A CMOS silicon spin qubit

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.Comment: 12 pages, 4 figure

Моделювання впливу власних параметрів генератора високовольтних імпульсів на розрядні характеристики для запалення стримерних розрядів

The impact of generator inherent parameters on discharge characteristics for streamer discharges ignition, the cold plasma of which occupies the entire volume, has been studied. The characteristic feature of this generator is the formation of high-voltage pulses on the load to generate a streamer discharge which is the electrode system with a sufficiently large capacitive component due to the area of the electrodes. The operation of the generator was simulated using the LT Spice IV on the basis of an equivalent circuit was simulated. The individual elements parameters flexibly varied with the help of the model from the low-voltage part and the high-voltage side of the circuit. The possible influence rate of each parameter separately on the output characteristics of the pulse generator was determined. On the basis of the simulation results it allowed to create the pulse generator with a rise time less than 1 ms, pulse repetition rate below 10 kHz and pulse amplitude up to 80 kV. This generator can be used for gas treatment technology and materials surface processing.Проведено компьютерное моделирование разрядных характеристик эквивалентной схемы генератора высоковольтных высокочастотных импульсов с коротким фронтом. Получены зависимости изменения формы и амплитуды выходного напряжения генератора, позволившие найти оптимальные значения элементов схемы для обеспечения зажигания объемного стримерного разряда с объемом холодной плазмы до 100 л.Проведено комп'ютерне моделювання розрядних характеристик еквівалентної схеми генератора високовольтних високочастотних імпульсів з коротким фронтом. Отримано залежності зміни форми та амплітуди вихідної напруги генератора, які дозволили знайти оптимальні значення елементів схеми для забезпечення запалювання об'ємного стримерного розряду з об'ємом холодної плазми до 100 л

Si CMOS platform for quantum information processing

International audienc

28nm Fully-depleted SOI technology: Cryogenic control electronics for quantum computing

International audienc

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

International audienc