Extracted Electronic Parameters of a Novel Ag/SnO2:In/Si/Au Schottky Diode for Solar Cell Application

The effect of indium on the characteristics of Ag / SnO2 : In / Si / Au Schottky diode (SD) is studied. The electronic parameters, ideal factor, the effective barrier, flat band barrier height, the series resistance, the saturation current density of the diodes were extracted from the current voltage (I-V) and capacitance voltage (C-V) characteristics. The series resistance (Rs) determined by Cheung method increases (508-534 Ω) with In doping level while the barrier height still constant around 0.57 V. Norde approximation gives a similar barrier height values of 0.69 V but the series resistance reaches higher values of 5500 Ω

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

The photovoltaic properties of a good rectifying Al/ZnO/pSi/Al Schottky diode are studied. The diode was fabricated from two processes like ultrasonic spray pyrolysis @ 350°C for the ZnO layer on p-type Si substrate and thermal evaporation in vacuum at 10-6Torr for the metallic contacts. The current-voltage (I-V)  measurements show a good rectifying behavior. Therefore, the extracted parameters are calculated in dark and illumination in one hand and under heating conditions in other hand. Ideality factor is lower around 1.5. Barrier height and series resistance, determined by Cheung-Cheung and Norde methods, are found to be 0.6-0.9 V and 1.4-5.4 kΩ. The parameters are influenced by increasing temperature; barrier height goes from 0.7 to 0.9 V and series resistance range within the range 1.2 -2.5 kΩ. Under light (150 W), the open circuit voltage and short circuit are found to be 0.09 V and 0.3 μA, the fill factor is of 0.44.Keywords: Schottky barrier diode; the sprayed ZnO film; Current-voltage  characteristics; Good rectifying behavior; Open circuit voltage; Barrier height; Series resistance

An Experimental Insight into the ZnO Thin Films Properties Prepared by Dip Coating Technique

The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on Xray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films (> 80 %) and optical band gap. Using the Hall Effect measurement (HMS) in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity

Effect of metal on characteristics of MPc organic diodes

The fabrication and electrical characterization of metal phthalocyanine MPc organic diodes have been investigated. The Au / MPc / Si Schottky diodes are fabricated via a spin coating route. Based on the electrical measurement of the current versus bias voltage in dark conditions we extract the parameters such as ideality factor, saturation current, series resistance and rectifying factor. Role of metal M = Cu, Al, Zn, Mg on the electronic parameters is emphasized. The obtained values of n, 1.85, 2.22 and 4.40, show a non-ideal behavior. Using a derivate dV / dlnI and H(I) functions, we determine the ideality factor and series resistance and found to be 2 and 17 Ω for the CuPc device

Characterization of Coated Fe-Doped Zinc Oxide Nanostructures

The nanostructures of iron-doped zinc oxide (FZO) produced by a simple and low cost dip-coating route onto a glass substrate were studied. The structural, morphological, electrical and optical properties of FZO films were investigated. Nanochains were revealed by SEM analysis at high magnification. A (002)-oriented wurzite structure with a lattice parameter of a = 3.24 Å and c = 5.19 Å was confirmed by X-rays diffraction. High transmittance was exhibited in the visible spectrum, T (550 nm) > 83 %. Finally, electrical measurements revealed a resistivity and mobility of 10 kΩ·cm, and 5 cm² / Vs respectively. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3191

Nanostructured Al doped Sn02 films grown onto ITO substrate via spray pyrolysis route

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties are investigated. The sprayed films are grown onto ITO substrate at 300°C from (SnCl4, 5H2O)as precursor. The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties are investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85%, the band gap is 3.7 eV.Nanotips are observed by 3D atomic force microscope (AFM) picture. The films exhibits very low resistivity found to be 9.85 10-5.cm, a high electron concentration around 1021cm-3, and low mobility 20 cm2/Vs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2053

Nanostructured Al Doped SnO2 Films Grown onto ITO Substrate via Spray Pyrolysis Route

We report on nanostructured films of Al doped tin oxide grown by facile spray pyrolysis route, and their physical properties were investigated. The sprayed films were grown onto indium tin oxide (ITO) substrate at 300 °C from the precursor (SnCl4, 5H2O). The content of Al is kept at 3 % in the solution. Structural, optical, electrical and surface properties were investigated. X-rays pattern reveals polycrystalline structure and SnO2 phase occurence. The visible transmitance exceeds 85 %, the band gap is found to be 3.7 eV. Nanotips were observed by 3D atomic force microscope (AFM) observation. Using the Hall effect measurements system (HMS), the films exhibit very low resistivity found to be 9.85 10 – 5 Ω.cm, a high electron concentration is around 1021 cm – 3, and the mobility reaches the value of 20 cm2/Vs. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2490

AFM Calculated Parameters of Morphology Investigation of Spin Coated MZO (M = Al, Sn, Cd, Co) Layers

This paper reports on the deposition and surface properties of the pure and doped zinc oxide layers produced by spin coating route. Pure and metallic (Al, Sn, Cd, Co) doped ZnO films are characterized by mean of atomic force microscopy (AFM). Based on atomic force microscope observation, some parameters such as grain size, height, orientation of angle and histogram are determined. The AFM scanned 2D and 3D-views permit us to discover the roughness, the average height and the skewness of clusters or grains

AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm – 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO /pSi/Al Schottky is determined and found to be 1012 (eV cm²) – 1. Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 Å and 0.28 m

AFM Calculated Parameters of Morphology Investigation of Spin Coated MZO (M = Al, Sn, Cd, Co) Layers

This paper reports on the deposition and surface properties of the pure and doped zinc oxide layers produced by spin coating route. Pure and metallic (Al, Sn, Cd, Co) doped ZnO films are characterized by mean of atomic force microscopy (AFM). Based on atomic force microscope observation, some parameters such as grain size, height, orientation of angle and histogram are determined. The AFM scanned 2D and 3D-views permit us to discover the roughness, the average height and the skewness of clusters or grains