IGB grid: User's manual (A turbomachinery grid generation code)

A grid generation code called IGB is presented for use in computational investigations of turbomachinery flowfields. It contains a combination of algebraic and elliptic techniques coded for use on an interactive graphics workstation. The instructions for use and a test case are included

Nickel layers on indium arsenide

We report here on the preparation and characterization of InAs substrates for in situ deposition of ferromagnetic contacts, a necessary precursor for semiconductor devices based on spin injection. InAs has been grown on InAs(111)A and (100) substrates by molecular-beam epitaxy and then metalized in situ in order to better understand the mechanisms that inhibit spin injection into a semiconductor. Initial x-ray characterization of the samples indicate the presence of nickel arsenides and indium–nickel compounds forming during deposition at temperatures above room temperature. Several temperature ranges have been investigated in order to determine the effect on nickel-arsenide formation. The presence of such compounds at the interface could greatly reduce the spin-injection efficiency and help elucidate previous unsuccessful attempts at measuring spin injection into InAs

Three-dimensional analysis of the Pratt and Whitney alternate design SSME fuel turbine

The three dimensional viscous time-mean flow in the Pratt and Whitney alternate design space shuttle main engine fuel turbine is simulated using the average passage Navier-Stokes equations. The migration of secondary flows generated by upstream blade rows and their effect on the performance of downstream blade rows is studied. The present simulation confirms that the flow in this two stage turbine is highly three dimensional and dominated by the tip leakage flow. The tip leakage vortex generated by the first blade persists through the second blade and adversely affects its performance. The greatest mixing of the inlet total temperature distortion occurs in the second vane and is due to the large leakage vortex generated by the upstream rotor. It is assumed that the predominant spanwise mixing mechanism in this low aspect ratio turbine is the radial transport due to the deterministically unsteady vortical flow generated by upstream blade rows. A by-product of the analysis is accurate pressure and heat loads for all blade rows under the influence of neighboring blade rows. These aero loads are useful for advanced structural analysis of the vanes and blades

Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE

The surface morphology of GaN is observed by atomic force microscopy for growth on GaN and AlN buffer layers and as a function of III/V flux ratio. Films are grown on sapphire substrates by molecular beam epitaxy using a radio frequency nitrogen plasma source. Growth using GaN buffer layers leads to N-polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Ga-rich as possible, although Ga droplets tend to form. Ga-polar films can be grown on AlN buffer layers, with the surface morphology determined by the conditions of buffer layer deposition as well as the III/V ratio for growth of the GaN layer. Near-stoichiometric buffer layer growth conditions appear to support the flattest surfaces in this case. Three defect types are typically observed in GaN films on AlN buffers, including large and small pits and "loop" defects. It is possible to produce surfaces free from large pit defects by growing thicker films under more Ga-rich conditions. In such cases the surface roughness can be reduced to less than 1 nm RMS

High-Q Gold and Silicon Nitride Bilayer Nanostrings

Low-mass, high-Q, silicon nitride nanostrings are at the cutting edge of nanomechanical devices for sensing applications. Here we show that the addition of a chemically functionalizable gold overlayer does not adversely affect the Q of the fundamental out-of-plane mode. Instead the device retains its mechanical responsiveness while gaining sensitivity to molecular bonding. Furthermore, differences in thermal expansion within the bilayer give rise to internal stresses that can be electrically controlled. In particular, an alternating current excites resonant motion of the nanostring. This AC thermoelastic actuation is simple, robust, and provides an integrated approach to sensor actuation.Comment: 5 pages, 4 figures + supplementary materia

A Sub-Nanosecond Gate Bias-Switching Circuit for GaN RF Power Amplifiers

In this letter, we present a design of a fast gate-switching power amplifier (GSPA) aimed at reducing its power consumption. This GSPA features a dedicated fast gate-switching circuit that commutates the gallium nitride (GaN) transistor between a nominal gate bias voltage (GSPA ON) and a strong negative voltage (GSPA OFF), thereby generating two discrete output power levels in an RF-pulsewidth modulation (PWM) fashion. A fast gate-switching circuit, including a commercial digital voltage isolator, is designed to switch between two gate bias voltages. The gate stability resistor and transmission line (TL) are carefully placed and designed to reduce the GSPA parasitic bias line and enable fast switching. Measured results provided a rise and fall time of 750 and 950 ps, respectively, and achieved RF pulsewidths as narrow as 5.88 ns, thus corresponding to a 170-MHz bandwidth