Visualising gas heating from an RF plasma loudspeaker

In an electro-acoustic transduction mechanism, an ac modulation (here in the audio frequency range) of the electric field in an atmospheric pressure air plasma gives rise to a rapid increase in the gas temperature and dimensions of the gas volume. As in natural lightning, the rapid expansion in the ionised column though the air produces external pressure variations at the modulation frequency.  \ud Spatial and temporal measurement of the gas temperature can identify the nature of the thermal expansion and provide a direct approach to understanding its relationship to the sound pressure wave that is generated. However, the established method through spectroscopic measurement of rotational line emission from nitrogen molecules is limited to the main current channel where relaxation and subsequent optical emission of the excited nitrogen molecules occurs. The wider picture is revealed through the use of the Schlieren method where the refractive index gradients caused by gas heating in the plasma are imaged

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

Si/Si0.64Ge0.36/Si heterostructures have been grown at low temperature (450 °C) to avoid the strain-induced roughening observed for growth temperatures of 550 °C and above. The electrical properties of these structures are poor, and thought to be associated with grown-in point defects as indicated in positron annihilation spectroscopy. However, after an in situ annealing procedure (800 °C for 30 min) the electrical properties dramatically improve, giving an optimum 4 K mobility of 2500 cm2 V – 1 s – 1 for a sheet density of 6.2 × 1011 cm – 2. The low temperature growth yields highly planar interfaces, which are maintained after anneal as evidenced from transmission electron microscopy. This and secondary ion mass spectroscopy measurements demonstrate that the metastably strained alloy layer can endure the in situ anneal procedure necessary for enhanced electrical properties. Further studies have shown that the layers can also withstand a 120 min thermal oxidation at 800 °C, commensurate with metal–oxide–semiconductor device fabrication

Superconducting phase diagram of the filled skuterrudite PrOs4Sb12

We present new measurements of the specific heat of the heavy fermion superconductor PrOs4Sb12, on a sample which exhibits two sharp distinct anomalies at Tc1= 1.89K and Tc2= 1.72K. They are used to draw a precise magnetic field-temperature superconducting phase diagram of PrOs4Sb12 down to 350 mK. We discuss the superconducting phase diagram of PrOs4Sb12 and its possible relation with an unconventional superconducting order parameter. We give a detailed analysis of Hc2(T), which shows paramagnetic limitation (a support for even parity pairing) and multiband effects

Formation of collective spins in frustrated clusters

Using magnetization, specific heat and neutron scattering measurements, as well as exact calculations on realistic models, the magnetic properties of the \lacuvo compound are characterized on a wide temperature range. At high temperature, this oxide is well described by strongly correlated atomic $S$=1/2 spins while decreasing the temperature it switches to a set of weakly interacting and randomly distributed entangled pseudo spins $\tilde S=1/2$ and $\tilde S=0$. These pseudo-spins are built over frustrated clusters, similar to the kagom\'e building block, at the vertices of a triangular superlattice, the geometrical frustration intervening then at different scales.Comment: 10 page

Double superconducting transition in the filled skutterudite PrOs4Sb12 and sample characterizations

A thorough characterization of many samples of the filled skutterudite compound PrOs4Sb12 is provided. We find that the double superconducting transition in the specific heat Tc1~1.89K and Tc2~1.72K tends to appear in samples with a large residual resistivity ratio, large specific heat jump at the superconducting transition and with the highest absolute value of the specific heat above Tc1. However, we present evidence which casts doubt on the intrinsic nature of the double superconducting transition. The ratio of the two specific heat jumps \Delta C(Tc1)/\Delta C(Tc2) shows a wide range of values on crystals from different batches but also within the same batch. This ratio was strongly reduced by polishing a sample down to 120um. Remarkably, three samples exhibit a single sharp transition of ~15mK in width at Tc~1.7K. The normalized specific heat jump (C-Cnormal)/Cnormal at Tc of two of them is higher than ~32% so larger than the sum of the two specific heat jumps when a double transition exists. As an evidence of better quality, the slope in the transition is at least two time steeper. We discuss the origins of the double transition; in particular we consider, based on X-ray diffraction results, a scenario involving Pr-vacancies. The superconducting phase diagram under magnetic field of a sample with a single transition is fitted with a two-band model taking into account the good values for the gap as deduced from thermal conductivity measurements.Comment: 10 pages, 9 figures, 2 tables, submitted to Physical review

Statistics of Magnetic Fields for OB Stars

Based on an analysis of the catalog of magnetic fields, we have investigated the statistical properties of the mean magnetic fields for OB stars. We show that the mean effective magnetic field ${\cal B}$ of a star can be used as a statistically significant characteristic of its magnetic field. No correlation has been found between the mean magnetic field strength ${\cal B}$ and projected rotational velocity of OB stars, which is consistent with the hypothesis about a fossil origin of the magnetic field. We have constructed the magnetic field distribution function for B stars, $F({\cal B})$, that has a power-law dependence on ${\cal B}$ with an exponent of $\approx -1.82$. We have found a sharp decrease in the function $F({\cal B})$F for {\cal B}\lem 400 G that may be related to rapid dissipation of weak stellar surface magnetic fields.Comment: 22 pages, 7 figures, accepted Astronomy Letters, 2010, vol.36, No.5, pp.370-379, contact E-mail: [email protected]

Effective mobilities in pseudomorphic Si/SiGe/Si p-channel metal-oxide-semiconductor field-effect transistors with thin silicon capping layers

The room-temperature effective mobilities of pseudomorphic Si/Si0.64Ge0.36/Si p-metal-oxidesemiconductor field effect transistors are reported. The peak mobility in the buried SiGe channel increases with silicon cap thickness. It is argued that SiO2/Si interface roughness is a major source of scattering in these devices, which is attenuated for thicker silicon caps. It is also suggested that segregated Ge in the silicon cap interferes with the oxidation process, leading to increased SiO2/Si interface roughness in the case of thin silicon caps

Reform in the primary school.

The pamphlet suggests reforms to primary school education as every Australian state there had been successive revisions of the course of study, all expressing a shift of emphasis away from monotonous grind and repetition, and towards such occupations as art, handwork, music, and physical education. But the movement towards better things was slow. [p. 5, ed] We have seen that, during primary school years, the child grows in four main ways-physically, intellectually, emotionally and socially. The function of the primary school is to ensure successful growth of all four kinds. It is a fair criticism of the average school that it over-emphasizes intellectual growth and pays scant attention to meeting the physical, emotional, and social needs of its pupils. [p.8, ed] There is great need to infuse into the curriculum more reality and activity. Our courses of study contain much outworn, unnecessarily formal material. [ p.12, ed