47 research outputs found
From Household Size to the Life Course
Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/66696/2/10.1177_000276427702100207.pd
A retrospective study of long-term treatment outcomes for reduced vocal intensity in hypokinetic dysarthria
Como continuaram os processos civilizadores: rumo a uma informalização dos comportamentos e a uma personalidade de terceira natureza
Comparative Treatment Outcomes for Patients With Idiopathic Subglottic Stenosis.
To access publisher's full text version of this article, please click on the hyperlink in Additional Links field or click on the hyperlink at the top of the page marked DownloadImportance: Surgical treatment comparisons in rare diseases are difficult secondary to the geographic distribution of patients. Fortunately, emerging technologies offer promise to reduce these barriers for research.
Objective: To prospectively compare the outcomes of the 3 most common surgical approaches for idiopathic subglottic stenosis (iSGS), a rare airway disease.
Design, setting, and participants: In this international, prospective, 3-year multicenter cohort study, 810 patients with untreated, newly diagnosed, or previously treated iSGS were enrolled after undergoing a surgical procedure (endoscopic dilation [ED], endoscopic resection with adjuvant medical therapy [ERMT], or cricotracheal resection [CTR]). Patients were recruited from clinician practices in the North American Airway Collaborative and an online iSGS community on Facebook.
Main outcomes and measures: The primary end point was days from initial surgical procedure to recurrent surgical procedure. Secondary end points included quality of life using the Clinical COPD (chronic obstructive pulmonary disease) Questionnaire (CCQ), Voice Handicap Index-10 (VHI-10), Eating Assessment Test-10 (EAT-10), the 12-Item Short-Form Version 2 (SF-12v2), and postoperative complications.
Results: Of 810 patients in this cohort, 798 (98.5%) were female and 787 (97.2%) were white, with a median age of 50 years (interquartile range, 43-58 years). Index surgical procedures were ED (n = 603; 74.4%), ERMT (n = 121; 14.9%), and CTR (n = 86; 10.6%). Overall, 185 patients (22.8%) had a recurrent surgical procedure during the 3-year study, but recurrence differed by modality (CTR, 1 patient [1.2%]; ERMT, 15 [12.4%]; and ED, 169 [28.0%]). Weighted, propensity score-matched, Cox proportional hazards regression models showed ED was inferior to ERMT (hazard ratio [HR], 3.16; 95% CI, 1.8-5.5). Among successfully treated patients without recurrence, those treated with CTR had the best CCQ (0.75 points) and SF-12v2 (54 points) scores and worst VHI-10 score (13 points) 360 days after enrollment as well as the greatest perioperative risk.
Conclusions and relevance: In this cohort study of 810 patients with iSGS, endoscopic dilation, the most popular surgical approach for iSGS, was associated with a higher recurrence rate compared with other procedures. Cricotracheal resection offered the most durable results but showed the greatest perioperative risk and the worst long-term voice outcomes. Endoscopic resection with medical therapy was associated with better disease control compared with ED and had minimal association with vocal function. These results may be used to inform individual patient treatment decision-making.Patient-Centered Outcomes Research Institute - PCOR
Erratum: Direct observation of single-charge-detection capability of nanowire field-effect transistors
Probing the Gate-Voltage-Dependent Surface Potential of Individual InAs Nanowires Using Random Telegraph Signals RID C-6303-2008
We report a novel methocl for probing the gate-voltage dependence of the surface potential of individual semiconductor nanowires. The statistics of electronic occupation of a single defect on the surface of the nanowire, determined from a random telegraph signal, is used as a. measure for the local potential. The method, is demonstrated for the case of one or two switching defects in indium arsenide (InAs) nanowire field effect transistors at temperatures T = 25-77 K. Comparison with a self consistent model shows that surface potential variation is retarded In the conducting regime due to screening by surface states with density D(ss) approximate to 10(12) cm(-2) ev(-1). Temperature-dependent dynamics of, electron capture and emission producing the random telegraph signals are also analyzed, and multiphonon emission is identified as the process responsible for capture and emission of electrons from the surface traps. Two defects studied in detail had capture activation energies of E(B) approximate to 50 meV and E(B) approximate to 110 meV and cross sections of sigma(infinity) approximate to 3 x 10(-19) cm(2) and sigma(infinity) approximate to 2 x 10(-17) cm(2), respectively. A lattice relaxation energy of s (h) over bar omega = 187 +/- 15 meV was found for the first defect
Quantum dot saturable absorber for passive mode-locking of Nd:YVO4 lasers at 1064 nm
NRC publication: Ye
Serum Immunoglobulin G Analysis to Establish a Delayed Diagnosis of Chronic Cough due to Bordetella pertussis
Mapping the Coulomb Environment in Interference-Quenched Ballistic Nanowires
The
conductance of semiconductor nanowires is strongly dependent
on their electrostatic history because of the overwhelming influence
of charged surface and interface states on electron confinement and
scattering. We show that InAs nanowire field-effect transistor devices
can be conditioned to suppress resonances that obscure quantized conduction
thereby revealing as many as six sub-bands in the conductance spectra
as the Fermi-level is swept across the sub-band energies. The energy
level spectra extracted from conductance, coupled with detailed modeling
shows the significance of the interface state charge distribution
revealing the Coulomb landscape of the nanowire device. Inclusion
of self-consistent Coulomb potentials, the measured geometrical shape
of the nanowire, the gate geometry and nonparabolicity of the conduction
band provide a quantitative and accurate description of the confinement
potential and resulting energy level structure. Surfaces of the nanowire
terminated by HfO<sub>2</sub> are shown to have their interface donor
density reduced by a factor of 30 signifying the passivating role
played by HfO<sub>2</sub>