Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers

One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiNx) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~100°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximumion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiNx single layers, a minimum WVTR of 5 × 10−4 g/(m2 day), measured at room temperature, was found for a maximum ion energy of ~30 eV. This minimum WVTR value was reduced to 7 × 10−5 g/(m2 day) for a stack of five SiNx single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy.The authors are grateful to Dr. R. Cortes (PMC, Ecole Polytechnique) for XRR analysis, to Dr. P. Chapon (HORIBA Jobin Yvon) for GD-OES analysis and Dr. J. Leroy (CEA Saclay) for XPS analysis. This work was partly supported by the PICS (FrenchPortuguese) project No. 5336. One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layers

In this work we produce and study silicon nitride (SiNx) thin films deposited by Hot Wire Chemical Vapor Depo- sition (HW-CVD) to be used as encapsulation barriers for flexible organic photovoltaic cells fabricated on poly- ethylene terephthalate (PET) substrates in order to increase their shelf lifetime. We report on the results of SiNx double-layers and on the equivalent double-layer stack where an Ar-plasma surface treatment was performed on the first SiNx layer. The Ar-plasma treatment may under certain conditions influences the structure of the interface between the two subsequent layers and thus the barrier properties of the whole system. We focus our attention on the effect of plasma treatment time on the final barrier properties. We assess the encapsulation barrier properties of these layers, using the calcium degradation test where changes in the electrical conductance of encapsulated Ca sensors are monitored with time. The water vapor transmission rate (WVTR) is found to be ~3 × 10−3 g/m2·day for stacked SiNx double-layer with 8 min Ar plasma surface treatment.FCT - CNRS PICS (French–Portuguese no: 5336) projectDirection des Relations Extérieures, Ecole Polytechniqu

Bi-dimensional model for a-Si:H p

In order to fabricate integrated imaging and particle sensors a hydrogenated amorphous silicon (a-Si:H) p+-i-n+ photodiode technology has been developed, optimized and modelled. The realisation of a one-dimensional model of this by Chatterjee has given us a precious modelling reference. In this paper we propose a bi-dimensional model realized in finite elements approach with Atlas-Silvaco Software of particle sensor achieved by a 4 µm p+-i-n+ amorphous silicone photodiode. We will validate it by comparison with the above-mentioned one-dimensional model. The interest of the second dimension lies not only in the calibration of different structures but also in the influence between neighbouring pixels of the sensor and how this will affect their sensibility. Thus a three pixel bi-dimensional structure has been realized. The leakage and crosstalk currents between two neighbouring pixels have been studied and characterized using a uniform AM1.5 light source

Numerical Modeling of an Organic Electrochemical Transistor

We develop a numerical model for the current-voltage characteristics of organic electrochemical transistors (OECTs) based on steady-state Poisson's, Nernst's and Nernst⁻Planck's equations. The model starts with the doping⁻dedoping process depicted as a moving front, when the process at the electrolyte⁻polymer interface and gradually moves across the film. When the polymer reaches its final state, the electrical potential and charge density profiles largely depend on the way the cations behave during the process. One case is when cations are trapped at the polymer site where dedoping occurs. In this case, the moving front stops at a point that depends on the applied voltage; the higher the voltage, the closer the stopping point to the source electrode. Alternatively, when the cations are assumed to move freely in the polymer, the moving front eventually reaches the source electrode in all cases. In this second case, cations tend to accumulate near the source electrode, and most of the polymer is uniformly doped. The variation of the conductivity of the polymer film is then calculated by integrating the density of holes all over the film. Output and transfer curves of the OECT are obtained by integrating the gate voltage-dependent conductivity from source to drain

Experimental nonlinear torque control of a permanent-magnet synchronous motor using saliency

In this paper, a new nonlinear control strategy is proposed for a permanent-magnet salient-pole synchronous motor, This control strategy simultaneously achieves accurate torque control and copper losses minimization without recurring to an internal current loop nor to any feedforward compensation. It takes advantage of the rotor saliency by allowing the current (i(d)) to have nonzero values. This, in turn, allows us to increase the power factor of the machine and to raise the maximum admissible torque. We apply input-output linearization techniques where the inputs are the stator voltages and the outputs are the torque and a judiciously chosen new output. This new output insures a well-defined relative degree and is linked to the copper losses in such a way that, when forced to zero, it leads to maximum machine efficiency. The performance of our nonlinear controller is demonstrated by a real-time implementation using a digital signal processor (DSP) chip on a permanent-magnet salient-pole synchronous motor with sinusoidal flux distribution. The results are compared to the ones obtained with a scheme which forces the i(d) current to zero

Characterization of the pentacene thin-film transistors with an epoxy resin-based polymeric gate insulator

The organic thin-film transistors (OTFTs) incorporating pentacene/SU-8 interface were fabricated and characterized. SU-8, a reliable epoxy-based photoresist, is tested as a potential highly-stable polymeric gate dielectric for OTFTs. The fabricated devices showed promising electrical performance with on-off ratio up to 107 and field-effect mobility up to 0.56 cm2/V s. Several device characteristics are further analyzed. There existed a leakage current path due to the uncontrolled pentacene coverage and we revealed that precise alignment of the evaporation mask of pentacene is critical for eliminating this problem. Pentacene grain formation largely depended on the growth condition on the SU-8 surface and small-grain films offered outstanding performance possibly owing to enhanced inter-domain connections. Natural degradation of the OTFTs is also discussed in terms of environmental stability and the pentacene/SU-8 transistor operated with noticeable air stability under ambient conditions