231 research outputs found
Metal-insulator transition and glassy behavior in two-dimensional electron systems
Studies of low-frequency resistance noise demonstrate that glassy freezing
occurs in a two-dimensional electron system in silicon in the vicinity of the
metal-insulator transition (MIT). The width of the metallic glass phase, which
separates the 2D metal and the (glassy) insulator, depends strongly on
disorder, becoming extremely small in high-mobility (low-disorder) samples. The
glass transition is manifested by a sudden and dramatic slowing down of the
electron dynamics, and by a very abrupt change to the sort of statistics
characteristic of complicated multistate systems. In particular, the behavior
of the second spectrum, an important fourth-order noise statistic, indicates
the presence of long-range correlations between fluctuators in the glassy
phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying
materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs.
(includes some low-quality figs; send e-mail to get high-quality figs.
Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
For five different electron and hole systems in two dimensions (Si MOSFET's,
p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, that marks the
onset of strong localization is shown to be a single power-law function of the
scattering rate deduced from the maximum mobility. The resulting curve
defines the boundary separating a localized phase from a phase that exhibits
metallic behavior. The critical density in the limit of infinite
mobility.Comment: 2 pages, 1 figur
Isotope shifts of the (3s3p)P - (3s4s)S Mg I transitions
We report measurements of the isotope shifts of the (3s3p)P -
(3s4s)S Mg I transitions for the stable isotopes Mg (I=0),
Mg (I=5/2) and Mg (I=0). Furthermore the Mg S
hyperfine coefficient A(S) = (-321.6 1.5) MHz is extracted and
found to be in excellent agreement with state-of-the-art theoretical
predictions giving A(S) = -325 MHz and B(S)
MHz. Compared to previous measurements, the data presented in this work is
improved up to a factor of ten.Comment: 4 pages, 4 figures submitted to PR
Convenient Navigation is a Necessary Quality of a Human-Oriented Architectural Environment
В статье рассматриваются вопросы необходимого качества человека-ориентированной архитектурной среды – навигации, виды ориентационно-навигационных подсистем, определенные сходства и различия при создании ориентационно-навигационных систем в пределах открытых и закрытых городских пространств.The article discusses the issues of the necessary quality of a human-oriented architectural environment – navigation, types of orientation and navigation subsystems, certain similarities and differences in the creation of orientation and navigation systems within open and closed urban spaces
Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples
The low-temperature dc conductivities of barely metallic samples of p-type
Si:B are compared for a series of samples with different dopant concentrations,
n, in the absence of stress (cubic symmetry), and for a single sample driven
from the metallic into the insulating phase by uniaxial compression, S. For all
values of temperature and stress, the conductivity of the stressed sample
collapses onto a single universal scaling curve. The scaling fit indicates that
the conductivity of si:B is proportional to the square-root of T in the
critical range. Our data yield a critical conductivity exponent of 1.6,
considerably larger than the value reported in earlier experiments where the
transition was crossed by varying the dopant concentration. The larger exponent
is based on data in a narrow range of stress near the critical value within
which scaling holds. We show explicitly that the temperature dependences of the
conductivity of stressed and unstressed Si:B are different, suggesting that a
direct comparison of the critical behavior and critical exponents for stress-
tuned and concentration-tuned transitions may not be warranted
Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress
We report new measurements of the electrical conductivity sigma of the
canonical three-dimensional metal-insulator system Si:P under uniaxial stress
S. The zero-temperature extrapolation of sigma(S,T -> 0) ~\S - S_c\^mu shows an
unprecidentedly sharp onset of finite conductivity at S_c with an exponent mu =
1. The value of mu differs significantly from that of earlier stress-tuning
results. Our data show dynamical sigma(S,T) scaling on both metallic and
insulating sides, viz. sigma(S,T) = sigma_c(T) F(\S - S_cT^y) where sigma_c(T)
is the conductivity at the critical stress S_c. We find y = 1/znu = 0.34 where
nu is the correlation-length exponent and z the dynamic critical exponent.Comment: 5 pages, 4 figure
The metal-insulator transition in Si:X: Anomalous response to a magnetic field
The zero-temperature magnetoconductivity of just-metallic Si:P scales with
magnetic field, H, and dopant concentration, n, lying on a single universal
curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic
field crossover exponents near 2, and suggest that this anomalously weak
response to a magnetic field is a common feature of uncompensated doped
semiconductors.Comment: 4 pages (including figures
History-dependent relaxation and the energy scale of correlation in the Electron-Glass
We present an experimental study of the energy-relaxation in
Anderson-insulating indium-oxide films excited far from equilibrium. In
particular, we focus on the effects of history on the relaxation of the excess
conductance dG. The natural relaxation law of dG is logarithmic, namely
dG=-log(t). This may be observed over more than five decades following, for
example, cool-quenching the sample from high temperatures. On the other hand,
when the system is excited from a state S_{o} in which it has not fully reached
equilibrium to a state S_{n}, the ensuing relaxation law is logarithmic only
over time t shorter than the time t_{w} it spent in S_{o}. For times t>t_{w}
dG(t) show systematic deviation from the logarithmic dependence. It was
previously shown that when the energy imparted to the system in the excitation
process is small, this leads to dG=P(t/t_{w}) (simple-aging). Here we test the
conjecture that `simple-aging' is related to a symmetry in the relaxation
dynamics in S_{o} and S_{n}. This is done by using a new experimental procedure
that is more sensitive to deviations in the relaxation dynamics. It is shown
that simple-aging may still be obeyed (albeit with a modified P(t/t_{w})) even
when the symmetry of relaxation in S_{o} and S_{n} is perturbed by a certain
degree. The implications of these findings to the question of aging, and the
energy scale associated with correlations are discussed
Using terrestrial laser scanning for characterizing tree structural parameters and their changes under different management in a Mediterranean open woodland
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