Search for Ferromagnetism in doped semiconductors in the absence of transition metal ions

In contrast to semiconductors doped with transition metal magnetic elements, which become ferromagnetic at temperatures below ~ 100K, semiconductors doped with non-magnetic ions (e.g. silicon doped with phosphorous) have not shown evidence of ferromagnetism down to millikelvin temperatures. This is despite the fact that for low densities the system is expected to be well modeled by the Hubbard model, which is predicted to have a ferromagnetic ground state at T=0 on 2- or 3-dimensional bipartite lattices in the limit of strong correlation near half-filling. We examine the impurity band formed by hydrogenic centers in semiconductors at low densities, and show that it is described by a generalized Hubbard model which has, in addition to strong electron-electron interaction and disorder, an intrinsic electron-hole asymmetry. With the help of mean field methods as well as exact diagonalization of clusters around half filling, we can establish the existence of a ferromagnetic ground state, at least on the nanoscale, which is more robust than that found in the standard Hubbard model. This ferromagnetism is most clearly seen in a regime inaccessible to bulk systems, but attainable in quantum dots and 2D heterostructures. We present extensive numerical results for small systems that demonstrate the occurrence of high-spin ground states in both periodic and positionally disordered 2D systems. We consider how properties of real doped semiconductors, such as positional disorder and electron-hole asymmetry, affect the ground state spin of small 2D systems. We also discuss the relationship between this work and diluted magnetic semiconductors, such as Ga_(1-x)Mn_(x)As, which though disordered, show ferromagnetism at relatively high temperatures.Comment: 47 page

Hopping Conduction in Uniaxially Stressed Si:B near the Insulator-Metal Transition

Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in the insulating phase very near the metal-insulator transition. For all values of temperature and stress, the conductivity collapses onto a single universal scaling curve. For large values of the argument, the scaling function is well fit by the exponentially activated form associated with variable range hopping when electron-electron interactions cause a soft Coulomb gap in the density of states at the Fermi energy. The temperature dependence of the prefactor, corresponding to the T-dependence of the critical curve, has been determined reliably for this system, and is proportional to the square-root of T. We show explicitly that nevlecting the prefactor leads to substantial errors in the determination of the scaling parameters and the critical exponents derived from them. The conductivity is not consistent with Mott variable-range hopping in the critical region nor does it obey this form for any range of the parameters. Instead, for smaller argument of the scaling function, the conductivity of Si:B is well fit by an exponential form with exponent 0.31 related to the critical exponents of the system at the metal- insulator transition.Comment: 13 pages, 6 figure

Drainage basin morphometric analysis and its relationship with altitude of Uttarkashi District

The area of investigation lies between Maneri and Gangnani along the Bhagirathi river in the lesser and central Himalayan block of Garhwal Himalayas. The rocks of Garhwal group are represented by quartzites, sericite quartzite’s and talc chlorite schist intruded by metabasics, whereas the Central crystallines are constituted by gneisses, schists, migmatites and amphibolites. For the purpose of drainage basin morphometric analysis 100 third order drainage basins were marked. Drainage basin morphometric parameters of 100 basins were calculated. On the basis of lithology and tectonic setup,the area was divided into three morphogenetic units viz Central crystallines, Thrust zone and Garhwal group. The basins which were situated below 2500 mts are categorized under low altitudes and above 2500 as basins of higher altitudes.The relationship between deainage basinmorphometric parameters and altitude suggest that basins situated at higher altitude have higher value of stream frequency, number of first and second order streams,fine texture and low drainage density

Conductivity of Metallic Si:B near the Metal-Insulator Transition: Comparison between Unstressed and Uniaxially Stressed Samples

The low-temperature dc conductivities of barely metallic samples of p-type Si:B are compared for a series of samples with different dopant concentrations, n, in the absence of stress (cubic symmetry), and for a single sample driven from the metallic into the insulating phase by uniaxial compression, S. For all values of temperature and stress, the conductivity of the stressed sample collapses onto a single universal scaling curve. The scaling fit indicates that the conductivity of si:B is proportional to the square-root of T in the critical range. Our data yield a critical conductivity exponent of 1.6, considerably larger than the value reported in earlier experiments where the transition was crossed by varying the dopant concentration. The larger exponent is based on data in a narrow range of stress near the critical value within which scaling holds. We show explicitly that the temperature dependences of the conductivity of stressed and unstressed Si:B are different, suggesting that a direct comparison of the critical behavior and critical exponents for stress- tuned and concentration-tuned transitions may not be warranted

Infinite disorder scaling of random quantum magnets in three and higher dimensions

Using a very efficient numerical algorithm of the strong disorder renormalization group method we have extended the investigations about the critical behavior of the random transverse-field Ising model in three and four dimensions, as well as for Erd\H os-R\'enyi random graphs, which represent infinite dimensional lattices. In all studied cases an infinite disorder quantum critical point is identified, which ensures that the applied method is asymptotically correct and the calculated critical exponents tend to the exact values for large scales. We have found that the critical exponents are independent of the form of (ferromagnetic) disorder and they vary smoothly with the dimensionality.Comment: 6 pages, 5 figure

Phase Transition in the Three-Dimensional ±J\pm J Ising Spin Glass

We have studied the three-dimensional Ising spin glass with a $\pm J$ distribution by Monte Carlo simulations. Using larger sizes and much better statistics than in earlier work, a finite size scaling analysis shows quite strong evidence for a finite transition temperature, $T_c$, with ordering below $T_c$. Our estimate of the transition temperature is rather lower than in earlier work, and the value of the correlation length exponent, $\nu$, is somewhat higher. Because there may be (unknown) corrections to finite size scaling, we do not completely rule out the possibility that $T_c = 0$ or that $T_c$ is finite but with no order below $T_c$. However, from our data, these possibilities seem less likely.Comment: Postscript file compressed using uufiles. The postscript file is also available by anonymous ftp at ftp://chopin.ucsc.edu/pub/sg3d.p

Bound Magnetic Polaron Interactions in Insulating Doped Diluted Magnetic Semiconductors

The magnetic behavior of insulating doped diluted magnetic semiconductors (DMS) is characterized by the interaction of large collective spins known as bound magnetic polarons. Experimental measurements of the susceptibility of these materials have suggested that the polaron-polaron interaction is ferromagnetic, in contrast to the antiferromagnetic carrier-carrier interactions that are characteristic of nonmagnetic semiconductors. To explain this behavior, a model has been developed in which polarons interact via both the standard direct carrier-carrier exchange interaction (due to virtual carrier hopping) and an indirect carrier-ion-carrier exchange interaction (due to the interactions of polarons with magnetic ions in an interstitial region). Using a variational procedure, the optimal values of the model parameters were determined as a function of temperature. At temperatures of interest, the parameters describing polaron-polaron interactions were found to be nearly temperature-independent. For reasonable values of these constant parameters, we find that indirect ferromagnetic interactions can dominate the direct antiferromagnetic interactions and cause the polarons to align. This result supports the experimental evidence for ferromagnetism in insulating doped DMS.Comment: 11 pages, 7 figure

Absence of Conventional Spin-Glass Transition in the Ising Dipolar System LiHo_xY_{1-x}F_4

The magnetic properties of single crystals of LiHo_xY_{1-x}F_4 with x=16.5% and x=4.5% were recorded down to 35 mK using a micro-SQUID magnetometer. While this system is considered as the archetypal quantum spin glass, the detailed analysis of our magnetization data indicates the absence of a phase transition, not only in a transverse applied magnetic field, but also without field. A zero-Kelvin phase transition is also unlikely, as the magnetization seems to follow a non-critical exponential dependence on the temperature. Our analysis thus unmasks the true, short-ranged nature of the magnetic properties of the LiHo_xY_{1-x}F_4 system, validating recent theoretical investigations suggesting the lack of phase transition in this system.Comment: 5 pages, 4 figure