Information matrix test, parameter heterogeneity and arch: A synthesis

Estimation

Quantum Phase Transition from a Spin-liquid State to a Spin-glass State in the Quasi-1D Spin-1 System Sr1-xCaxNi2V2O8

We report a quantum phase transition from a spin-liquid state to a spin-glass state in the quasi-one dimensional (1D) spin-1 system Sr1-xCaxNi2V2O8, induced by a small amount of Ca-substitution at Sr site. The ground state of the parent compound (x = 0) is found to be a spin-liquid type with a finite energy gap of 26.6 K between singlet ground state and triplet excited state. Both dc-magnetization and ac-susceptibility studies on the highest Ca-substituted compound (x = 0.05) indicate a spin-glass type magnetic ground state. With increasing Ca-concentration, the spin-glass ordering temperature increases from 4.5 K (for the x = 0.015 compound) to 6.25 K (for the x = 0.05 compound). The observed results are discussed in the light of the earlier experimental reports and the theoretical predictions for a quasi-1D spin-1 system.Comment: 26 pages, 8 figures, 3 table

Enhanced Raman and photoluminescence response in monolayer MoS2_2 due to laser healing of defects

Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS$_2$. The change in the carrier concentration, surrounding dielectric constant and defect concentration can modulate the photoluminescence and Raman spectra. Here we show that exposing the monolayer MoS$_2$ in air to a modest laser intensity for a brief period of time enhances simultaneously the photoluminescence (PL) intensity associated with both trions and excitons, together with $\sim$ 3 to 5 times increase of the Raman intensity of first and second order modes. The simultaneous increase of PL from trions and excitons cannot be understood based only on known-scenario of depletion of electron concentration in MoS$_2$ by adsorption of O$_2$ and H$_2$O molecules. This is explained by laser induced healing of defect states resulting in reduction of non-radiative Auger processes. This laser healing is corroborated by an observed increase of intensity of both the first order and second order 2LA(M) Raman modes by a factor of $\sim$ 3 to 5. The A$_{1g}$ mode hardens by $\sim$ 1.4 cm$^{-1}$ whereas the E$^1_{2g}$ mode softens by $\sim$ 1 cm$^{-1}$. The second order 2LA(M) Raman mode at $\sim$ 440 cm$^{-1}$ shows an increase in wavenumber by $\sim$ 8 cm$^{-1}$ with laser exposure. These changes are a combined effect of change in electron concentrations and oxygen-induced lattice displacements.Comment: 15 pages, 5 figures, Journal of Raman Spectroscopy, 201

On the Intersection Power Graph of a Finite Group

Given a group G, the intersection power graph of G, denoted by $\mathcal{G}_I(G)$, is the graph with vertex set G and two distinct vertices x and y are adjacent in $\mathcal{G}_I(G)$ if there exists a non-identity element $z\in G$ such that x^m=z=y^n, for some $m, n\in \mathbb{N}$, i.e. $x\sim y$ in $\mathcal{G}_I(G)$ if $\langle x\rangle\cap \langle y\rangle \neq \{e\}$ and $e$ is adjacent to all other vertices, where $e$ is the identity element of the group G. Here we show that the graph $\mathcal{G}_I(G)$ is complete if and only if either G is cyclic p-group or G is a generalized quaternion group. Furthermore, $\mathcal{G}_I(G)$ is Eulerian if and only if |G| is odd. We characterize all abelian groups and also all non-abelian p-groups G, for which $\mathcal{G}_I(G)$ is dominatable. Beside, we determine the automorphism group of the graph $\mathcal{G}_I(\mathbb{Z}_n)$, when $n\neq p^m$

Direct Evidence of Mg Incorporation Pathway in Vapor-Liquid-Solid Grown p-type Nonpolar GaN Nanowires

Doping of III-nitride based compound semiconductor nanowires is still a challenging issue to have a control over the dopant distribution in precise locations of the nanowire optoelectronic devices. Knowledge of the dopant incorporation and its pathways in nanowires for such devices is limited by the growth methods. We report the direct evidence of incorporation pathway for Mg dopants in p-type nonpolar GaN nanowires grown via vapour-liquid-solid (VLS) method in a chemical vapour deposition technique for the first time. Mg incorporation is confirmed using X-ray photoelectron (XPS) and electron energy loss spectroscopic (EELS) measurements. Energy filtered transmission electron microscopic (EFTEM) studies are used for finding the Mg incorporation pathway in the GaN nanowire. Photoluminescence studies on Mg doped GaN nanowires along with the electrical characterization on heterojunction formed between nanowires and n-Si confirm the activation of Mg atoms as p-type dopants in nonpolar GaN nanowires.Comment: 29 pages, 6 figures, journa

Quantum Size Effects in the Atomistic Structure of Armchair-Nanoribbons

Quantum size effects in armchair graphene nano-ribbons (AGNR) with hydrogen termination are investigated via density functional theory (DFT) in Kohn-Sham formulation. "Selection rules" will be formulated, that allow to extract (approximately) the electronic structure of the AGNR bands starting from the four graphene dispersion sheets. In analogy with the case of carbon nanotubes, a threefold periodicity of the excitation gap with the ribbon width (N, number of carbon atoms per carbon slice) is predicted that is confirmed by ab initio results. While traditionally such a periodicity would be observed in electronic response experiments, the DFT analysis presented here shows that it can also be seen in the ribbon geometry: the length of a ribbon with L slices approaches the limiting value for a very large width 1 << N (keeping the aspect ratio small N << L) with 1/N-oscillations that display the electronic selection rules. The oscillation amplitude is so strong, that the asymptotic behavior is non-monotonous, i.e., wider ribbons exhibit a stronger elongation than more narrow ones.Comment: 5 pages, 6 figure