Controlling shot noise in double-barrier magnetic tunnel junctions

We demonstrate that shot noise in Fe/MgO/Fe/MgO/Fe double-barrier magnetic tunnel junctions is determined by the relative magnetic configuration of the junction and also by the asymmetry of the barriers. The proposed theoretical model, based on sequential tunneling through the system and including spin relaxation, successfully accounts for the experimental observations for bias voltages below 0.5V, where the influence of quantum well states is negligible. A weak enhancement of conductance and shot noise, observed at some voltages (especially above 0.5V), indicates the formation of quantum well states in the middle magnetic layer. The observed results open up new perspectives for a reliable magnetic control of the most fundamental noise in spintronic structures.Comment: 8 pages, 4 figure

Surface and bulk polaritons in a linear magnetoelectric multiferroic with canted spins: Transverse Electric polarisation

Some magnetoelectric multiferroics have a canted spin structure that can be described by a Dzyaloshinkii-Moriya coupling. We calculate properties and features expected for surface and bulk magnon polaritons in such media with a linear magnetoelectric interaction for the case of transverse electric polarisation. The dielectric polarisation and magnetisation of weak ferromagnetism are constrained to lie in the plane parallel to the surface. We examine a geometry with the polarisation oriented in the film plane and present numerical results for the transverse electric polarisation. Particular attention is given to non-reciprocal surface modes, which exist in frequency between two bulk bands, and show how these modes can be modified by external magnetic field. Results for attenuated total reflection are presented, and discussed in relation to nonreciprocity. Example results are calculated for the canted antiferromagnet BaMnF4.Comment: 14 pages, 6 figure

Spin-accumulation in small ferromagnetic double barrier junctions

The non-equilibrium spin accumulation in ferromagnetic double barrier junctions is shown to govern the transport in small structures. Transport properties of such systems are described by a generalization of the theory of the Coulomb blockade. The spin accumulation enhances the magnetoresistance. The transient non-linear transport properties are predicted to provide a unique experimental evidence of the spin-accumulation in the form of a reversed current on time scales of the order of the spin-flip relaxation time.Comment: 4 pages, 3 figures, to appear in PR

Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

We study transport through a ferromagnetic single-electron transistor. The resistance is represented as a path integral, so that systems where the tunnel resistances are smaller than the quantum resistance can be investigated. Beyond the low order sequential tunneling and co-tunneling regimes, a large magnetoresistance ratio at sufficiently low temperatures is found. In the opposite limit, when the thermal energy is larger than the charging energy, the magnetoresistance ratio is only slightly enhanced.Comment: updated versio