Marine Tar Residues: a Review

Abstract Marine tar residues originate from natural and anthropogenic oil releases into the ocean environment and are formed after liquid petroleum is transformed by weathering, sedimentation, and other processes. Tar balls, tar mats, and tar patties are common examples of marine tar residues and can range in size from millimeters in diameter (tar balls) to several meters in length and width (tar mats). These residues can remain in the ocean envi-ronment indefinitely, decomposing or becoming buried in the sea floor. However, in many cases, they are transported ashore via currents and waves where they pose a concern to coastal recreation activities, the seafood industry and may have negative effects on wildlife. This review summarizes the current state of knowledge on marine tar residue formation, transport, degradation, and distribution. Methods of detection and removal of marine tar residues and their possible ecological effects are discussed, in addition to topics of marine tar research that warrant further investigation. Emphasis is placed on ben-thic tar residues, with a focus on the remnants of the Deepwater Horizon oil spill in particular, which are still affecting the northern Gulf of Mexico shores years after the leaking submarine well was capped

Electrical Properties of Unintentionally Doped Semi-Insulating and Conducting 6H-SiC

Temperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique without intentional doping. n- and p-type as well semi-insulating samples were studied to explore the compensation mechanism in semi-insulating high purity SiC. Nitrogen and boron were found from TDH and SIMS measurements to be the dominant impurities that must be compensated to produce semi-insulating properties. The electrical activation energy of the semi-insulating sample determined from the dependence of the resistivity was 1.0 eV. LTPL lines near 1.00 and 1.34 eV, identified with the defects designated as UD-1 and UD-3, were observed in all three samples but the intensity of the UD-1 line was almost a factor of 10 more in the n-type sample than in the the p-type sample with that in the semi-insulating sample being intermediate between those two. OAS and TSC experiments confirmed the high purity of this material. The results suggest that the relative concentrations of a dominant deep level and nitrogen and boron impurities can explain the electrical properties in this material

Enthalpy of Formation of Gallium Nitride

International audienc

Electrical Properties of Unintentionally Doped Semi-Insulating and Conducting 6H-SiC

Temperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique without intentional doping. n- and p-type as well semi-insulating samples were studied to explore the compensation mechanism in semi-insulating high purity SiC. Nitrogen and boron were found from TDH and SIMS measurements to be the dominant impurities that must be compensated to produce semi-insulating properties. The electrical activation energy of the semi-insulating sample determined from the dependence of the resistivity was 1.0 eV. LTPL lines near 1.00 and 1.34 eV, identified with the defects designated as UD-1 and UD-3, were observed in all three samples but the intensity of the UD-1 line was almost a factor of 10 more in the n-type sample than in the the p-type sample with that in the semi-insulating sample being intermediate between those two. OAS and TSC experiments confirmed the high purity of this material. The results suggest that the relative concentrations of a dominant deep level and nitrogen and boron impurities can explain the electrical properties in this material