Nickel layers on indium arsenide

We report here on the preparation and characterization of InAs substrates for in situ deposition of ferromagnetic contacts, a necessary precursor for semiconductor devices based on spin injection. InAs has been grown on InAs(111)A and (100) substrates by molecular-beam epitaxy and then metalized in situ in order to better understand the mechanisms that inhibit spin injection into a semiconductor. Initial x-ray characterization of the samples indicate the presence of nickel arsenides and indium–nickel compounds forming during deposition at temperatures above room temperature. Several temperature ranges have been investigated in order to determine the effect on nickel-arsenide formation. The presence of such compounds at the interface could greatly reduce the spin-injection efficiency and help elucidate previous unsuccessful attempts at measuring spin injection into InAs

Spin pumping by a field-driven domain wall

We calculate the charge current in a metallic ferromagnet to first order in the time derivative of the magnetization direction. Irrespective of the microscopic details, the result can be expressed in terms of the conductivities of the majority and minority electrons and the non-adiabatic spin transfer torque parameter $\beta$. The general expression is evaluated for the specific case of a field-driven domain wall and for that case depends strongly on the ratio of $\beta$ and the Gilbert damping constant. These results may provide an experimental method to determine this ratio, which plays a crucial role for current-driven domain-wall motion.Comment: 4 pages, 1 figure v2: some typos corrected v3: published versio

Three-dimensional analysis of the Pratt and Whitney alternate design SSME fuel turbine

The three dimensional viscous time-mean flow in the Pratt and Whitney alternate design space shuttle main engine fuel turbine is simulated using the average passage Navier-Stokes equations. The migration of secondary flows generated by upstream blade rows and their effect on the performance of downstream blade rows is studied. The present simulation confirms that the flow in this two stage turbine is highly three dimensional and dominated by the tip leakage flow. The tip leakage vortex generated by the first blade persists through the second blade and adversely affects its performance. The greatest mixing of the inlet total temperature distortion occurs in the second vane and is due to the large leakage vortex generated by the upstream rotor. It is assumed that the predominant spanwise mixing mechanism in this low aspect ratio turbine is the radial transport due to the deterministically unsteady vortical flow generated by upstream blade rows. A by-product of the analysis is accurate pressure and heat loads for all blade rows under the influence of neighboring blade rows. These aero loads are useful for advanced structural analysis of the vanes and blades

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE

The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS

A Novel Broadband Measurement Method for the Magnetoimpedance of Ribbons and Thin Films

A novel broad-band measurement method of the MI in thin films and ribbons is presented. It is based on the automated measurement of the reflection coefficient of a cell loaded with the sample. Illustrative results obtained with a permalloy multilayer thin film are presented and discussed.Comment: Paper submitted to International Conference on Magnetism (Rome 2003

Effects of lattice distortion and Jahn–Teller coupling on the magnetoresistance of La0.7Ca0.3MnO3 and La0.5Ca0.5CoO3 epitaxial films

Studies of La0.7Ca0.3MnO3 epitaxial films on substrates with a range of lattice constants reveal two dominant contributions to the occurrence of colossal negative magnetoresistance (CMR) in these manganites: at high temperatures (T → TC, TC being the Curie temperature), the magnetotransport properties are predominantly determined by the conduction of lattice polarons, while at low temperatures (T ≪ TC/, the residual negative magnetoresistance is correlated with the substrate-induced lattice distortion which incurs excess magnetic domain wall scattering. The importance of lattice polaron conduction associated with the presence of Jahn–Teller coupling in the manganites is further verified by comparing the manganites with epitaxial films of another ferromagnetic perovskite, La0.5Ca0.5CoO3. Regardless of the differences in the substrate-induced lattice distortion, the cobaltite films exhibit much smaller negative magnetoresistance, which may be attributed to the absence of Jahn–Teller coupling and the high electron mobility that prevents the formation of lattice polarons. We therefore suggest that lattice polaron conduction associated with the Jahn–Teller coupling is essential for the occurrence of CMR, and that lattice distortion further enhances the CMR effects in the manganites

Advanced secondary power system for transport aircraft

A concept for an advanced aircraft power system was identified that uses 20-kHz, 440-V, sin-wave power distribution. This system was integrated with an electrically powered flight control system and with other aircraft systems requiring secondary power. The resulting all-electric secondary power configuration reduced the empty weight of a modern 200-passenger, twin-engine transport by 10 percent and the mission fuel by 9 percent