Influence of strain on magnetization and magnetoelectric effect in La0.7A0.3MnO3 / PMN-PT(001) (A = Sr; Ca)

We investigate the influence of a well-defined reversible biaxial strain <=0.12 % on the magnetization (M) of epitaxial ferromagnetic manganite films. M has been recorded depending on temperature, strain and magnetic field in 20 - 50 nm thick films. This is accomplished by reversibly compressing the isotropic in-plane lattice parameter of the rhombohedral piezoelectric 0.72PMN-0.28PT (001) substrates by application of an electric field E <= 12 kV cm-1. The magnitude of the total variable in-plane strain has been derived. Strain-induced shifts of the ferromagnetic Curie temperature (Tc) of up to 19 K were found in La0.7Sr0.3MnO3 (LSMO) and La0.7Ca0.3MnO3 films and are quantitatively analysed for LSMO within a cubic model. The observed large magnetoelectric coupling coefficient alpha=mu0 dM/dE <= 6 10-8 s m-1 at ambient temperature results from the strain-induced M change in the magnetic-film-ferroelectric-substrate system. It corresponds to an enhancement of mu0 DeltaM <= 19 mT upon biaxial compression of 0.1 %. The extraordinary large alpha originates from the combination of three crucial properties: (i) the strong strain dependence of M in the ferromagnetic manganites, (ii) large piezo-strain of the PMN-PT substrates and (iii) effective elastic coupling at the film-substrate interface.Comment: 15 pages, 6 figures, 1 tabl

Radiation damage in ZnO ion implanted at 15 K

Commercial O-face (0 0 0 1) ZnO single crystals were implanted with 200 keV Ar ions. The ion fluences applied cover a wide range from 5 x 1011 to 7 x 1016 cm-2. The implantation and the subsequent damage analysis by Rutherford backscattering spectrometry (RBS) in channelling geometry were performed in a special target chamber at 15 K without changing the target temperature of the sample. To analyse the measured channelling spectra the computer code DICADA was used to calculate the relative concentration of displaced lattice atoms. Four stages of the damage evolution can be identified. At low ion fluences up to about 2 x 1013 cm-2 the defect concentration increases nearly linearly with rising fluence (stage I). There are strong indications that only point defects are produced, the absolute concentration of which is reasonably given by SRIM calculations using displacement energies of Ed(Zn) = 65 eV and Ed(O) = 50 eV. In a second stage the defect concentration remains almost constant at a value of about 0.02, which can be interpreted by a balance between production and recombination of point defects. For ion fluences around 5 x 1015 cm-2 a second significant increase of the defect concentration is observed (stage III). Within stage IV at fluences above 1016 cm-2 the defect concentration tends again to saturate at a level of about 0.5 which is well below amorphisation. Within stages III and IV the damage formation is strongly governed by the implanted ions and it is appropriate to conclude that the damage consists of a mixture of point defects and dislocation loops

A model system for strain effects: epitaxial magnetic films on a piezoelectric substrate

75.80.+q Magnetomechanical and magnetoelectric effects, magnetostriction,