Metal-insulator transition and glassy behavior in two-dimensional electron systems

Studies of low-frequency resistance noise demonstrate that glassy freezing occurs in a two-dimensional electron system in silicon in the vicinity of the metal-insulator transition (MIT). The width of the metallic glass phase, which separates the 2D metal and the (glassy) insulator, depends strongly on disorder, becoming extremely small in high-mobility (low-disorder) samples. The glass transition is manifested by a sudden and dramatic slowing down of the electron dynamics, and by a very abrupt change to the sort of statistics characteristic of complicated multistate systems. In particular, the behavior of the second spectrum, an important fourth-order noise statistic, indicates the presence of long-range correlations between fluctuators in the glassy phase, consistent with the hierarchical picture of glassy dynamics.Comment: Contribution to conference on "Noise as a tool for studying materials" (SPIE), Santa Fe, New Mexico, June 2003; 15 pages, 12 figs. (includes some low-quality figs; send e-mail to get high-quality figs.

Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation

For five different electron and hole systems in two dimensions (Si MOSFET's, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density, $n_c$ that marks the onset of strong localization is shown to be a single power-law function of the scattering rate $1/\tau$ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density $n_c \to 0$ in the limit of infinite mobility.Comment: 2 pages, 1 figur

Isotope shifts of the (3s3p)3^3P0,1,2_{0,1,2} - (3s4s)3^3S1_1 Mg I transitions

We report measurements of the isotope shifts of the (3s3p)$^3$P$_{0,1,2}$ - (3s4s)$^3$S$_1$ Mg I transitions for the stable isotopes $^{24}$Mg (I=0), $^{25}$Mg (I=5/2) and $^{26}$Mg (I=0). Furthermore the $^{25}$Mg $^3$S$_1$ hyperfine coefficient A($^3$S$_1$) = (-321.6 $\pm$ 1.5) MHz is extracted and found to be in excellent agreement with state-of-the-art theoretical predictions giving A($^3$S$_1$) = -325 MHz and B($^3$S$_1$) $\simeq 10^{-5}$ MHz. Compared to previous measurements, the data presented in this work is improved up to a factor of ten.Comment: 4 pages, 4 figures submitted to PR

Convenient Navigation is a Necessary Quality of a Human-Oriented Architectural Environment

В статье рассматриваются вопросы необходимого качества человека-ориентированной архитектурной среды – навигации, виды ориентационно-навигационных подсистем, определенные сходства и различия при создании ориентационно-навигационных систем в пределах открытых и закрытых городских пространств.The article discusses the issues of the necessary quality of a human-oriented architectural environment – navigation, types of orientation and navigation subsystems, certain similarities and differences in the creation of orientation and navigation systems within open and closed urban spaces

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted

Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress

We report new measurements of the electrical conductivity sigma of the canonical three-dimensional metal-insulator system Si:P under uniaxial stress S. The zero-temperature extrapolation of sigma(S,T -> 0) ~\S - S_c\^mu shows an unprecidentedly sharp onset of finite conductivity at S_c with an exponent mu = 1. The value of mu differs significantly from that of earlier stress-tuning results. Our data show dynamical sigma(S,T) scaling on both metallic and insulating sides, viz. sigma(S,T) = sigma_c(T) F(\S - S_cT^y) where sigma_c(T) is the conductivity at the critical stress S_c. We find y = 1/znu = 0.34 where nu is the correlation-length exponent and z the dynamic critical exponent.Comment: 5 pages, 4 figure

The metal-insulator transition in Si:X: Anomalous response to a magnetic field

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.Comment: 4 pages (including figures

History-dependent relaxation and the energy scale of correlation in the Electron-Glass

We present an experimental study of the energy-relaxation in Anderson-insulating indium-oxide films excited far from equilibrium. In particular, we focus on the effects of history on the relaxation of the excess conductance dG. The natural relaxation law of dG is logarithmic, namely dG=-log(t). This may be observed over more than five decades following, for example, cool-quenching the sample from high temperatures. On the other hand, when the system is excited from a state S_{o} in which it has not fully reached equilibrium to a state S_{n}, the ensuing relaxation law is logarithmic only over time t shorter than the time t_{w} it spent in S_{o}. For times t>t_{w} dG(t) show systematic deviation from the logarithmic dependence. It was previously shown that when the energy imparted to the system in the excitation process is small, this leads to dG=P(t/t_{w}) (simple-aging). Here we test the conjecture that `simple-aging' is related to a symmetry in the relaxation dynamics in S_{o} and S_{n}. This is done by using a new experimental procedure that is more sensitive to deviations in the relaxation dynamics. It is shown that simple-aging may still be obeyed (albeit with a modified P(t/t_{w})) even when the symmetry of relaxation in S_{o} and S_{n} is perturbed by a certain degree. The implications of these findings to the question of aging, and the energy scale associated with correlations are discussed