9 research outputs found

    Atomic-scale kinetic Monte Carlo simulations of diamond chemical vapor deposition.

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    Diamond's superb mechanical, thermal, optical, and electronic properties are ideally suited for use in protective coatings, thermal management components, cold cathode emitters, and high-performance electronic devices, among others. Diamond can be chemically vapor deposited (CVD) to produce coatings and thin films, but this technique is currently expensive and difficult to control, and the details of the molecular processes that lead to diamond deposition remain unclear. The goal of this work is to construct a tool by which the nano-scale processes that lead to diamond growth, and their effects on film properties, can be examined. This is accomplished through the development of a kinetic Monte Carlo simulation method that treats diamond deposition on the atomic length scale using established chemical reaction rate data as input, while addressing deposition time scales that correspond directly to real growth experiments. The impact of the atomic-scale surface reaction processes on the growth kinetics, surface morphologies, and defect densities of single crystal CVD diamond are examined. In this way, a clearer understanding of the connection between atomic-scale deposition processes and CVD diamond film properties can be obtained. The growth kinetics and surface morphologies that develop during deposition are found to depend primarily on the details of the atomic surface features and their effects on bonding during deposition. The (110) and (111) surfaces facet under certain growth conditions. The (100) surface grows fastest and roughens, in contradiction to experimental observations. This can be rectified by the introduction of a mechanism for the preferential etching of monatomic islands on (100) facets, whereby the simulations predict slow-growing smooth (100) faces in accord with experimental observations. The trapping of H atoms is enhanced at higher substrate temperatures where the flux of larger \rm C\sb2H\sb2 molecules to the surface is high. Incorporation of sp\sp2 defects is highest for high-CH\sb4 feeds which generate less H, since H is required to convert sp2-bonded C on the surface to sp\sp3-bonded material. Vacancy incorporation is not substantial. The ratio of simulated growth rate to defect concentration is maximized around 800-950\sp\circC and 1% inlet CH\sb4, for which experiments also produce the best quality CVD diamond.Ph.D.Applied SciencesMaterials scienceUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/130901/2/9825167.pd

    Quantifying uncertainty from material inhomogeneity.

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    Most engineering materials are inherently inhomogeneous in their processing, internal structure, properties, and performance. Their properties are therefore statistical rather than deterministic. These inhomogeneities manifest across multiple length and time scales, leading to variabilities, i.e. statistical distributions, that are necessary to accurately describe each stage in the process-structure-properties hierarchy, and are ultimately the primary source of uncertainty in performance of the material and component. When localized events are responsible for component failure, or when component dimensions are on the order of microstructural features, this uncertainty is particularly important. For ultra-high reliability applications, the uncertainty is compounded by a lack of data describing the extremely rare events. Hands-on testing alone cannot supply sufficient data for this purpose. To date, there is no robust or coherent method to quantify this uncertainty so that it can be used in a predictive manner at the component length scale. The research presented in this report begins to address this lack of capability through a systematic study of the effects of microstructure on the strain concentration at a hole. To achieve the strain concentration, small circular holes (approximately 100 {micro}m in diameter) were machined into brass tensile specimens using a femto-second laser. The brass was annealed at 450 C, 600 C, and 800 C to produce three hole-to-grain size ratios of approximately 7, 1, and 1/7. Electron backscatter diffraction experiments were used to guide the construction of digital microstructures for finite element simulations of uniaxial tension. Digital image correlation experiments were used to qualitatively validate the numerical simulations. The simulations were performed iteratively to generate statistics describing the distribution of plastic strain at the hole in varying microstructural environments. In both the experiments and simulations, the deformation behavior was found to depend strongly on the character of the nearby microstructure
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