Vortex axisymmetrization, inviscid damping, and vorticity depletion in the linearized 2D Euler equations

Coherent vortices are often observed to persist for long times in turbulent 2D flows even at very high Reynolds numbers and are observed in experiments and computer simulations to potentially be asymptotically stable in a weak sense for the 2D Euler equations. We consider the incompressible 2D Euler equations linearized around a radially symmetric, strictly monotone decreasing vorticity distribution. For sufficiently regular data, we prove the inviscid damping of the θ-dependent radial and angular velocity fields with the optimal rates ∥ur(t)∥≲⟨t⟩−1 and ∥∥uθ(t)∥∥≲⟨t⟩−2 in the appropriate radially weighted L2 spaces. We moreover prove that the vorticity weakly converges back to radial symmetry as t→∞, a phenomenon known as vortex axisymmetrization in the physics literature, and characterize the dynamics in higher Sobolev spaces. Furthermore, we prove that the θ-dependent angular Fourier modes in the vorticity are ejected from the origin as t→∞, resulting in faster inviscid damping rates than those possible with passive scalar evolution. This non-local effect is called vorticity depletion. Our work appears to be the first to find vorticity depletion relevant for the dynamics of vortices

Re-entrant Layer-by-Layer Etching of GaAs(001)

We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration.Comment: 11 pages, REVTeX 3.0. Physical Review Letters, in press

Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering at room temperature followed by a 973K anneal yields atomically clean and flat Si(100) surfaces suitable for nanoscale device fabrication.Comment: 13 pages, 3 figures, to be published in Applied Surface Scienc

The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface roughening. AP2 antiphase boundaries are stable up to 973K, and ion sputtering and solid phase epitaxy performed at 973K result in atomically flat Si(001) surfaces.Comment: 16 pages, 4 figures, to be published in Surface Scienc

Holographic microscopy for 3D tracking of bacteria

Understanding when, how, and if bacteria swim is key to understanding critical ecological and biological processes, from carbon cycling to infection. Imaging motility by traditional light microscopy is limited by focus depth, requiring cells to be constrained in z. Holographic microscopy offers an instantaneous 3D snapshot of a large sample volume, and is therefore ideal in principle for quantifying unconstrained bacterial motility. However, resolving and tracking individual cells is difficult due to the low amplitude and phase contrast of the cells; the index of refraction of typical bacteria differs from that of water only at the second decimal place. In this work we present a combination of optical and sample-handling approaches to facilitating bacterial tracking by holographic phase imaging. The first is the design of the microscope, which is an off-axis design with the optics along a common path, which minimizes alignment issues while providing all of the advantages of off-axis holography. Second, we use anti-reflective coated etalon glass in the design of sample chambers, which reduce internal reflections. Improvement seen with the antireflective coating is seen primarily in phase imaging, and its quantification is presented here. Finally, dyes may be used to increase phase contrast according to the Kramers-Kronig relations. Results using three test strains are presented, illustrating the different types of bacterial motility characterized by an enteric organism (Escherichia coli), an environmental organism (Bacillus subtilis), and a marine organism (Vibrio alginolyticus). Data processing steps to increase the quality of the phase images and facilitate tracking are also discussed

Automated Performance Characterization of DSN System Frequency Stability Using Spacecraft Tracking Data

This software provides an automated capability to measure and qualify the frequency stability performance of the Deep Space Network (DSN) ground system, using daily spacecraft tracking data. The results help to verify if the DSN performance is meeting its specification, therefore ensuring commitments to flight missions; in particular, the radio science investigations. The rich set of data also helps the DSN Operations and Maintenance team to identify the trends and patterns, allowing them to identify the antennas of lower performance and implement corrective action in a timely manner. Unlike the traditional approach where the performance can only be obtained from special calibration sessions that are both time-consuming and require manual setup, the new method taps into the daily spacecraft tracking data. This new approach significantly increases the amount of data available for analysis, roughly by two orders of magnitude, making it possible to conduct trend analysis with good confidence. The software is built with automation in mind for end-to-end processing. From the inputs gathering to computation analysis and later data visualization of the results, all steps are done automatically, making the data production at near zero cost. This allows the limited engineering resource to focus on high-level assessment and to follow up with the exceptions/deviations. To make it possible to process the continual stream of daily incoming data without much effort, and to understand the results quickly, the processing needs to be automated and the data summarized at a high level. Special attention needs to be given to data gathering, input validation, handling anomalous conditions, computation, and presenting the results in a visual form that makes it easy to spot items of exception/ deviation so that further analysis can be directed and corrective actions followed

Modeling of ion implantation and diffusion in Si

Classical molecular dynamics simulations are used to study damage produced during implantation of semiconductors with different ion masses and energies between 1-25 keV. The time scale for these simulations is only on the order of ns, and therefore problems like transient enhanced diffusion of dopants or formation of extended defects can not be studied with these models. Monte Carlo simulations, including as input the results obtained from molecular dynamics calculations, are used to extend the simulation time, and in particular, to study processes like ion implantation and defects diffusion in semiconductors. As an example, we show results for diffusion of the damage produced by implantation of Si with 5 keV Xe ions at low doses. Results of the simulations are compared with experiments in order to validate the model

A Multi-Modal Volumetric Microscope with Automated Sample Handling for Surveying Microbial Life in Liquid Samples

In the study of microbial life, microscopy plays a unique role due to its ability to detect ordered structure, motility, and fluorescence signals. As such it has also recently gained attention in the context of searching for extant life on distant Solar System bodies bearing liquid water. In this paper we introduce a multimodal volumetric microscopy system for potential future spaceflight missions that combines digital holographic microscopy (DHM) and volume fluorescence imager (VFI), which are volumetric imaging methods that provide highresolution, high-throughput examination of liquid samples. DHM provides information on the absorption, morphology, and motility of imaged objects without requiring the use of contrast agents. On the other hand, VFI based on light field microscopy focuses on the fluorescence signals from the sample to observe specific structures dyed with targeted contrast agents or providing unique autofluorescence signals. We also present an autonomous sample handling and data acquisition system to allow for an autonomous mission to distant planets or moons, or for autonomous use in bodies of water on Earth. The full system, named ELVIS, or Extant Life Volumetric Imaging System, is capable of autonomously surveying a liquid sample to extract morphology, motility, and fluorescence signals of extant microbial life

ELVIS: A Correlated Light-Field and Digital Holographic Microscope for Field and Laboratory Investigations

This is the first of two articles on the Extant Life Volumetric Imaging System (ELVIS) describing a combined digital holographic microscope (DHM) and a fluorescence light-field microscope (FLFM). The instrument is modular and robust enough for field use. Each mode uses its own illumination source and camera, but both microscopes share a common objective lens and sample viewing chamber. This allows correlative volumetric imaging in amplitude, quantitative phase, and fluorescence modes. A detailed schematic and parts list is presented, as well as links to open-source software packages for data acquisition and analysis that permits interested researchers to duplicate the design. Instrument performance is quantified using test targets and beads. In the second article on ELVIS, to be published in the next issue of Microscopy Today, analysis of data from field tests and images of microorganisms will be presented

Investigation of Single Boron Acceptors at the Cleaved Si:B (111) Surface

The cleaved and (2 x 1) reconstructed (111) surface of p-type Si is investigated by scanning tunneling microscopy (STM). Single B acceptors are identified due to their characteristic voltage-dependent contrast which is explained by a local energetic shift of the electronic density of states caused by the Coulomb potential of the negatively charged acceptor. In addition, detailed analysis of the STM images shows that apparently one orbital is missing at the B site at sample voltages of 0.4 - 0.6 V, corresponding to the absence of a localized dangling-bond state. Scanning tunneling spectroscopy confirms a strongly altered density of states at the B atom due to the different electronic structure of B compared to Si.Comment: 6 pages, 7 figure