Measurement of XeI and XeII velocity in the near exit plane of a low-power Hall effect thruster by light induced fluorescence spectroscopy

Near exit plane non-resonant light induced fluorescence spectroscopy is performed in a Hall effect low-power Xenon thruster at discharge voltage of 250V and anode flow rate of 0.7mg/sec. Measurement of the axial and radial velocity components are performed, exciting the 6s[3/2]_2-->6p[3/2]_2 transition at 823.16nm in XeI and the 5d[4]_(7/2)-->6p[3]_(5/2) transition at 834.724nm in XeII. No significant deviation from the thermal velocity is observed for XeI. Two most probable ion velocities are registered at a given position with respect to the thruster axis, which are mainly attributed to different areas of creation of ions inside the acceleration channel. The spatial resolution of the set-up is limited by the laser beam size (radius of the order of 0.5mm) and the fluorescence collection optics, which have a view spot diameter of 8mm.Comment: 6 pages, 8 figure

Omega_{ccc} production via fragmentation at LHC

In the framework of the leading order of perturbative QCD and the nonrelativistic quark-diquark model of baryons we have obtained fragmentation function for c-quark to split into Omega_{ccc} baryon. It is shown that at LHC one can expect 3.5 10^3 events with Omega_{ccc} at p_t>5 GeV/c and -1<y<1 per year.Comment: LaTex, 5 pages and 2 figures. Talk presented at XIV Workshop on High Energy Physics and Quantum Field Theory, Moscow, May 27 - June 4, 199

Intrinsic defects in silicon carbide LED as a perspective room temperature single photon source in near infrared

Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide

Quantum systems can provide outstanding performance in various sensing applications, ranging from bioscience to nanotechnology. Atomic-scale defects in silicon carbide are very attractive in this respect because of the technological advantages of this material and favorable optical and radio frequency spectral ranges to control these defects. We identified several, separately addressable spin-3/2 centers in the same silicon carbide crystal, which are immune to nonaxial strain fluctuations. Some of them are characterized by nearly temperature independent axial crystal fields, making these centers very attractive for vector magnetometry. Contrarily, the zero-field splitting of another center exhibits a giant thermal shift of -1.1 MHz/K at room temperature, which can be used for thermometry applications. We also discuss a synchronized composite clock exploiting spin centers with different thermal response.Comment: 8 pages, 7 figure

Effect of the heliospheric interface on the distribution of interstellar hydrogen atom inside the heliosphere

This paper deals with the modeling of the interstellar hydrogen atoms (H atoms) distribution in the heliosphere. We study influence of the heliospheric interface, that is the region of the interaction between solar wind and local interstellar medium, on the distribution of the hydrogen atoms in vicinity of the Sun. The distribution of H atoms obtained in the frame of the self-consistent kinetic-gasdynamic model of the heliospheric interface is compared with a simplified model which assumes Maxwellian distribution of H atoms at the termination shock and is called often as 'hot' model. This comparison shows that the distribution of H atoms is significantly affected by the heliospheric interface not only at large heliocentric distances, but also in vicinity of the Sun at 1-5 AU. Hence, for analysis of experimental data connected with direct or undirect measurements of the interstellar atoms one necessarily needs to take into account effects of the heliospheric interface. In this paper we propose a new model that is relatively simple but takes into account all major effects of the heliospheric interface. This model can be applied for analysis of backscattered Ly-alpha radiation data obtained on board of different spacecraft.Comment: published in Astronomy Letter

Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600 nm down to 60 nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect, for the first time, room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers, but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical and biological processes.Comment: 5 pages, 4 figure