20,065 research outputs found

    Subsolar-meridian mean annual distributions for Martian troposphere below 50 kilometers

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    Subsolar-meridian mean annual distributions for Martian troposphere below 50 k

    Lead telluride bonding and segmentation study Semiannual phase report, Aug. 1, 1967 - Jan. 31, 1968

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    Constitutional studies of SnTe and Si-Ge metal systems, segmented Si-Ge-PdTe thermocouple efficiencies, and pore migration in PbSnTe thermoelement

    Lead telluride bonding and segmentation study Interim report, 1 Nov. 1966 - 31 Jul. 1967

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    Lead telluride bonding and segmentation studies including couple design, test devices, and life testin

    Thick film silicon growth techniques

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    Silicon ribbon growth experiments were conducted using orifices (dies) fabricated from SiC-SiO2 mixtures, fused quartz, SiC, and fine-grained, high density graphite. The best results were obtained from graphite dies. A number of different approaches was tried in modifying the thermal gradient in the dies and in holding the dies. The best results here were obtained from a 0.25-in. thick Mo disc holding a graphite die directly and fitting the die quite closely. Ribbon growths as wide as 9 mm were obtained, while the longest ribbon was 450 x 3.5 x 0.5 mm. Resistivities of ribbons grown from graphite dies have been measured over the range of 0.03 to 1.6 ohm-cm. Some thoughts and literature findings are presented regarding refractory oxide materials as potential orifices

    Lead telluride bonding and segmentation study Semiannual phase report, 1 Feb. - 31 Jul. 1969

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    Thermoelectric system of Cd-Si-Ge, and tungsten diffusion bonded lead tellurid

    Searching and Stopping: An Analysis of Stopping Rules and Strategies

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    Searching naturally involves stopping points, both at a query level (how far down the ranked list should I go?) and at a session level (how many queries should I issue?). Understanding when searchers stop has been of much interest to the community because it is fundamental to how we evaluate search behaviour and performance. Research has shown that searchers find it difficult to formalise stopping criteria, and typically resort to their intuition of what is "good enough". While various heuristics and stopping criteria have been proposed, little work has investigated how well they perform, and whether searchers actually conform to any of these rules. In this paper, we undertake the first large scale study of stopping rules, investigating how they influence overall session performance, and which rules best match actual stopping behaviour. Our work is focused on stopping at the query level in the context of ad-hoc topic retrieval, where searchers undertake search tasks within a fixed time period. We show that stopping strategies based upon the disgust or frustration point rules - both of which capture a searcher's tolerance to non-relevance - typically result in (i) the best overall performance, and (ii) provide the closest approximation to actual searcher behaviour, although a fixed depth approach also performs remarkably well. Findings from this study have implications regarding how we build measures, and how we conduct simulations of search behaviours

    Thick film silicon growth techniques

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    Thick film silicon ribbons were produced by means of the edge-defined, film-fed growth (EFG) technique. EFG is a process by which single crystals may be grown having a shape controlled by the outside dimensions of a die, the growth taking place from an extremely thin film of liquid fed by capillary action from a crucible below. The principal problem to be overcome in the application of this process to the growth of thick film silicon ribbon relates to the material, such as the shaping die. For the method to operate, this die material must be wet by the liquid silicon. To preserve semiconductor quality, the liquid silicon must not react significantly with the die material. The most promising die material for this application appears to be SiC and SiC-SiO2 admixture. In this case good wetting occurs between the molten silicon and the SiC. C is a relatively unharmful contaminant of Si and additions of quartz to SiC are found to decrease the extent of reaction

    A Review of The Law and Teacher Employment

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    A Review of The Law and Teacher Employment

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