Degradation of multiplier phototubes exposed to spatial radiations

Degradation of multiplier phototubes exposed to spatial radiation

Dilaton Stabilization and Inflation in the D-brane World

We study the dilaton stabilization in the D-brane world in which a D-brane constitutes our universe. The dilaton can be stabilized due to the interplay between the D-brane tension and the negative scalar curvature of extra dimensions. Cosmic evolution of the dilaton is investigated with the obtained dilaton potential and it is found that inflation can be realized before the settlement of the dilaton.Comment: 10 pages, abstract correcte

Cauchy problem for the Boltzmann-BGK model near a global Maxwellian

In this paper, we are interested in the Cauchy problem for the Boltzmann-BGK model for a general class of collision frequencies. We prove that the Boltzmann-BGK model linearized around a global Maxwellian admits a unique global smooth solution if the initial perturbation is sufficiently small in a high order energy norm. We also establish an asymptotic decay estimate and uniform $L^2$-stability for nonlinear perturbations.Comment: 26 page

Neutron and muon-induced background studies for the AMoRE double-beta decay experiment

AMoRE (Advanced Mo-based Rare process Experiment) is an experiment to search a neutrinoless double-beta decay of $^{100}$Mo in molybdate crystals. The neutron and muon-induced backgrounds are crucial to obtain the zero-background level (<$10^{-5}$ counts/(keV$\cdot$kg$\cdot$yr)) for the AMoRE-II experiment, which is the second phase of the AMoRE project, planned to run at YEMI underground laboratory. To evaluate the effects of neutron and muon-induced backgrounds, we performed Geant4 Monte Carlo simulations and studied a shielding strategy for the AMORE-II experiment. Neutron-induced backgrounds were also included in the study. In this paper, we estimated the background level in the presence of possible shielding structures, which meet the background requirement for the AMoRE-II experiment

Taste symmetry breaking with HYP-smeared staggered fermions

We study the impact of hypercubic (HYP) smearing on the size of taste breaking for staggered fermions, comparing to unimproved and to asqtad-improved staggered fermions. As in previous studies, we find a substantial reduction in taste-breaking compared to unimproved staggered fermions (by a factor of 4-7 on lattices with spacing $a\approx 0.1$fm). In addition, we observe that discretization effects of next-to-leading order in the chiral expansion (${\cal O}(a^2 p^2)$) are markedly reduced by HYP smearing. Compared to asqtad valence fermions, we find that taste-breaking in the pion spectrum is reduced by a factor of 2.5-3, down to a level comparable to the expected size of generic ${\cal O}(a^2)$ effects. Our results suggest that, once one reaches a lattice spacing of $a\approx 0.09$fm, taste-breaking will be small enough after HYP smearing that one can use a modified power counting in which ${\cal O}(a^2) \ll {\cal O}(p^2)$, simplify fitting to phenomenologically interesting quantities.Comment: 14 pages, 13 figures, references updated, minor change

Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries.

Grain boundaries in polycrystalline pentacene films significantly affect the electrical characteristics of pentacene field-effect transistors (FETs). Upon reversal of the gate voltage sweep direction, pentacene FETs exhibited hysteretic behaviours in the subthreshold region, which was more pronounced for the FET having smaller pentacene grains. No shift in the flat-band voltage of the metal-insulator-semiconductor capacitor elucidates that the observed hysteresis was mainly caused by the influence of localized trap states existing at pentacene grain boundaries. From the results of continuous on/off switching operation of the pentacene FETs, hole depletion during the off period is found to be limited by pentacene grain boundaries. It is suggested that the polycrystalline nature of a pentacene film plays an important role on the dynamic characteristics of pentacene FETs