Simulator evaluation of display concepts for pilot monitoring and control of space shuttle approach and landing. Phase 2: Manual flight control

A study of the display requirements for final approach management of the space shuttle orbiter vehicle is presented. An experimental display concept, providing a more direct, pictorial representation of the vehicle's movement relative to the selected approach path and aiming points, was developed and assessed as an aid to manual flight path control. Both head-up, windshield projections and head-down, panel mounted presentations of the experimental display were evaluated in a series of simulated orbiter approach sequence. Data obtained indicate that the experimental display would enable orbiter pilots to exercise greater flexibility in implementing alternative final approach control strategies. Touchdown position and airspeed dispersion criteria were satisfied on 91 percent of the approach sequences, representing various profile and wind effect conditions. Flight path control and airspeed management satisfied operationally-relevant criteria for the two-segment, power-off orbiter approach and were consistently more accurate and less variable when the full set of experimental display elements was available to the pilot. Approach control tended to be more precise when the head-up display was used; however, the data also indicate that the head-down display would provide adequate support for the manual control task

Improved display support for flight management during low visibility approach and landing. A simulator evaluation of an ILS-independent runway perspective display Final report

Low visibility approach and landing simulation for jet transport

A review of modular strategies and architecture within manufacturing operations

This paper reviews existing modularity and modularization literature within manufacturing operations. Its purpose is to examine the tools, techniques, and concepts relating to modular production, to draw together key issues currently dominating the literature, to assess managerial implications associated with the emerging modular paradigm, and to present an agenda for future research directions. The review is based on journal papers included in the ABI/Inform electronic database and other noteworthy research published as part of significant research programmes. The research methodology concerns reviewing existing literature to identify key modular concepts, to determine modular developments, and to present a review of significant contributions to the field. The findings indicate that the modular paradigm is being adopted in a number of manufacturing organizations. As a result a range of conceptual tools, techniques, and frameworks has emerged and the field of modular enquiry is in the process of codifying the modular lexicon and developing appropriate modular strategies commensurate with the needs of manufacturers. Modular strategies and modular architecture were identified as two key issues currently dominating the modular landscape. Based on this review, the present authors suggest that future research areas need to focus on the development and subsequent standardization of interface protocols, cross-brand module use, supply chain power, transparency, and trust. This is the first review of the modular landscape and as such provides insights into, first, the development of modularization and, second, issues relating to designing modular products and modular supply chains

Surface segregation and the Al problem in GaAs quantum wells

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-x}$As/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the Al$_x$Ga$_{1-x}$As barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the Al$_x$Ga$_{1-x}$As barrier beneath the QW is increased, which we attribute to the surface segregation of Oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking

Evidence for a ν=5/2\nu=5/2 Fractional Quantum Hall Nematic State in Parallel Magnetic Fields

We report magneto-transport measurements for the fractional quantum Hall state at filling factor $\nu=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly anisotropic, with the in-plane resistance along the direction of $B_{||}$ becoming more than 30 times larger than in the perpendicular direction. Remarkably, the resistance anisotropy ratio remains constant over a relatively large temperature range, yielding an energy gap which is the same for both directions. Our data are qualitatively consistent with a fractional quantum Hall \textit{nematic} phase

Reorientation of the stripe Phase of 2D Electrons by a Minute Density Modulation

Interacting two-dimensional electrons confined in a GaAs quantum well exhibit isotropic transport when the Fermi level resides in the first excited ($N=1$) Landau level. Adding an in-plane magnetic field ($B_{||}$) typically leads to an anisotropic, stripe-like (nematic) phase of electrons with the stripes oriented perpendicular to the $B_{||}$ direction. Our experimental data reveal how a periodic density modulation, induced by a surface strain grating from strips of negative electron-beam resist, competes against the $B_{||}$-induced orientational order of the stripe phase. Even a minute ($<0.25\%$) density modulation is sufficient to reorient the stripes along the direction of the surface grating.Comment: Accepted for publication in Phys. Rev. Let

Phase Diagrams for the ν\nu = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells

We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The quasi-two-dimensional electron systems we study are confined to GaAs quantum wells with widths $W$ ranging from 41 to 96 nm and have variable densities in the range of $\simeq 4 \times 10^{11}$ to $\simeq 4 \times 10^{10}$ cm$^{-2}$. We present several experimental phase diagrams for the stability of the $\nu=1/2$ FQHE in these quantum wells. In general, for a given $W$, the 1/2 FQHE is stable in a limited range of intermediate densities where it has a bilayer-like charge distribution; it makes a transition to a compressible phase at low densities and to an insulating phase at high densities. The densities at which the $\nu=1/2$ FQHE is stable are larger for narrower quantum wells. Moreover, even a slight charge distribution asymmetry destabilizes the $\nu=1/2$ FQHE and turns the electron system into a compressible state. We also present a plot of the symmetric-to-antisymmetric subband separation ($\Delta_{SAS}$), which characterizes the inter-layer tunneling, vs density for various $W$. This plot reveals that $\Delta_{SAS}$ at the boundary between the compressible and FQHE phases increases \textit{linearly} with density for all the samples. Finally, we summarize the experimental data in a diagram that takes into account the relative strengths of the inter-layer and intra-layer Coulomb interactions and $\Delta_{SAS}$. We conclude that, consistent with the conclusions of some of the previous studies, the $\nu=1/2$ FQHE observed in wide GaAs quantum wells with symmetric charge distribution is stabilized by a delicate balance between the inter-layer and intra-layer interactions, and is very likely described by a two-component ($\Psi_{311}$) state.Comment: Accepted for publication in Phys. Rev.

Anisotropic Fermi Contour of (001) GaAs Holes in Parallel Magnetic Fields

We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands.Comment: 4 pages, 4 figure