Redetermination of tris­(N,N-diethyl­dithio­carbamato)anti­mony(III)

The title compound, [Sb(C5H10NS2)3], was synthesized from Sb2O3, diethyl­amine, carbon dis­ulfide, hydro­chloric acid and sodium hydroxide. The structure has been published previously but H atoms were not included in the model [Raston & White (1976 ▶). Chem. Soc. Dalton Trans. p. 791]. The current determination has significantly higher precision than the original work. The complex has three ligands. The Sb atom is coordinated by three bidentate diethyl­dithio­carbamate groups, two in an almost planar fashion and the third perpendicular to that plane with a dihedral angle of 86.429 (13)°. One ethyl group is disordered over two positions of equal occupancy

An improvement of photocatalytic activity of TiO2 Degussa P25 powder

The photocatalytic activities of Degussa P25 powders annealed at various temperatures in vacuum and air were studied together with investigations of their compositions by XPS, of their crystal structures by XRD and of their specific surface areas by BET. It is shown that the photocatalytic activity of P25 powders was remarkably enhanced after vacuum annealing; the kinetic coefficient can be raised by 75% during annealing at 400 degrees C. It is obvious that this enhancement is not related to the adhesion ability of the P25 powders. (C) 2015 Elsevier B.V. All rights reserved.Fundacao para a Ciencia e Tecnologia (FCT) Portugal; FCT [Pest-OE/CTM/LA0024/2013]info:eu-repo/semantics/publishedVersio

TiO2 thin film synthesis from complex precursors by CVD, its physical and photocatalytic properties

Photocatalytic TiO2 films on glass and quartz plates were obtained by the chemical vapour deposition using Ti(dpm)(2)(Opr(i))(2) complex compound (CC-CVD method) in a standard vacuum apparatus at 1.2-2.0 x 10(-4) mbar. The substrate temperature was stabilised in the range of 450-600 degreesC. The growth rate varied from several nanometres to several dozen of nanometres per minute. Structural information on TiO2 thin films was obtained from synchrotron radiation experiments. High-resolution grazing incidence X-ray diffraction (GIXRD) experiments were performed at the high-resolution powder diffractometer at the DESY/HASYLAB beamline B2 (Hamburg, Germany). Thin films deposited on either single-crystal Si wafers or on amorphous quartz substrates were analysed. The photocatalytic activity of the TiO2 thin films was studied using a photocatalytic reactor. The fungicide Fenarimol was chosen as chemical indicator and its degradation kinetics was followed by High-Performance Liquid Chromatography (HPLC)

cis-Bis(4-methyl­piperazine-1-carbo­dithio­ato-κ2 S,S′)bis­(pyridine-κN)cadmium

In the title complex, [Cd(C6H11N2S2)2(C5H5N)2], the CdII ion is hexa­coordinated by two N atoms from two pyridine ligands and by four S atoms from two dithio­carbamate ligands in a distorted octa­hedral geometry. The CdII ion lies on a twofold axis. The piperazine ring is in chair conformation and its least-squares plane makes a dihedral angle of 81.4 (1)° with that of the pyridine ring

Peculiarities of electronic heat capacity of thulium cuprates in pseudogap state

Precise calorimetric measurements have been carried out in the 7 - 300 K temperature range on two ceramic samples of thulium 123 cuprates TmBa2Cu3O6.92 and TmBa2Cu3O6.70. The temperature dependence of the heat capacity was analyzed in the region where the pseudogap state (PGS) takes place. The lattice contribution was subtracted from the experimental data. The PGS component has been obtained by comparing electronic heat capacities of two investigated samples because the PGS contribution for the 6.92 sample is negligible. The anomalous behavior of the electronic heat capacity near the temperature boundary of PGS was found. It is supposed that this anomaly is due to peculiarities in N(E) function where N is the density of electronic states and E is the energy of carriers of charge.Comment: 12 pages, 3 Postscript figure

Electrical properties of thin-films wide-band gap semiconductor TiO(2) prepared by CVD

High dielectric constant TiO2 thin films are promising for gate insulator in 100-nm microelectronic technology. In this study rutile and anatase phase TiO2 thin films were prepared by Chemical Vapour Deposition (CVD) method. Bulk and surface chemical composition of thin films were characterized by high-resolution Laser Ionization Mass Spectrometry (LIMS) and by X-ray Photoemission Spectroscopy (XPS). Crystal structure was studied by (XRD). Silicon based Metal-Insulator semiconductor (MIS) capacitors formed on the high-k dielectric TiO2 were fabricated and characterized using small signal impedance studies as function of frequency and current vs voltage measurements. As it was shown from I–V characteristics, the Shockley equation adequately describes the conductivity mechanism in low field region. By analysis of I–V characteristics it was also found that there is change in carrier conduction mechanism from Shockley regime to the nonlinear Frenkel–Poole mechanism