Synthesis of Tungsten Oxide Nanowires onto ITO Glass Using T-CVD

Tungsten oxide is an n-type semiconductor with interesting physical and chemical properties that make it suitable for various technological applications. Tungsten oxide nanowires were synthesized not only at low temperature but also without the use of any catalysts. The tungsten oxide nanowires were synthesized at 550 °C with tungsten layers onto the ITO glass using thermal chemical vapor deposition (T-CVD). The SEM image shows that the tungsten oxide nanowires are effectively grown with the 200 nm tungsten film. The Raman spectra shoulder at ~690 cm-1 proves the synthesized of tungsten oxide nanowires.Keywords: ITO glass, thermal chemical vapor deposition, Tungsten oxide nanowire

Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED) displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE) simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when Δ TH = ±0.33 V, the average error rate of the OLED current variation was low (< 0.8%), and when Δ TH OLED = +0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the × (current × resistance) drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the × drop voltage of a power line

Color-tunable mixed photoluminescence emission from Alq3 organic layer in metal-Alq3-metal surface plasmon structure

This work reports the color-tunable mixed photoluminescence (PL) emission from an Alq(3) organic layer in an Au-Alq(3)-Au plasmonic structure through the combination of organic fluorescence emission and another form of emission that is enabled by the surface plasmons in the plasmonic structure. The emission wavelength of the latter depends on the Alq(3) thickness and can be tuned within the Alq(3) fluorescent spectra. Therefore, a two-color broadband, color-tunable mixed PL structure was obtained. Obvious changes in the Commission Internationale d’Eclairage (CIE) coordinates and the corresponding emission colors of Au-Alq(3)-Au samples clearly varied with the Alq(3) thickness (90, 130, and 156 nm)

The analyses on the surface properties of the annealed-diamond membrane

Polycrystalline diamond films were deposited using methane/hydrogen gas mixture on silicon substrates by a microwave plasma chemical vapor deposition (MPCVD) system. From X-ray photoelectron spectroscopy (XPS) analysis, the oxygen & the C signals were observed for the as-deposited diamond film. The oxygen signal was due to physiosorbed water or weakly bound oxygen species. After the 800 8C annealing process, the Si/Si (99.8 eV), Si/O (102.8 eV), Si/Ox (104.8 eV) & the C/O (286.5 eV) bonds appeared for the surface of the diamond film. Moreover, it was shown that the film quality was improved by the 800 8C annealing process. However, it was found that the oxygen signal decreased & the silicon & silicon/oxide bonds almost disappeared for the top surface of the annealed-diamond membrane. It was suggested the oxidized dangling bonds & the silicon components on diamond crystallite surfaces were etched away partly by back-etching process. Furthermore, from Auger electron spectroscopy (AES) analyses, the oxygen & the silicon signals were approximately estimated to be more than 1100 A ° from the bottom surface of annealed-diamond membrane. This indicated that the non-diamond components (included the SiC, SiO2 & amorphous carbon, etc.) in the diamond/silicon interface might be thermally diffused through the grain boundaries to the top surface of the annealeddiamond membrane. These findings may be influential in the development on the characteristic of diamond electrical devices in the future

Silicon Nanowire Networks for the Application of Field Effect Phototransistor

[[abstract]]A random network of silicon nanowires was synthesized on Si3N4/Si substrate via a catalytic reaction in N2 atmosphere at 1000 °C using a parallel plate structure. The nanowires were completely amorphous with an average diameter of 40–80 nm. A commercial high-brightness light emitting diodes was used as the light source in the gate of the field effect phototransistor. It was found that drain current was proportional to the light intensity. It is suggested that the current gain of the photoresponse under the red light illumination is smaller compared to that under the blue light illumination. The maximal current gain increases approximately 30 times under the blue light illumination

Synthesis of Tungsten Oxide Nanowires onto ITO Glass Using T-CVD

Tungsten oxide is an n-type semiconductor with interesting physical and chemical properties that make it suitable for various technological applications. Tungsten oxide nanowires were synthesized not only at low temperature but also without the use of any catalysts. The tungsten oxide nanowires were synthesized at 550 &deg;C with tungsten layers onto the ITO glass using thermal chemical vapor deposition (T-CVD). The SEM image shows that the tungsten oxide nanowires are effectively grown with the 200 nm tungsten film. The Raman spectra shoulder at ~690 cm-1 proves the synthesized of tungsten oxide nanowires.</p