136 research outputs found
Surface nanoscale axial photonics structures introduced by bending of optical fibers
The new manufacturing method for fabrication of Surface Nanoscale Axial Photonics (SNAP) structures has been developed. We showed experimentally that the bent fiber can achieve the nanometer-scale variation in the effective fiber radius sufficient for fabrication of SNAP microresonators. The advantage of the demonstrated method is in its simplicity, robustness, and mechanical tunability of the fabricated devices
Production of the short-lived radionuclides for positron-emission tomography: cyclotron or linear electron accelerator
Analysis of the methods of the short-lived positron emitting radionuclides production on linear electron accelerators for positron-emission tomography (PET) was performed. Methods of extraction of short-lived isotopes from the
irradiated samples are considered. It is shown that specific activity of radionuclides produced on linear electron accelerators is sufficient for the gamma-camera and PET diagnostic.ΠΡΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Π°Π½Π°Π»ΡΠ· ΠΌΠ΅ΡΠΎΠ΄ΡΠ² Π½Π°ΠΏΡΠ°ΡΡΠ²Π°Π½Π½Ρ Π½Π΅Π΄ΠΎΠ²Π³ΠΎΠΆΠΈΠ²ΡΡΠΈΡ
ΡΠ°Π΄ΡΠΎΠ½ΡΠΊΠ»ΡΠ΄ΡΠ² Π½Π° Π»ΡΠ½ΡΠΉΠ½ΠΈΡ
ΠΏΡΠΈΡΠΊΠΎΡΡΠ²Π°ΡΠ°Ρ
Π΅Π»Π΅ΠΊΡΡΠΎΠ½ΡΠ² Π΄Π»Ρ ΠΏΠΎΠ·ΠΈΡΡΠΎΠ½Π½ΠΎΡ Π΅ΠΌΡΡΡΠΉΠ½ΠΎΡ ΡΠΎΠΌΠΎΠ³ΡΠ°ΡΡΡ. Π ΠΎΠ·Π³Π»ΡΠ½ΡΡΠΎ ΠΌΠ΅ΡΠΎΠ΄ΠΈ Π·Π΄ΠΎΠ±ΡΠ²Π°Π½Π½Ρ Π½Π΅Π΄ΠΎΠ²Π³ΠΎΠΆΠΈΠ²ΡΡΠΈΡ
ΡΠ·ΠΎΡΠΎΠΏΡΠ² ΡΠ·
ΠΎΠΏΡΠΎΠΌΡΠ½Π΅Π½ΠΈΡ
Π·ΡΠ°Π·ΠΊΡΠ². ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΠΎ ΠΏΠΈΡΠΎΠΌΠ° Π°ΠΊΡΠΈΠ²Π½ΡΡΡΡ ΡΠ°Π΄ΡΠΎΠ½ΡΠΊΠ»ΡΠ΄ΡΠ², ΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ
Π½Π° Π»ΡΠ½ΡΠΉΠ½ΠΈΡ
ΠΏΡΠΈΡΠΊΠΎΡΡΠ²Π°ΡΠ°Ρ
Π΅Π»Π΅ΠΊΡΡΠΎΠ½ΡΠ², ΠΌΠΎΠΆΠ΅ Π±ΡΡΠΈ Π΄ΠΎΡΡΠ°ΡΠ½ΡΠΎΡ Π΄Π»Ρ Π΄ΡΠ°Π³Π½ΠΎΡΡΠΈΠΊΠΈ Π½Π° Π³Π°ΠΌΠΌΠ°-ΠΊΠ°ΠΌΠ΅ΡΠ°Ρ
ΡΠ° Π΄Π»Ρ ΠΏΠΎΠ·ΠΈΡΡΠΎΠ½Π½ΠΎΡ Π΅ΠΌΡΡΡΠΉΠ½ΠΎΡ ΡΠΎΠΌΠΎΠ³ΡΠ°ΡΡΡ.ΠΡΠΎΠ²Π΅Π΄Π΅Π½ Π°Π½Π°Π»ΠΈΠ· ΠΌΠ΅ΡΠΎΠ΄ΠΎΠ² Π½Π°ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΊΠΎΡΠΎΡΠΊΠΎΠΆΠΈΠ²ΡΡΠΈΡ
ΡΠ°Π΄ΠΈΠΎΠ½ΡΠΊΠ»ΠΈΠ΄ΠΎΠ² Π½Π° Π»ΠΈΠ½Π΅ΠΉΠ½ΡΡ
ΡΡΠΊΠΎΡΠΈΡΠ΅Π»ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Π΄Π»Ρ ΠΏΠΎΠ·ΠΈΡΡΠΎΠ½Π½ΠΎΠΉ ΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΠΎΠΉ ΡΠΎΠΌΠΎΠ³ΡΠ°ΡΠΈΠΈ. Π Π°ΡΡΠΌΠΎΡΡΠ΅Π½Ρ ΠΌΠ΅ΡΠΎΠ΄Ρ ΠΈΠ·Π²Π»Π΅ΡΠ΅Π½ΠΈΡ ΠΊΠΎΡΠΎΡΠΊΠΎΠΆΠΈΠ²ΡΡΠΈΡ
ΠΈΠ·ΠΎΡΠΎΠΏΠΎΠ² ΠΈΠ· ΠΎΠ±Π»ΡΡΠ΅Π½Π½ΡΡ
ΠΎΠ±ΡΠ°Π·ΡΠΎΠ². ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΡΠ΄Π΅Π»ΡΠ½Π°Ρ Π°ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΡΠ°Π΄ΠΈΠΎΠ½ΡΠΊΠ»ΠΈΠ΄ΠΎΠ², ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
Π½Π° Π»ΠΈΠ½Π΅ΠΉΠ½ΡΡ
ΡΡΠΊΠΎΡΠΈΡΠ΅Π»ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ², ΠΌΠΎΠΆΠ΅Ρ Π±ΡΡΡ Π΄ΠΎΡΡΠ°ΡΠΎΡΠ½ΠΎΠΉ Π΄Π»Ρ Π΄ΠΈΠ°Π³Π½ΠΎΡΡΠΈΠΊΠΈ Π½Π° Π³Π°ΠΌΠΌΠ°-ΠΊΠ°ΠΌΠ΅ΡΠ°Ρ
ΠΈ Π΄Π»Ρ ΠΏΠΎΠ·ΠΈΡΡΠΎΠ½Π½ΠΎΠΉ ΡΠΌΠΈΡΡΠΈΠΎΠ½Π½ΠΎΠΉ ΡΠΎΠΌΠΎΠ³ΡΠ°ΡΠΈΠΈ
1.2 GeV electron radiation spectra in thick tungsten single crystals and total radiation losses in tungsten, germanium and silicon single crystals
The experimental investigation of radiation energy losses of ultra relativistic electrons in aligned crystals of various atomic number are of great interest for several reasonye
Intensive X-ray source optimization
Possibility of optimization of an intensive source of the electron radiation in crystals based on the Compton
scattering of X-radiation is considered.Π ΠΎΠ·Π³Π»ΡΠ΄Π°ΡΡΡΡΡ ΠΌΠΎΠΆΠ»ΠΈΠ²ΡΡΡΡ ΠΎΠΏΡΠΈΠΌΡΠ·Π°ΡΡΡ Π΄ΠΆΠ΅ΡΠ΅Π» ΡΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠ΅Π½ΡΠ³Π΅Π½ΡΠ²ΡΡΠΊΠΎΠ³ΠΎ Π²ΠΈΠΏΡΠΎΠΌΡΠ½ΡΠ²Π°Π½Π½Ρ
ΠΏΡΠΈΡΠΊΠΎΡΠ΅Π½ΠΈΡ
Π΅Π»Π΅ΠΊΡΡΠΎΠ½ΡΠ² Π· Π²ΠΈΠΊΠΎΡΠΈΡΡΠ°Π½Π½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠΈ Π½Π° ΠΎΡΠ½ΠΎΠ²Ρ ΠΊΠΎΠΌΠΏΡΠΎΠ½ΡΠ²ΡΡΠΊΠΎΠ³ΠΎ ΡΠΎΠ·ΡΡΡΠ½Π½Ρ.Π Π°ΡΡΠΌΠ°ΡΡΠΈΠ²Π°Π΅ΡΡΡ Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΎΠΏΡΠΈΠΌΠΈΠ·Π°ΡΠΈΠΈ ΠΈΡΡΠΎΡΠ½ΠΈΠΊΠΎΠ² ΠΈΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΡΠ΅Π½ΡΠ³Π΅Π½ΠΎΠ²ΡΠΊΠΎΠ³ΠΎ ΠΈΠ·Π»ΡΡΠ΅Π½ΠΈΡ
ΡΡΠΊΠΎΡΠ΅Π½Π½ΡΡ
ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΠ΅ΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠΈ Π½Π° ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΠΎΠΌΠΏΡΠΎΠ½ΠΎΠ²ΡΠΊΠΎΠ³ΠΎ ΡΠ°ΡΡΠ΅ΡΠ½ΠΈΡ
Orientation effects in ultrarelativistic electron transmission through a single crystal
The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown
Photonuclear transmutation doping of the n-type detector silicon
New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons
Silicon pad detectors for a simple tracking system and multiplicity detectors creation
Silicon pad detectors are working at room temperatures, what is very convenient for creation of simple tracking system and multiplicity detectors. Silicon pad detectors are studied to create a compact detecting systems for active beam collimation and for gamma-radiation multiplicity measurements. The registration efficiency and spectral distributions of gamma-radiation and electrons were studied using isotope radiation sources. The silicon pad detectors were designed at NSC "KIPT"
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