206 research outputs found

    Effect of catalyst pretreatment on chirality-selective growth of single-walled carbon nanotubes

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    We show that catalyst pre-treatment conditions can have a profound effect on the chiral distribution in single-walled carbon nanotubes chemical vapor deposition. Using a SiO2-supported Cobalt model catalyst and pre-treatment in NH3, we obtain a comparably narrowed chiral distribution with a downshifted tube diameter range, independent of the hydrocarbon source. Our findings demonstrate that the state of the catalyst at the point of nanotube nucleation is of fundamental importance for chiral control, thus identifying the pre-treatment atmosphere as a key parameter for control of diameter and chirality distributions.B.C.B acknowledges a Research Fellowship at Hughes Hall, Cambridge. J.R. thanks the Alexander von Humboldt Foundation for support.This is the original submitted version, prior to peer-review. The final version's available from ACS at http://pubs.acs.org/doi/abs/10.1021/jp4085348

    Effects of polymethylmethacrylate-transfer residues on the growth of organic semiconductor molecules on chemical vapor deposited graphene

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    Scalably grown and transferred graphene is a highly promising material for organic electronic applications, but controlled interfacing of graphene thereby remains a key challenge. Here, we study the growth characteristics of the important organic semiconductor molecule para-hexaphenyl (6P) on chemical vapor deposited graphene that has been transferred with polymethylmethacrylate (PMMA) onto oxidized Si wafer supports. A particular focus is on the influence of PMMA residual contamination, which we systematically reduce by H2 annealing prior to 6P deposition. We find that 6P grows in a flat-lying needle-type morphology, surprisingly independent of the level of PMMA residue and of graphene defects. Wrinkles in the graphene typically act as preferential nucleation centers. Residual PMMA does however limit the length of the resulting 6P needles by restricting molecular diffusion/attachment. We discuss the implications for organic device fabrication, with particular regard to contamination and defect tolerance.B.C.B acknowledges a College Research Fellowship from Hughes Hall, Cambridge. P.R.K. acknowledges the Lindemann Trust Fellowship. A.M. and G.R. acknowledge support by the Serbian MPNTR through Projects OI 171005 and III 45018. R.S.W. acknowledges a research fellowship from St. John’s College, Cambridge. S.H. acknowledges funding from EPSRC (GRAPHTED, Grant No. EP/K016636/1). We want to thank Dr. Sarah M. Skoff (Vienna University of Technology, Austria) for fruitful discussions.This is the author accepted manuscript. The final published version is available via AIP at http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4913948

    Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.

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    The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ∼0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 μm) is demonstrated via an admixture of Si to Fe catalyst films. A simple thin-film Fe/SiO2/Si catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in situ and ex situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials.S.C. acknowledges funding from EPSRC (Doctoral training award). R.S.W. acknowledges a Research Fellowship from St. John ’ s College. B.C.B acknowledges a Research Fellowship at Hughes Hall. A.C.-V. acknowledges the Conacyt Cambridge Scholarship and Roberto Rocca Fellowship. S.H. acknowledges funding from ERC grant InsituNANO (No. 279342). B.B., S.J.S., K.M., and A.J.P. would like to acknowledge the National Measurement O ffi ce (NMO) for funding through the Innovation, Research and Development (IRD) programme (Project No. 115948). We acknowledge the European Synchrotron Radiation Fac ility (ESRF) for provision of synchrotron radiation, and we thank the sta ff for assistance in using beamline BM20/ROBL. We would also like to acknowl- edge Prof. Bonnie J. Tyler for discussions related to the manuscript.This is the final published article. It first appeared at http://pubs.acs.org/doi/abs/10.1021/nl5046632

    The influence of intercalated oxygen on the properties of graphene on polycrystalline Cu under various environmental conditions.

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    Intercalation of oxygen at the interface of graphene grown by chemical vapour deposition and its polycrystalline copper catalyst can have a strong impact on the electronic, chemical and structural properties of both the graphene and the Cu. This can affect the oxidation resistance of the metal as well as subsequent graphene transfer. Here, we show, using near ambient pressure X-ray photoelectron spectroscopy (NAP-XPS), X-ray absorption near edge spectroscopy (XANES), energy dispersive X-ray spectroscopy (EDX) and (environmental) scanning electron microscopy (ESEM) that both the oxygen intercalation and de-intercalation are kinetically driven and can be clearly distinguished from carbon etching. The obtained results reveal that a charge transfer between as grown graphene and Cu can be annulled by intercalating oxygen creating quasi-free-standing graphene. This effect is found to be reversible on vacuum annealing proceeding via graphene grain boundaries and defects within the graphene but not without loss of graphene by oxidative etching for repeated (de-)intercalation cycles.P.R.K. acknowledges the Lindemann Trust Fellowship. R.S.W. acknowledges a Research Fellowship from St. John’s College, Cambridge. S.H. acknowledges funding from ERC grant InsituNANO (No. 279342) and EPSRC under grant GRAPHTED (Ref. EP/K016636/1). R.B. and A.K.-G. acknowledge funding from EU project GRAFOL, grant 285275.This is the final published version. It first appeared at http://pubs.rsc.org/en/Content/ArticleLanding/2014/CP/c4cp04025b#!divAbstract

    Nitrogen controlled iron catalyst phase during carbon nanotube growth

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    Close control over the active catalyst phase and hence carbon nanotube structure remains challenging in catalytic chemical vapor deposition since multiple competing active catalyst phases typically co-exist under realistic synthesis conditions. Here, using in-situ X-ray diffractometry we show that the phase of supported iron catalyst particles can be reliably controlled via the addition of NH3 during nanotube synthesis. Unlike to polydisperse catalyst phase mixtures during H2 diluted nanotube growth, nitrogen addition controllably leads to phase-pure γ-Fe during pre-treatment and to phase-pure Fe3C during growth. We rationalize these findings in the context of ternary Fe-C-N phase diagram calculations and thus highlight the use of pretreatment- and add-gases as a key parameter towards controlled carbon nanotube growth.This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.489795

    Tantalum-oxide catalysed chemical vapour deposition of single- and multi-walled carbon nanotubes

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    Tantalum-oxide thin films are shown to catalyse single- and multi-walled carbon nanotube growth by chemical vapour deposition. A low film thickness, the nature of the support material (best results with SiO2) and an atmospheric process gas pressure are of key importance for successful nanotube nucleation. Strong material interactions, such as silicide formation, inhibit nanotube growth. In situ X-ray photoelectron spectroscopy indicates that no catalyst reduction to Ta-metal or Ta-carbide occurs during our nanotube growth conditions and that the catalytically active phase is the Ta-oxide phase. Such a reduction-free oxide catalyst can be technologically advantageous.S.H. acknowledges funding from the EPSRC (Grant No. EP/ H047565/1) and from ERC grant InsituNANO (project reference 279342). We acknowledge the Helmholtz-Zentrum-Berlin BESSY II synchrotron, and we thank the BESSY staff for continuous support. We acknowledge partial funding from the EC project Technotubes. C.D. acknowledges the Royal Society for funding and B.C.B. acknowledges a Research Fellowship from Hughes Hall, Cambridge.This is the final published version. It first appeared at http://pubs.rsc.org/en/Content/ArticleLanding/2013/RA/c3ra23304a#!divAbstract

    Introducing Overlapping Grain Boundaries in Chemical Vapor Deposited Hexagonal Boron Nitride Monolayer Films.

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    We demonstrate the growth of overlapping grain boundaries in continuous, polycrystalline hexagonal boron nitride (h-BN) monolayer films via scalable catalytic chemical vapor deposition. Unlike the commonly reported atomically stitched grain boundaries, these overlapping grain boundaries do not consist of defect lines within the monolayer films but are composed of self-sealing bilayer regions of limited width. We characterize this overlapping h-BN grain boundary structure in detail by complementary (scanning) transmission electron microscopy techniques and propose a catalytic growth mechanism linked to the subsurface/bulk of the process catalyst and its boron and nitrogen solubilities. Our data suggest that the overlapping grain boundaries are comparatively resilient against deleterious pinhole formation associated with grain boundary defect lines and thus may reduce detrimental breakdown effects when polycrystalline h-BN monolayer films are used as ultrathin dielectrics, barrier layers, or separation membranes

    Reactive intercalation and oxidation at the buried graphene-germanium interface

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    We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.We acknowledge financial support from the EPSRC (EP/K016636/1, EP/P51021X/1) and the Future Photonics Hub - Innovation Partnership Fund (EPSRC EP/L00044X/1). P.B.W. acknowledges EPSRC Cambridge NanoDTC EP/G037221/1. R.S.W. acknowledges funding from the European Union’s Horizon 2020 research and innovation programme through a EU Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (no. 656870). R.W. acknowledges EPSRC Doctoral Training Award (EP/M506485/1)

    In Situ Observations of Phase Transitions in Metastable Nickel (Carbide)/Carbon Nanocomposites.

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    Nanocomposite thin films comprised of metastable metal carbides in a carbon matrix have a wide variety of applications ranging from hard coatings to magnetics and energy storage and conversion. While their deposition using nonequilibrium techniques is established, the understanding of the dynamic evolution of such metastable nanocomposites under thermal equilibrium conditions at elevated temperatures during processing and during device operation remains limited. Here, we investigate sputter-deposited nanocomposites of metastable nickel carbide (Ni3C) nanocrystals in an amorphous carbon (a-C) matrix during thermal postdeposition processing via complementary in situ X-ray diffractometry, in situ Raman spectroscopy, and in situ X-ray photoelectron spectroscopy. At low annealing temperatures (300 °C) we observe isothermal Ni3C decomposition into face-centered-cubic Ni and amorphous carbon, however, without changes to the initial finely structured nanocomposite morphology. Only for higher temperatures (400-800 °C) Ni-catalyzed isothermal graphitization of the amorphous carbon matrix sets in, which we link to bulk-diffusion-mediated phase separation of the nanocomposite into coarser Ni and graphite grains. Upon natural cooling, only minimal precipitation of additional carbon from the Ni is observed, showing that even for highly carbon saturated systems precipitation upon cooling can be kinetically quenched. Our findings demonstrate that phase transformations of the filler and morphology modifications of the nanocomposite can be decoupled, which is advantageous from a manufacturing perspective. Our in situ study also identifies the high carbon content of the Ni filler crystallites at all stages of processing as the key hallmark feature of such metal-carbon nanocomposites that governs their entire thermal evolution. In a wider context, we also discuss our findings with regard to the much debated potential role of metastable Ni3C as a catalyst phase in graphene and carbon nanotube growth
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