136 research outputs found

    Surface nanoscale axial photonics structures introduced by bending of optical fibers

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    The new manufacturing method for fabrication of Surface Nanoscale Axial Photonics (SNAP) structures has been developed. We showed experimentally that the bent fiber can achieve the nanometer-scale variation in the effective fiber radius sufficient for fabrication of SNAP microresonators. The advantage of the demonstrated method is in its simplicity, robustness, and mechanical tunability of the fabricated devices

    Production of the short-lived radionuclides for positron-emission tomography: cyclotron or linear electron accelerator

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    Analysis of the methods of the short-lived positron emitting radionuclides production on linear electron accelerators for positron-emission tomography (PET) was performed. Methods of extraction of short-lived isotopes from the irradiated samples are considered. It is shown that specific activity of radionuclides produced on linear electron accelerators is sufficient for the gamma-camera and PET diagnostic.ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ΠΎ Π°Π½Π°Π»Ρ–Π· ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ–Π² Π½Π°ΠΏΡ€Π°Ρ†ΡŽΠ²Π°Π½Π½Ρ Π½Π΅Π΄ΠΎΠ²Π³ΠΎΠΆΠΈΠ²ΡƒΡ‡ΠΈΡ… Ρ€Π°Π΄Ρ–ΠΎΠ½ΡƒΠΊΠ»Ρ–Π΄Ρ–Π² Π½Π° Π»Ρ–Π½Ρ–ΠΉΠ½ΠΈΡ… ΠΏΡ€ΠΈΡΠΊΠΎΡ€ΡŽΠ²Π°Ρ‡Π°Ρ… Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² для ΠΏΠΎΠ·ΠΈΡ‚Ρ€ΠΎΠ½Π½ΠΎΡ— Смісійної Ρ‚ΠΎΠΌΠΎΠ³Ρ€Π°Ρ„Ρ–Ρ—. Розглянуто ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈ здобування Π½Π΅Π΄ΠΎΠ²Π³ΠΎΠΆΠΈΠ²ΡƒΡ‡ΠΈΡ… Ρ–Π·ΠΎΡ‚ΠΎΠΏΡ–Π² Ρ–Π· ΠΎΠΏΡ€ΠΎΠΌΡ–Π½Π΅Π½ΠΈΡ… Π·Ρ€Π°Π·ΠΊΡ–Π². Показано, Ρ‰ΠΎ ΠΏΠΈΡ‚ΠΎΠΌΠ° Π°ΠΊΡ‚ΠΈΠ²Π½Ρ–ΡΡ‚ΡŒ Ρ€Π°Π΄Ρ–ΠΎΠ½ΡƒΠΊΠ»Ρ–Π΄Ρ–Π², ΠΎΠ΄Π΅Ρ€ΠΆΠ°Π½ΠΈΡ… Π½Π° Π»Ρ–Π½Ρ–ΠΉΠ½ΠΈΡ… ΠΏΡ€ΠΈΡΠΊΠΎΡ€ΡŽΠ²Π°Ρ‡Π°Ρ… Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π², ΠΌΠΎΠΆΠ΅ Π±ΡƒΡ‚ΠΈ Π΄ΠΎΡΡ‚Π°Ρ‚Π½ΡŒΠΎΡŽ для діагностики Π½Π° Π³Π°ΠΌΠΌΠ°-ΠΊΠ°ΠΌΠ΅Ρ€Π°Ρ… Ρ‚Π° для ΠΏΠΎΠ·ΠΈΡ‚Ρ€ΠΎΠ½Π½ΠΎΡ— Смісійної Ρ‚ΠΎΠΌΠΎΠ³Ρ€Π°Ρ„Ρ–Ρ—.ΠŸΡ€ΠΎΠ²Π΅Π΄Π΅Π½ Π°Π½Π°Π»ΠΈΠ· ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΎΠ² Π½Π°Ρ€Π°Π±ΠΎΡ‚ΠΊΠΈ ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠΆΠΈΠ²ΡƒΡ‰ΠΈΡ… Ρ€Π°Π΄ΠΈΠΎΠ½ΡƒΠΊΠ»ΠΈΠ΄ΠΎΠ² Π½Π° Π»ΠΈΠ½Π΅ΠΉΠ½Ρ‹Ρ… ускоритСлях элСктронов для ΠΏΠΎΠ·ΠΈΡ‚Ρ€ΠΎΠ½Π½ΠΎΠΉ эмиссионной Ρ‚ΠΎΠΌΠΎΠ³Ρ€Π°Ρ„ΠΈΠΈ. РассмотрСны ΠΌΠ΅Ρ‚ΠΎΠ΄Ρ‹ извлСчСния ΠΊΠΎΡ€ΠΎΡ‚ΠΊΠΎΠΆΠΈΠ²ΡƒΡ‰ΠΈΡ… ΠΈΠ·ΠΎΡ‚ΠΎΠΏΠΎΠ² ΠΈΠ· ΠΎΠ±Π»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… ΠΎΠ±Ρ€Π°Π·Ρ†ΠΎΠ². Показано, Ρ‡Ρ‚ΠΎ ΡƒΠ΄Π΅Π»ΡŒΠ½Π°Ρ Π°ΠΊΡ‚ΠΈΠ²Π½ΠΎΡΡ‚ΡŒ Ρ€Π°Π΄ΠΈΠΎΠ½ΡƒΠΊΠ»ΠΈΠ΄ΠΎΠ², ΠΏΠΎΠ»ΡƒΡ‡Π΅Π½Π½Ρ‹Ρ… Π½Π° Π»ΠΈΠ½Π΅ΠΉΠ½Ρ‹Ρ… ускоритСлях элСктронов, ΠΌΠΎΠΆΠ΅Ρ‚ Π±Ρ‹Ρ‚ΡŒ достаточной для диагностики Π½Π° Π³Π°ΠΌΠΌΠ°-ΠΊΠ°ΠΌΠ΅Ρ€Π°Ρ… ΠΈ для ΠΏΠΎΠ·ΠΈΡ‚Ρ€ΠΎΠ½Π½ΠΎΠΉ эмиссионной Ρ‚ΠΎΠΌΠΎΠ³Ρ€Π°Ρ„ΠΈΠΈ

    1.2 GeV electron radiation spectra in thick tungsten single crystals and total radiation losses in tungsten, germanium and silicon single crystals

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    The experimental investigation of radiation energy losses of ultra relativistic electrons in aligned crystals of various atomic number are of great interest for several reasonye

    Intensive X-ray source optimization

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    Possibility of optimization of an intensive source of the electron radiation in crystals based on the Compton scattering of X-radiation is considered.Π ΠΎΠ·Π³Π»ΡΠ΄Π°Ρ”Ρ‚ΡŒΡΡ ΠΌΠΎΠΆΠ»ΠΈΠ²Ρ–ΡΡ‚ΡŒ ΠΎΠΏΡ‚ΠΈΠΌΡ–Π·Π°Ρ†Ρ–Ρ— Π΄ΠΆΠ΅Ρ€Π΅Π» інтСнсивного Ρ€Π΅Π½Ρ‚Π³Π΅Π½Ρ–Π²ΡΡŒΠΊΠΎΠ³ΠΎ Π²ΠΈΠΏΡ€ΠΎΠΌΡ–Π½ΡŽΠ²Π°Π½Π½Ρ прискорСних Π΅Π»Π΅ΠΊΡ‚Ρ€ΠΎΠ½Ρ–Π² Π· використанням ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ Π½Π° основі ΠΊΠΎΠΌΠΏΡ‚ΠΎΠ½Ρ–Π²ΡΡŒΠΊΠΎΠ³ΠΎ розсіяння.РассматриваСтся Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡ‚ΡŒ ΠΎΠΏΡ‚ΠΈΠΌΠΈΠ·Π°Ρ†ΠΈΠΈ источников интСнсивного рСнтгСновского излучСния ускорСнных элСктронов с использованиСм ΠΌΠ΅Ρ‚ΠΎΠ΄ΠΈΠΊΠΈ Π½Π° основС комптоновского рассСяния

    Orientation effects in ultrarelativistic electron transmission through a single crystal

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    The results of experimental investigations of the 1.2 GeV electron transmission dynamics in a thin single crystal of Si are discussed. The interpretation of the electron scattering orientation dependencies measured under different scattering angles is carried out. The existence of scattering direction, where one can observe the scattering intensity independence on the crystallographic plane orientation is shown. Besides the existence of crystallographic axis orientation, where one can observe the region of uniform angle distribution of scattering intensity, is shown

    Photonuclear transmutation doping of the n-type detector silicon

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    New experimental quantitative data on the efficiency of photonuclear transmutation doping of n-type detector silicon were obtained. The express technique for measurement of the efficiency of producing the acceptor minority (Al) in high resistant detector silicon was developed. The transmutation doping is studied for increase of the detector silicon resistivity from about 1 to 5 kOhm x cm and for correction of the resistivity distribution over the silicon bulk. The studies of photonuclear doping were performed applying the beams of gamma-bremsstrahlung with Egmax ~ 25 MeV. Using the doping efficiency data, the cost of detector silicon doping was calculated for case of the bremsstrahlung of 25 MeV energy electrons

    Silicon pad detectors for a simple tracking system and multiplicity detectors creation

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    Silicon pad detectors are working at room temperatures, what is very convenient for creation of simple tracking system and multiplicity detectors. Silicon pad detectors are studied to create a compact detecting systems for active beam collimation and for gamma-radiation multiplicity measurements. The registration efficiency and spectral distributions of gamma-radiation and electrons were studied using isotope radiation sources. The silicon pad detectors were designed at NSC "KIPT"
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