Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors.Comment: 8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.Comment: 9 pages, 5 figures, submitted to Nuclear Instruments and Methods

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed.Comment: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.Comment: 15 pages, 11 figures, submitted to Nuclear Instruments and Methods

Tracking and Vertexing with a Thin CMOS Pixel Beam Telescope

We present results of a study of charged particle track and vertex reconstruction with a beam telescope made of four layers of 50 micron-thin CMOS monolithic pixel sensors using the 120 GeV protons at the FNAL Meson Test Beam Facility. We compare our results to the performance requirements of a future e+e- linear collider in terms of particle track extrapolation and vertex reconstruction accuracies.Comment: 9 pages, 7 figures submitted to Nuclear Instruments and Methods

Radiation Testing of Glast LAT Tracker Asics

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ILC Vertex Tracker R&D

This document summarizes past achievements, current activities and future goals of the R&D program aimed at the design, prototyping and characterization of a full detector module, equipped with monolithic pixel sensors, matching the requirements for the Vertex Tracker at the ILC. We provide a plan of activities to obtain a demonstrator multi-layered vertex tracker equipped with sensors matching the ILC requirements and realistic lightweight ladders in FY11, under the assumption that ILC detector proto-collaborations will be choosing technologies and designs for the Vertex Tracker by that time. The R&D program discussed here started at LBNL in 2004, supported by a Laboratory Directed R&D (LDRD) grant and by funding allocated from the core budget of the LBNL Physics Division and from the Department of Physics at UC Berkeley. Subsequently additional funding has been awarded under the NSF-DOE LCRD program and also personnel have become available through collaborative research with other groups. The aim of the R&D program carried out by our collaboration is to provide a well-integrated, inclusive research effort starting from physics requirements for the ILC Vertex Tracker and addressing Si sensor design and characterization, engineered ladder design, module system issues, tracking and vertex performances and beam test validation. The broad scope of this program is made possible by important synergies with existing know-how and concurrent programs both at LBNL and at the other collaborating institutions. In particular, significant overlaps with LHC detector design, SLHC R&D as well as prototyping for the STAR upgrade have been exploited to optimize the cost per deliverable of our program. This activity is carried out as a collaborative effort together with Accelerator and Fusion Research, the Engineering and the Nuclear Science Divisions at LBNL, INFN and the Department of Physics in Padova, Italy, INFN and the Department of Physics in Torino, Italy and the Department of Physics of Purdue University