3 research outputs found
Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology’,
Abstract: The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors
Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology
The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 um from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode
consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown
good operating characteristics, with a 47 mV/pH response. The use of a commercial
CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors.Peer reviewe