits

Quantum information has typically focused on using 2-level qubits to perform simulation and computation. We propose to expand the number of levels for computation using qudits, where $d>2$. Doing so could be a viable option for making trapped ion systems scalable for quantum computation. Our group in particular will use Barium ions because of some energy features and convenient laser wavelengths. This thesis presents much of the necessary background needed to work with Barium as a qudit for quantum computation. Energy structure, branching ratios, and saturation intensities are derived and presented. In addition, a method for selecting different isotopes of Barium for trapping is discussed. A method for measuring out the state of a Barium qudit is presented, with error rates estimated to be under $1\%$ for up to 5-level qudits. Finally, various optics projects which were necessary for building up our first ion trap are outlined

Ablation loading and qudit measurements with barium ions

Barium is one of the best ions for performing quantum information in a trapped-ion system. Its long-lived metastable D5/2 state allows for some interesting quantum operations, including the current best state preparation and measurement fidelity in qubits. This metastable state also opens up the possibility of implementing higher-dimensional qudits instead of qubits. However, installing a barium metal source in a vacuum chamber has shown to be somewhat of a challenge. Here, we present a loading technique which uses a barium chloride source instead, making it much easier to install. Laser ablation with a high-energy pulsed laser is used to generate neutral atoms, and a two-step photoionization technique is used to selectively load different isotopes of barium in our ion trap. The process of laser ablation and the plume of atoms it generates are characterized, informing us on how to best load ions. Loading is achieved, and selectivity of our method is demonstrated, giving us a reliable way to load 138Ba+ and 137Ba+ ions. The quadrupole transition into the metastable D5/2 state is investigated, with all of the individual transitions successfully found and characterized for 138Ba+ and 137Ba+. Coherent operations are performed on these transitions, allowing us to use them to define a 13-level qudit, on which we perform a state preparation and measurement experiment. The main error source in operations using this transition is identified to be magnetic field noise, and so we present attempts at mitigating this noise. An ac-line noise compensation method is used, which marginally improved the coherence time of the quadrupole transitions, and an additional method of using permanent magnets is proposed for future work. These efforts will help to make trapping barium more reliable, making it an even more attractive option for trapped ion systems. The state preparation and measurement results using the quadrupole transition to the long-lived metastable D5/2 state establish barium as an interesting platform for performing high-dimensional qudit quantum computing

Developing a Novel Platform for Characterizing Thermoelectric Materials for Uncooled Detectors for Land Imaging Applications

Thermal land imaging (imaging at ~8-14 micron optical wavelength) is an essential tool for understanding and managing terrestrial freshwater resources. Current thermal imaging instruments employ low temperature detectors, which require cryocoolers. Consequently, cost-saving reductions in size, weight, and power can be achieved by employing uncooled detectors. One uncooled detector concept, which NASA is pursuing, is a thermopile detector with sub-micron thick doped-Si thermoelectric materials. In order to characterize the thermoelectric properties of the doped silicon, we designed and optimized a novel apparatus. This simple apparatus measures the Seebeck coefficient with thermally isolated stages and LABVIEW automation. We optimized thermal stability using PID tuning and optimized the thermal contact between the thin film samples and stages using electrically conductive springs. Utilizing our apparatus, we measured the Seebeck coefficient of 0.45 micron thick phosphorus-doped single crystal Si samples bonded to alumina substrates. Using these Seebeck coefficient measurements and four-wire electrical resistivity measurements, we determined the relationship between the thermoelectric figure of merit and dopant concentration. These characterization results for doped-Si will guide our thermopile detector design to provide an optimal and competitive detector alternative for future thermal imaging instruments