Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

Session E.2: More Moore and Beyond Moore device technologies,International audienc

Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

International audienc

New parameter extraction method based on split C-V for FDSOI MOSFETs

International audienceA new parameter extraction methodology based on split C-V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C-V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝ Qi -2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows reliable MOSFET parameter extraction

New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

International audienceVol. 84, pp., doi:(June 2013

Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

International audienc