1,404 research outputs found
Uncertainty reconciles complementarity with joint measurability
The fundamental principles of complementarity and uncertainty are shown to be
related to the possibility of joint unsharp measurements of pairs of
noncommuting quantum observables. A new joint measurement scheme for
complementary observables is proposed. The measured observables are represented
as positive operator valued measures (POVMs), whose intrinsic fuzziness
parameters are found to satisfy an intriguing pay-off relation reflecting the
complementarity. At the same time, this relation represents an instance of a
Heisenberg uncertainty relation for measurement imprecisions. A
model-independent consideration show that this uncertainty relation is
logically connected with the joint measurability of the POVMs in question.Comment: 4 pages, RevTeX. Title of previous version: "Complementarity and
uncertainty - entangled in joint path-interference measurements". This new
version focuses on the "measurement uncertainty relation" and its role,
disentangling this issue from the special context of path interference
duality. See also http://www.vjquantuminfo.org (October 2003
Theoretical Uncertainties in Red Giant Branch Evolution: The Red Giant Branch Bump
A Monte Carlo simulation exploring uncertainties in standard stellar
evolution theory on the red giant branch of metal-poor globular clusters has
been conducted. Confidence limits are derived on the absolute V-band magnitude
of the bump in the red giant branch luminosity function (M_v,b) and the excess
number of stars in thebump, R_b. The analysis takes into account uncertainties
in the primordial helium abundance, abundance of alpha-capture elements,
radiative and conductive opacities, nuclear reaction rates, neutrino energy
losses, the treatments of diffusion and convection, the surface boundary
conditions, and color transformations.
The uncertainty in theoretical values for the red giant bump magnitude varies
with metallicity between +0.13/-0.12 mag at [Fe/H] = -2.4 and +0.23/-0.21 mag
at [Fe/H] = -1.0 to 0.50 at [Fe/H] =
-1.0. These theoretical values for R_b are in agreement with observations.Comment: 30 pages, 6 figures. To appear in Ap
Quantum metrology at the limit with extremal Majorana constellations
Quantum metrology allows for a tremendous boost in the accuracy of measurement of diverse physical parameters. The estimation of a rotation constitutes a remarkable example of this quantum-enhanced precision. The recently introduced Kings of Quantumness are especially germane for this task when the rotation axis is unknown, as they have a sensitivity independent of that axis and they achieve a Heisenberg-limit scaling. Here, we report the experimental realization of these states by generating up to 21-dimensional orbital angular momentum states of single photons, and confirm their high metrological abilities
Association between Antibodies to the MR 67,000 Isoform of Glutamate Decarboxylase (GAD) and Type 1 (Insulin-Dependent) Diabetes Mellitus with Coexisting Autoimmune Polyendocrine Syndrome Type II
By using an immunoprecipitation assay, we analysed reactivity of autoantibodies to human recombinant GAD65 and GAD67 in sera from patients with autoimmune polyendocrine syndrome Type II (APS II) with and without Type 1 (insulin-dependent) diabetes mellitus (IDDM) compared to patients with organ-specific autoimmunity. Overall antibodies to GAD65 were correlated with IDDM in all study groups, whereas GAD67 antibodies were associated with IDDM when APS II coexists. Antibodies to GAD65 and GAD67 were detected in 13 (44.8%) and 7 (24.1%) out of 29 APS II patients with IDDM, but in only 4 (13.8%) and 2 (6.9%) out of 29 APS II patients without IDDM, respectively (p < 0.05). In short-standing IDDM (< 1 year), antibodies to GAD67 were significantly more frequent in patients with APS II (5 of 9 [55.6%] subjects) compared to matched diabetic patients without coexisting polyendocrinopathy (1 of 18 [5.6%] subjects) (p < 0.02). The levels of GAD65 (142 ± 90 AU) and GAD67 antibodies (178 ± 95 AU) were significantly higher in patients with polyglandular disease than in patients with isolated IDDM (91 ± 85 AU and 93 ± 57 AU) (p < 0.02). Interestingly, all 11 GAD67 antibody positive subjects also had GAD65 antibodies (p < 0.0001), and in 10 of 11 anti-GAD67 positive sera the GAD67 antibodies could be blocked by either GAD67 or GAD65, suggesting the presence of cross-reactive autoantibodies. No correlation was observed between GAD antibodies and age, sex or any particular associated autoimmune disease, besides IDDM. GAD antibodies were present in only 1 of 6 (16.7%) patients with APS Type I, in 1 of 26 (3.9%) patients with autoimmune thyroid disease but in none of the patients with Addison's disease (n = 16), pernicious anaemia (n = 7) or normal controls (n = 50). Our data suggest distinct antibody specificities reactive to GAD isoforms in APS II and IDDM, which might reflect different mechanisms of autoimmune response in IDDM with coexisting autoimmune polyendocrine autoimmunity
GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions
GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by
molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs
phase separation. Their density is proportional to the density of catalyzing
MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate
temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the
nanowires combine one-dimensional properties with the magnetic properties of
(Ga,Mn)As and provide natural, self assembled structures for nanospintronics.Comment: 13 pages, 6 figure
Single donor ionization energies in a nanoscale CMOS channel
One consequence of the continued downwards scaling of transistors is the
reliance on only a few discrete atoms to dope the channel, and random
fluctuations of the number of these dopants is already a major issue in the
microelectonics industry. While single-dopant signatures have been observed at
low temperature, studying the impact of only one dopant up to room temperature
requires extremely small lengths. Here, we show that a single arsenic dopant
dramatically affects the off-state behavior of an advanced microelectronics
field effect transistor (FET) at room temperature. Furthermore, the ionization
energy of this dopant should be profoundly modified by the close proximity of
materials with a different dielectric constant than the host semiconductor. We
measure a strong enhancement, from 54meV to 108meV, of the ionization energy of
an arsenic atom located near the buried oxide. This enhancement is responsible
for the large current below threshold at room temperature and therefore
explains the large variability in these ultra-scaled transistors. The results
also suggest a path to incorporating quantum functionalities into silicon CMOS
devices through manipulation of single donor orbitals
The interaction in nuclear matter from a study of the reactions
The pion-production reactions were studied on
, , , and nuclei at an incident pion energy
of =283 MeV. Pions were detected in coincidence using the CHAOS
spectrometer. The experimental results are reduced to differential cross
sections and compared to both theoretical predictions and the reaction phase
space. The composite ratio between the
invariant masses on nuclei and on the nucleon is also presented. Near the
threshold pion pairs couple to when produced in
the reaction channel. There is a marked near-threshold
enhancement of which is consistent with theoretical
predictions addressing the partial restoration of chiral symmetry in nuclear
matter. Furthermore, the behaviour of is well
described when the restoration of chiral symmetry is combined with standard
P-wave renormalization of pions in nuclear matter. On the other hand, nuclear
matter only weakly influences , which displays a flat
behaviour throughout the energy range regardless of .Comment: 30 pages, 16 figures, PS format, accepted for publication in Nucl.
Phys
Nonresonant enhancement of spontaneous emission in metal-dielectric-metal plasmon waveguide structures
We theoretically investigate the spontaneous emission process of an optical, dipolar emitter in metal-dielectric-metal slab and slot waveguide structures. We find that both structures exhibit strong emission enhancements at nonresonant conditions, due to the tight confinement of modes between two metallic plates. The large enhancement of surface plasmon-polariton excitation enables dipole emission to be preferentially coupled into plasmon waveguide modes. These structures find applications in creating nanoscale local light sources or in generating guided single plasmons in integrated optical circuitsclose849
Nanoscale spin rectifiers controlled by the Stark effect
The control of orbital and spin state of single electrons is a key ingredient
for quantum information processing, novel detection schemes, and, more
generally, is of much relevance for spintronics. Coulomb and spin blockade (SB)
in double quantum dots (DQDs) enable advanced single-spin operations that would
be available even for room-temperature applications for sufficiently small
devices. To date, however, spin operations in DQDs were observed at sub-Kelvin
temperatures, a key reason being that scaling a DQD system while retaining an
independent field-effect control on the individual dots is very challenging.
Here we show that quantum-confined Stark effect allows an independent
addressing of two dots only 5 nm apart with no need for aligned nanometer-size
local gating. We thus demonstrate a scalable method to fully control a DQD
device, regardless of its physical size. In the present implementation we show
InAs/InP nanowire (NW) DQDs that display an experimentally detectable SB up to
10 K. We also report and discuss an unexpected re-entrant SB lifting as a
function magnetic-field intensity
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