A Novel Error Rate Estimation Approach for UltraScale+ SRAM-based FPGAs

SRAM-based FPGA devices manufactured in FinFET technologies provide performances and characteristics suitable for avionics and aerospace applications. The estimation of error rate sensitivity to harsh environments is a major concern for enabling their usage on such application fields. In this paper, we propose a new estimation approach able to consider the radiation effects on the configuration memory and logic layer of FPGAs, providing a comprehensive Application Error Rate probability estimation. Experimental results provide a comparison between radiation test campaigns, which demonstrates the feasibility of the proposed solution

Ultrahigh energy heavy ion test beam on Xilinx Kintex-7 SRAM-based FPGA

In recent years, field-programmable gate array (FPGA) devices have attracted a lot of attentions due to the increasing performance they provide thanks to technology scaling, besides their high flexibility through in-field reprogramming and/or partial reconfiguration capability. However, when such devices are to be deployed in safety- and mission-critical applications such as avionic and space applications, it is mandatory to verify the reliability of the device in the target environment where radiation effect is considered as one of the major sources of faults in the system. For static random access memory (SRAM)-based FPGA devices, the SRAM cells holding the configuration data for the circuit implemented on the devices are highly susceptible against single-event upset (SEU) induced by charged particle striking the device and one single SEU in the configuration memory may corrupt the implemented circuit design causing system misbehavior. In this paper, we present the radiation test data on Xilinx Kintex-7 SRAM-based FPGA using ultrahigh energy heavy-ion test beam for the first time available to third-party radiation test in CERN

Mechanisms of Electron-Induced Single Event Latchup

In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.peerReviewe

Configuration Memory Scrubbing of SRAM-Based FPGAs Using a Mixed 2-D Coding Technique

SRAM-based field-programmable gate array (FPGA) vendors typically integrate error correction codes (ECCs) into the configuration memory to assist designers in implementing scrubbing mechanisms. In most cases, these ECC schemes guarantee the correction of single- and double-bit errors per configuration frame but fail to correct upsets with higher multiplicity in a single frame caused by a single event. This phenomenon has been observed in modern commercial-off-the-shelf FPGAs. Bit interleaving schemes are used in some FPGA families to scatter the multiple upsets into more than one frame, but this does not fully resolve the problem of uncorrectable errors. In this article, we propose a configuration memory scrubbing approach for SRAM-based FPGA devices, which combines the embedded ECC logic with an interframe, interleaved parity code to build a mixed 2-D coding technique. The proposed technique improves the multiple-bit error correction capabilities of the on-chip ECC scheme while keeping the error correction latency and hardware cost low. The scrubbing concept has been validated under heavy-ion irradiation, where it succeeded in correcting all the single and multiple upsets observed during the radiation experiment

Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs

In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying energies and intensities to omit other possible effects